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| MMDFS3P303 Power MOSFET 3 Amps, 30 Volts P-Channel SO-8, FETKYt The FETKY product family incorporates low RDS(on), MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter, Buck-Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products. * Power MOSFET with Low VF, Low IR Schottky Rectifier * Lower Component Placement and Inventory Costs along with Board Space Savings * R2 Suffix for Tape and Reel (2500 units/13 reel) * Mounting Information for SO-8 Package Provided * IDSS Specified at Elevated Temperature * Applications Information Provided * Marking: 3P303 MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted) (Notes 1. & 2.) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 MW) Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25C - Continuous @ TA = 100C - Single Pulse (tp v 10 ms) Total Power Dissipation @ TA = 25C (Note 3.) Symbol VDSS VDGR VGS ID ID IDM PD Value 30 30 "20 3.5 2.25 12 2.0 Unit Vdc Vdc Vdc Adc Apk Watts 1 L Y WW = Location Code = Year = Work Week 8 SO-8 CASE 751 STYLE 18 6N303 LYWW http://onsemi.com 3 AMPERES 30 VOLTS RDS(on) = 100 mW VF = 0.42 Volts P-Channel D G S MARKING DIAGRAM PIN ASSIGNMENT Anode Anode Source Gate 1 2 3 4 8 7 6 5 Cathode Cathode Drain Drain Single Pulse Drain-to-Source Avalanche EAS 375 mJ Energy - STARTING TJ = 25C VDD = 30 Vdc, VGS = 10 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W 1. Negative sign for P-channel device omitted for clarity. 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. 3. Mounted on 2 square FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided), 10 sec. max. Top View ORDERING INFORMATION Device MMDFS3P303R2 Package SO-8 Shipping 2500 Tape & Reel (c) Semiconductor Components Industries, LLC, 2000 1 November, 2000 - Rev. 2 Publication Order Number: MMDFS3P303/D MMDFS3P303 SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage Average Forward Current (Note 3.) (Rated VR) TA = 100C Peak Repetitive Forward Current (Note 3.) (Rated VR, Square Wave, 20 kHz) TA = 105C Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) VRRM VR IO Ifrm Ifsm 30 3.0 6.0 30 Volts Amps Amps Amps THERMAL CHARACTERISTICS - SCHOTTKY AND MOSFET Thermal Resistance - Junction-to-Ambient (Note 4.) - MOSFET Thermal Resistance - Junction-to-Ambient (Note 5.) - MOSFET Thermal Resistance - Junction-to-Ambient (Note 3.) - MOSFET Thermal Resistance - Junction-to-Ambient (Note 4.) - Schottky Thermal Resistance - Junction-to-Ambient (Note 5.) - Schottky Thermal Resistance - Junction-to-Ambient (Note 3.) - Schottky RqJA RqJA RqJA RqJA RqJA RqJA 201 105 62.5 197 97 62.5 -55 to 150 C C/W Operating and Storage Temperature Range Tj, Tstg 3. Mounted on 2 square FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided), 10 sec. max. 4. Mounted with minimum recommended pad size, PC Board FR4. 5. Mounted on 2 square FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided), Steady State. MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (Notes 1. & 6.) Characteristics OFF CHARACTERISTICS Drain-Source Voltage Zero Gate Drain Current Gate Body Leakage Current (VGS = 0 Vdc, ID = 0.25 mA) Temperature Coefficient (Positive) (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125C) (VGS = 20 Vdc, VDS = 0) (VDS = VGS, ID = 0.25 mA) Temperature Coefficient (Negative) V(BR)DSS IDSS IGSS VGS(th) RDS(on) gFS Ciss (VDS = 25 Vd VGS = 0 Vdc, Vdc, Vd f = 1.0 MHz) Coss Crss td(on) (VDD = 20 Vdc, ID = 2.0 Adc, VGS = 10 Vdc, Vdc RG = 6.0 ) tr td(off) tf 30 - - - - - 27 - - - - - 1.0 10 100 Vdc mV/C Adc nAdc Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 6.) Gate Threshold Voltage 1.0 - - - - 1.7 3.5 0.085 0.130 5.0 - - 0.100 0.160 - Vdc mV/C W mhos Static Drain-Source Resistance (VGS = 10 Vdc, ID = 3.5 Adc) (VGS = 4.5 Vdc, ID = 2.0 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 7.) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time - - - 405 200 55 - - - pF - - - - 12.5 16 50 35 25 30 90 65 ns 1. Negative signs for P-Channel device omitted for clarity. 6. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 7. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 MMDFS3P303 MOSFET ELECTRICAL CHARACTERISTICS - continued (TJ = 25C unless otherwise noted) (Notes 1. & 6.) Characteristics SWITCHING CHARACTERISTICS - continued (Note 7.) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 20 Vdc, ID = 3.5 Adc, VGS = 10 Vdc) (VDD = 20 Vdc, ID = 2.0 Adc, VGS = 4.5 Vdc, 4 5 Vdc RG = 6.0 ) td(on) tr td(off) tf QT Q1 Q2 Q3 DRAIN SOURCE DIODE CHARACTERISTICS Forward On-Voltage (Note 6.) Reverse Recovery Time (VGS = 0 V, IS = 3 5 A V 3.5 A, dIS/dt = 100 A/s) Reverse Recovery Stored Charge (IS = 1.7 Adc, VGS = 0 Vdc) VSD trr ta tb QRR - - - - - 0.9 26.6 18.8 7.8 0.03 1.2 - - - - C V ns - - - - - - - - 19 36 27 31 14 1.8 4.5 2.85 - - - - 25 - - - nC ns Symbol Min Typ Max Unit SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) g( ) Maximum Instantaneous Forward Voltage (Note 6.) IF = 100 mAdc Ad IF = 3.0 Adc IF = 6.0 Adc Maximum Instantaneous Reverse Current (Note 6.) ( ) VR = 30 V VF TJ = 25C 0.28 0.42 0.50 IR TJ = 25C 250 - VR = 30 V 1. Negative signs for P-Channel device omitted for clarity. 6. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 7. Switching characteristics are independent of operating junction temperature. Maximum Voltage Rate of Change dV/dt 10,000 TJ = 125C 0.13 0.33 0.45 TJ = 125C - 25 mA V/ms mA Volts http://onsemi.com 3 MMDFS3P303 TYPICAL FET ELECTRICAL CHARACTERISTICS 6.0 5.0 4.0 3.5 V 3.0 2.0 3.0 V 1.0 0 VGS = 2.7 V 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 3.3 V 6.0 4.0 V TJ = 25C ID, DRAIN CURRENT (AMPS) 3.7 V 5.0 4.0 3.0 2.0 1.0 0 25C 100C 1.5 2.0 2.5 VDS 10 V 10 V 6.0 V 5.0 V 4.5 V ID, DRAIN CURRENT (AMPS) TJ = -55C 3.0 3.5 4.0 4.5 5.0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2.0 4.0 6.0 8.0 10 TJ = 25C ID = 3.5 A R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 1.0 1.5 Figure 2. Transfer Characteristics TJ = 25C VGS = 4.5 V 10 V 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-To-Source Voltage R DS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 1.0 0 VGS = 10 V ID = 1.5 A IDSS , LEAKAGE (nA) 100 1000 Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V TJ = 125C 10 100C 5.0 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-To-Source Leakage Current versus Voltage http://onsemi.com 4 MMDFS3P303 TYPICAL FET ELECTRICAL CHARACTERISTICS 1200 1000 C, CAPACITANCE (pF) 800 600 400 200 0 -10 Crss Ciss Coss Crss -5.0 VGS 0 VDS 5.0 10 15 20 25 30 Ciss 12 10 25 20 VGS Q1 Q2 ID = 3.5 A Q3 VDS 0 2.0 4.0 6.0 8.0 10 12 QG, TOTAL GATE CHARGE (nC) TJ = 25C 10 5.0 0 14 15 QT TJ = 25C 8.0 6.0 4.0 2.0 0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge 2.5 IS, SOURCE CURRENT (AMPS) 2.0 1.5 1.0 0.5 0 VGS = 0 V TJ = 25C Figure 7. Capacitance Variation 1000 VGS = 10 V TJ = 25C ID = 2.0 A VDD = 15 V td(off) tf 10 tr td(on) 100 t, TIME (ns) 1.0 1.0 10 RG, GATE RESISTANCE (OHMS) 100 0 0.2 0.4 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 EAS , SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) VGS = 12 V SINGLE PULSE TA = 25C 10 ms 1.0 dc 450 1.0 ms 400 350 300 250 200 150 100 50 0 25 Figure 10. Diode Forward Voltage versus Current ID = 3.5 A ID, DRAIN CURRENT (AMPS) 10 0.1 0.01 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1.0 10 100 50 75 100 125 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 5 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1.0 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS = 0 VGS = 0 MMDFS3P303 TYPICAL FET ELECTRICAL CHARACTERISTICS 1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1E-03 1E-02 1E-01 1E+00 t, TIME (s) 1E+01 1E+02 CHIP JUNCTION NORMALIZED TO RqJA AT STEADY STATE (1 PAD) 2.32 W 0.0014 F 18.5 W 0.0073 F 50.9 W 0.022 F 37.1 W 0.105 F 56.8 W 0.484 F 24.4 W 3.68 F AMBIENT 1E+03 Figure 13. FET Thermal Response di/dt IS trr ta tp IS tb TIME 0.25 IS Figure 14. Diode Reverse Recovery Waveform TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 10 85C 25C 10 85C IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1.0 TJ = 125C -40C IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1.0 TJ = 125C 25C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 15. Typical Forward Voltage Figure 16. Maximum Forward Voltage http://onsemi.com 6 MMDFS3P303 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 0.1 IR, REVERSE CURRENT (AMPS) 0.01 0.001 TJ = 125C 85C 0.1 TJ = 125C 0.01 0.001 0.0001 25C 0.0001 25C 0.00001 0.000001 0 5.0 10 15 20 25 30 IR, MAXIMUM REVERSE CURRENT (AMPS) 0.00001 0.000001 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 17. Typical Reverse Current 1000 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Figure 18. Maximum Reverse Current IO , AVERAGE FORWARD CURRENT (AMPS) dc SQUARE WAVE Ipk/Io = p Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = 20 FREQ = 20 kHz C, CAPACITANCE (pF) 100 10 0 5.0 10 15 20 25 30 0 20 40 60 80 100 120 140 160 VR, REVERSE VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (C) Figure 19. Typical Capacitance 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 0 1.0 2.0 3.0 4.0 Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = 20 Ipk/Io = p SQUARE WAVE Figure 20. Current Derating PFO , AVERAGE POWER DISSIPATION (WATTS) dc 5.0 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 21. Forward Power Dissipation http://onsemi.com 7 MMDFS3P303 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 NORMALIZED TO RqJA AT STEADY STATE (1 PAD) 0.1010 W CHIP JUNCTION 39.422 mF SINGLE PULSE 1.2674 W 27.987 W 30.936 W 36.930 W 0.2292 F 2.267 F AMBIENT 1.0E-02 1.0E-01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 1.0E+03 0.01 493.26 mF 0.0131 F 0.001 1.0E-05 1.0E-04 1.0E-03 Figure 22. Schottky Thermal Response TYPICAL APPLICATIONS STEP DOWN SWITCHING REGULATORS LO + Vin CO + Vout LOAD Buck Regulator LO + Vin CO + Vout LOAD Synchronous Buck Regulator http://onsemi.com 8 MMDFS3P303 TYPICAL APPLICATIONS STEP UP SWITCHING REGULATORS L1 + Vin Q1 CO + Vout LOAD Boost Regulator + Vin CO + Vout LOAD Buck-Boost Regulator MULTIPLE BATTERY CHARGERS Buck Regulator/Charger Q1 + Vin D1 CO LO Q2 D2 BATT #1 Q3 D3 BATT #2 http://onsemi.com 9 MMDFS3P303 TYPICAL APPLICATIONS Li-lon BATTERY PACK APPLICATIONS Battery Pack PACK + Li-Ion BATTERY CELLS SMART IC DISCHARGE CHARGE Q1 Q2 PACK - SCHOTTKY SCHOTTKY * * * * Applicable in battery packs which require a high current level. During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge. During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation. Under normal operation, both transistors are on. SO-8 FOOTPRINT 0.060 1.52 0.275 7.0 0.155 4.0 0.024 0.6 0.050 1.270 inches mm http://onsemi.com 10 MMDFS3P303 PACKAGE DIMENSIONS SO-8 CASE 751-07 ISSUE V -X- A 8 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D G H J K M N S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 ANODE ANODE SOURCE GATE DRAIN DRAIN CATHODE CATHODE INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 B 1 4 S 0.25 (0.010) M Y M -Y- G C -Z- H D 0.25 (0.010) M SEATING PLANE K N X 45 _ 0.10 (0.004) M J ZY S X S XXXXXX ALYW STYLE 18: PIN 1. 2. 3. 4. 5. 6. 7. 8. http://onsemi.com 11 MMDFS3P303 FETKY is a trademark of International Rectifier Corporation. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 MMDFS3P303/D |
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