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| 2SK3363-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 30 50 200 16 1735 80 +150 Unit V A A V mJ W C C -55 to +150 *1 L=0.925mH, Vcc=12V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V VGS=0V VGS=16V VDS=0V ID=50A VGS=4V ID=50A VGS=10V ID=50A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V ID=100A VGS=10V RGS=10 L=100H Tch=25C IF=50A VGS=0V Tch=25C IF=50A VGS=0V -di/dt=100A/s Tch=25C 50 1.0 65 0.12 1.5 Min. 30 1.0 Tch=25C Tch=125C Typ. 1.5 10 0.2 10 8.0 5.3 70 3900 2000 850 17 70 250 180 Max. 2.0 500 1.0 100 10. 5 6.8 5850 3000 1280 30 110 380 270 Units V V A mA nA m S pF 35 ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.56 75.0 Units C/W C/W 1 2SK3363-01 Characteristics Power Dissipation PD=f(Tc) 100 10 3 FUJI POWER MOSFET Safe operating area ID=f(VDS):D=0.01,Tc=25C 80 10 2 t= 1s 10s 100s D.C. 60 1ms PD [W] ID [A] 10 1 10ms 100ms 0 40 10 20 t D= T t T 0 0 25 50 75 100 125 150 10 -1 10 -1 10 0 10 1 10 2 10 3 Tc [C] VDS [V] Typical output characteristics ID=f(VDS):80s pulse test,Tc=25C 200 Typical transfer characteristics ID=f(VGS):80s pulse test,VDS=25V,Tch=25C VGS=15V 10V 8V 5V 150 4.5V 4.0V 100 ID [A] 3.0V 2.5V 2.0V 2 3 4 5 ID [A] 10 100 3.5V 50 1 0 0 1 0.1 0 1 2 3 4 5 6 VDS [V] VGS [V] Typical forward transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25C 10 3 Typical Drain-Source on-State Resistance RDS(on)=f(ID):80s pulse test,Tch=25C 40 VGS= 2.0V 2.5V 3.0V 30 2 10 RDS(on) [m] gfs [s] 20 3.5V 10 1 4.0V 10 4.5V 5V 8V 10V 15V 10 0 0 10 0 10 1 10 2 10 3 0 50 100 150 200 ID [A] ID [A] 2 2SK3363-01 Drain-source on-state resistance RDS(on)=f(Tch):ID=50A,VGS=10V 20 3.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 2.5 15 2.0 VGS(th) [V] max. RDS(on)[m] 10 max. 1.5 typ. 1.0 typ. 5 0.5 min. 0 -50 0 50 100 150 0.0 -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical capacitances C=f(VDS):VGS=0V,f=1MHz 100n 25 Typical Gate Charge Characteristics VGS=f(Qg):ID=100A,Tch=25C 25 VDS VGS 20 20 10n 15 Ciss Coss 1n Crss 5 Vcc=24V VDS [V] 15V 15 VGS [V] C [F] 10 10 5 100p -2 10 10 -1 10 0 10 1 10 2 0 0 50 100 150 200 250 0 300 VDS [V] Qg [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s pulse test,Tch=25C 220 200 180 160 140 120 10 4 Typical Switching Characteristics vs. ID t=f(ID):Vcc=15V,VGS=10V,RG=10 10 3 td(off) IF [A] 100 80 60 40 20 10V 5V VGS=0V t [ns] tf 10 2 tr td(on) 10 -1 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 0 10 1 10 2 VSD [V] ID [A] t-ID 3 2SK3363-01 Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch) 60 10 1 FUJI POWER MOSFET Transient thermal impedance Zthch=f(t) parameter:D=t/T 50 0 10 D=0.5 Zthch-c [K/W] 40 0.2 0.1 10 -1 I(AV) [A] 0.05 0.02 0.01 t D= T t T 30 20 10 -5 10 10 -2 0 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t [s] 0 0 50 100 150 Starting Tch [C] Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=12V, I(AV)<=50A 2000 1750 1500 1250 Eas [mJ] 1000 750 500 250 0 0 50 100 150 Starting Tch [C] 4 |
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