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| 2SK3340-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS IAR *2 EAV *1 PD Tch Tstg Rating 400 23 92 30 23 545 295 +150 -55 to +150 Unit V A A V A mJ W C < *2 Tch=150C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=1.89mH, Vcc=40V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total gate charge Gate-Source charge Gete-Drain charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=400V VGS=0V VGS=30V VDS=0V ID=11.5A VGS=10V ID=11.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=23A VGS=10V RGS=10 Vcc=200V ID=23A VGS=10V L=1.89mH Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Min. 400 2.5 Tch=25C Tch=125C Typ. Max. Units V V A mA nA S pF 3.0 3.5 10 500 0.2 1.0 10 100 0.16 0.2 8.5 17 2650 3975 500 750 230 345 22 35 105 160 225 340 120 180 137 210 36 55 48 75 23 1.15 1.73 450 8.6 ns nC A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.424 50.0 Units C/W C/W 1 2SK3340-01 Characteristics Allowable Power Dissipation PD=f(Tc) 400 FUJI POWER MOSFET Safe operating area ID=f(VDS):Single Pulse,Tc=25C 350 10 300 2 t= 1s 10s 250 D.C. PD [W] 200 ID [A] 10 1 100s 1ms 150 10ms 100 10 0 t D= t T 100ms 50 T -1 0 0 25 50 75 100 125 150 10 10 0 10 1 10 2 10 3 Tc [C] VDS [V] Typical Output Characteristics ID=f(VDS):80s pulse test,Tch=25C 60 15V 10V 6.5V 40 6.0V 10 100 Typical Transfer Characteristic ID=f(VGS):80s pulse test,VDS=25V,Tch=25C 20V 50 ID [A] 30 5.5V ID[A] 1 5.0V VGS=4.5V 0.1 0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 7 8 20 10 0 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25C 100 0.5 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s pulse test,Tch=25C VGS=4.5V 0.4 5.0V 5.5V 10 RDS(on) [ ] 0.3 6.0V 6.5V 0.2 10V 15V 20V gfs [S] 1 0.1 0.1 0.1 1 10 100 0.0 0 10 20 30 40 50 60 ID [A] ID [A] 2 2SK3340-01 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V 0.8 5.0 4.5 0.7 4.0 0.6 3.5 0.5 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA max. VGS(th) [V] 3.0 2.5 2.0 typ. RDS(on) [ ] 0.4 0.3 min. max. typ. 1.5 0.2 1.0 0.1 0.5 0.0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=23A,Tch=25C 25 10 -7 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 20 10 -8 Vcc= 80V 15 200V Ciss VGS [V] C [F] 320V 10 -9 Coss Crss 10 -10 10 5 0 0 50 100 150 200 250 300 10 -11 10 -2 10 -1 10 0 10 1 10 2 Qg [C] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s pulse test,Tch=25C 100 10 4 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 10 10 3 td(off) IF [A] t [ns] tf 1 10 2 tr td(on) 0.1 0.00 10 0.25 0.50 0.75 1.00 1.25 1.50 1 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3340-01 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=40V,I(AV)<=23A 600 FUJI POWER MOSFET Transient Thermal impedance Zth(ch-c)=f(t) parameter:D=t/T 10 0 0.5 500 10 -1 0.2 0.1 0.05 0.02 400 EAV [mJ] Zth(ch-c) [K/W] 300 10 -2 0.01 0 t D= t T 200 T 10 -5 10 100 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t [s] 0 0 25 50 75 100 125 150 starting Tch [C] 4 |
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