![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
SS9014 SS9014 Pre-Amplifier, Low Level & Low Noise * High total power dissipation. (PT=450mW) * High hFE and good linearity * Complementary to SS9015 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 50 45 5 100 450 150 -55 ~ 150 Units V V V mA mW C C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) VBE (on) Cob fT NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure Test Condition IC =100A, IE =0 IC =1mA, IB =0 IE =100A, IC =0 VCB =50V, IE =0 VEB =5V, IC =0 VCE =5V, IC =1mA IC =100mA, IB =5mA IC =100mA, IB =5mA VCE =5V, IC =2mA VCB =10V, IE =0 f=1MHz VCE =5V, IC =10mA VCE =5V, IC =0.2mA f=1KHz, RS=2K 150 0.58 60 280 0.14 0.84 0.63 2.2 270 0.9 10 Min. 50 45 5 50 50 1000 0.3 1.0 0.7 3.5 V V pF MHz dB Typ. Max. Units V V V nA nA hFE Classification Classification hFE A 60 ~ 150 B 100 ~ 300 C 200 ~ 600 D 400 ~ 1000 (c)2002 Fairchild Semiconductor Corporation Rev. A3, May 2002 SS9014 Typical Characteristics 100 90 1000 VCE = 5V IC [mA], COLLECTOR CURRENT 80 70 60 50 40 30 20 10 0 0 IB = 100A IB = 80A IB = 60A IB = 40A IB = 20A hFE, DC CURRENT GAIN IB = 160A IB = 140A IB = 120A 100 10 10 20 30 40 50 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), V CE(sat)[mV], SATURATION VOLTAGE 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 VBE (sat) VCE = 5V 100 100 VCE (sat) IC = 20 IB 10 1 10 100 1000 10 1 10 100 1000 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Current Gain Bandwidth Product (c)2002 Fairchild Semiconductor Corporation Rev. A3, May 2002 SS9014 Package Demensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A3, May 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM SPMTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. H5 |
Price & Availability of SS9014
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |