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| LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 applications * IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 % * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * POUT = 30 W with 11 dB gain @ 2000 MHz * ESD PROTECTION ORDER CODE LET20030C M243 epoxy sealed BRANDING LET20030C DESCRIPTION The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C is designed for high gain and broadband performance operating in common source mode at 26 V. It is ideal for base station applications requiring high linearity. PIN CONNECTION 1 3 2 1. Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Symbol V(BR)DSS VDGR VGS ID PDISS Tj TSTG Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M) Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 65 -0.5 to +15 4 65 200 -65 to +200 Unit V V V A W C C THERMAL DATA (TCASE = 70 C) Rth(j-c) Junction -Case Thermal Resistance 2.0 C/W 1/5 January, 24 2003 LET20030C ELECTRICAL SPECIFICATION (TCASE = 25 C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 1 A ID = 1 A VDS = 26 V VDS = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 TBD TBD TBD TBD TBD Min. 65 1 1 5.0 Typ. Max. Unit V A A V V mho pF pF pF Symbol Test Conditions Min. Typ. Max. Unit DYNAMIC (f = 2000 MHz) P1dB GP D IMD3(1) Load mismatch VDD = 26 V VDD = 26 V VDD = 26 V VDD = 26 V IDQ = 200 mA IDQ = 200 mA POUT = 30 W IDQ = 200 mA POUT = 30 W IDQ = 200 mA POUT = 30 W PEP POUT = 30 W 10:1 30 11 52 -31 -28 W dB % dBc VSWR IDQ = 200 mA VDD = 26 V ALL PHASE ANGLES DYNAMIC (f = 1930 - 1990 MHz) POUT (2) GP D (2) VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD POUT = 30 W 25 11 40 30 W dB 45 4.5 % W Pout(CDMA)(3) 885 KHz < -47 dBc 1.25 MHz < -55 dBc 2.25 MHz < -55 dBc 885 KHz < -47 dBc 1.25 MHz < -55 dBc 2.25 MHz < -55 dBc D(CDMA)(3) 17 % (1) f1 = 2000 MHz, f2 = 2000.1 MHz (2) 1 dB Compression point (3) IS-97 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13 ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 M3 2/5 LET20030C TYPICAL PERFORMANCE Power Gain vs. Output Power 16 14 50 Efficiency vs. Output Power 60 12 40 10 Gp (dB) 8 6 20 Nd (%) 30 4 2 0 0 10 20 Pout (W ) 30 40 f = 2 GHz Vcc = 26 V Idq = 200 m A 10 f = 2 GHz Vcc = 26 V Idq = 200 m A 0 10 20 Pout (W ) 30 40 0 IMD3 vs. Output Power 0 -10 -20 IMD3 (dBc) -30 -40 -50 -60 Vc c = 26 V Idq = 200 m A 0 5 10 15 20 25 30 35 40 -70 Pout (W PEP) 3/5 LET20030C M243 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA mm Inch MAX 5.72 6.48 6.10 14.27 20.07 8.89 0.10 3.18 1.83 1.27 20.57 9.40 0.15 4.45 2.24 1.78 0.790 0.350 0.004 0.125 0.072 0.050 MIN. 0.205 0.215 0.220 0.562 0.810 0.370 0.006 0.175 0.088 0.070 TYP. MAX 0.225 0.255 0.240 DIM. A B C D E F G H I J MIN. 5.21 5.46 5.59 TYP. Controlling dimension: Inches 1022142E 4/5 LET20030C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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