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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200204 Issued Date : 2000.08.01 Revised Date : 2002.01.18 Page No. : 1/3 HTIP117 PNP EPITAXIAL PLANAR TRANSISTOR Description The HTIP117 is designed for use in general purpose amplifier and lowspeed switching applications. Absolute Maximum Ratings (Ta=25C) TO-220 * Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 C Junction Temperature ................................................................................................ +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25C)................................................................................................. 50 W Total Power Dissipation (Ta=25C)................................................................................................... 2 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage ............................................................................................... -100 V BVCEO Collector to Emitter Voltage ............................................................................................ -100 V BVEBO Emitter to Base Voltage ...................................................................................................... -5 V IC Collector Current (Continue)........................................................................................................ -4 A IC Collector Current (Peak).............................................................................................................. -6 A Characteristics (Ta=25C) Symbol BVCBO BVCEO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. -100 -100 1 500 Typ. Max. -1 -2 -2 -2.5 -2.8 200 Unit V V mA mA mA V V K pF Test Conditions IC=-1mA IC=-30mA VCB=-100V VCE=-50V VEB=-5V IC=-2A, IB=-8mA IC=-2A, VCE=-4V IC=-1A, VCE=-4V IC=-2A, VCE=-4V VCB=-10V, f=0.1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% Darlington Schematic C B R1 R2 E HTIP117 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100000 75 C 10000 o Spec. No. : HE200204 Issued Date : 2000.08.01 Revised Date : 2002.01.18 Page No. : 2/3 Saturation Voltage & Collcetor Current 10000 Saturation Voltage (mV) 1000 hFE 125 C 100 o 75 C 1000 o 25 C o 25 C o 125 C o 10 hFE @ VCE=4V 1 1 10 100 1000 10000 100 100 VCE(sat) @ IC=250IB 1000 10000 Collector Current IC (mA) Collector Current IC (mA) ON Voltage & Collector Current 10000 10 Switching Time & Collector Current VCC=30V, IC=250IB1= -250IB2 25 C 1000 125 C o o 75 C o Switching Time (us) ON Voltage (mV) Tstg 1 Tf Ton VBE(ON) @ VCE=4V 100 1 10 100 1000 10000 0.1 1 10 Collector Current IC (mA) Collector Current-IC (A) Capacitance & Revierse-Biased Voltage 1000 Safe Operating Area 100000 PT=1ms 10000 Collector Current-IC (mA) PT=100ms 1000 Capacitance (pF) PT=1s 100 100 Cob 10 10 0.1 1 10 100 1 1 10 100 Reverse-Biased Voltage (V) Forward Voltage-VCE (V) HTIP117 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension Marking: A D B E C Date Code Spec. No. : HE200204 Issued Date : 2000.08.01 Revised Date : 2002.01.18 Page No. : 3/3 H TIP 117 Control Code H I G 4 P M 3 2 1 N K Style: Pin 1.Base 2.Collector 3.Emitter O 3-Lead TO-220AB Plastic Package HSMC Package Code: E *: Typical DIM A B C D E G H Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HTIP117 HSMC Product Specification |
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