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DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1911 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The PA1911 is a switching device which can be driven directly by a 2.5-V power source. The PA1911 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit : mm) 0.32 +0.1 -0.05 0.65-0.15 +0.1 0.16+0.1 -0.06 2.8 0.2 6 5 4 1.5 0 to 0.1 1 2 3 FEATURES * Can be driven by a 2.5-V power source * Low on-state resistance RDS(on)1 = 115 m MAX. (VGS = -4.5 V, ID = -1.5 A) RDS(on)2 = 120 m MAX. (VGS = -4.0 V, ID = -1.5 A) RDS(on)3 = 190 m MAX. (VGS = -2.5 V, ID = -1.0A) 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 0.2 ORDERING INFORMATION PART NUMBER PACKAGE 6-pin Mini Mold (Thin Type) 1, 2, 5, 6 : Drain 3 : Gate 4 : Source PA1911TE EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 Note2 -20 -12/+6 V V A A W W C C Gate Gate Protection Diode Marking: TC Body Diode # 2.5 # 10 0.2 2 150 -55 to +150 Source Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on FR-4 board, t 5 sec. Remark PT2 Tch Tstg The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13455EJ1V0DS00 (1st edition) Date Published September 1999 NS CP(K) Printed in Japan (c) 1998, 1999 PA1911 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = -20 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -1.5 A VGS = -4.5 V, ID = -1.5 A VGS = -4.0 V, ID = -1.5 A VGS = -2.5 V, ID = -1.0 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -10 V ID = -1.5 A VGS(on) = -4.0 V RG = 10 VDD= -10 V ID = -2.5 A VGS = -4.0 V IF = 2.5 A, VGS = 0 V IF = 2.5 A, VGS = 0 V di/dt = 10 A / s -0.5 1 -0.92 4.5 80 86 130 540 190 90 140 500 420 850 5.0 1.5 2.0 0.82 30 2.0 115 120 190 MIN. TYP. MAX. -10 10 -1.5 UNIT A A V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL PG. RG RG = 10 VDD ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS IG = 2 mA VGS(on) 90 % VGS Wave Form RL VDD 0 10 % PG. 50 VGS 0 = 1 s Duty Cycle 1 % ID Wave Form 2 Data Sheet D13455EJ1V0DS00 PA1911 TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 FORWARD BIAS SAFE OPERATING AREA -100 dT - Derating Factor - % ID - Drain Current - A -10 ID (pulse) d ite V) Lim .5 n) -4 S(o = RDVGS ID (DC) (@ PW 10 =1 ms 60 -1 40 10 0m s 5s ms 20 -0.1 0 30 60 90 120 TA - Ambient Temperature - C 150 -0.01 -0.1 Single Pulse 2 Mounted on 250mm x 35 m Copper Pad Connected to Drain Electrode in 50mm x 50mm x 1.6mm FR-4 Board -1 -10 -100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -5 -4 -3 -2 -1 VGS = -3.5 V -3.0 V -2.5 V -2.0 V -1.5 V TRANSFER CHARACTERISTICS -10 -1 ID - Drain Current - A VDS = -10 V ID - Drain Current - A -0.1 -0.01 -0.001 TA = 125C 75C 25C -25C -0.0001 -0.00001 0 0 0 -0.5 -1 -1.5 -2 -2.5 -3 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 VDS - Drain to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = -10 V ID = -1 mA 100 | yfs | - Forward Transfer Admittance - S VGS - Gate to Sorce Voltage - V FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT VDS = -10V VGS(off) - Gate to Source Cut-off Voltage - V -1.5 10 TA = -25 C 25 C 75 C -1.0 1 125 C 0.1 -0.5 -50 0 50 100 150 0.01 -0.01 -0.1 -1 ID - Drain Current - A -10 -100 Tch - Channel Temperature - C Data Sheet D13455EJ1V0DS00 3 PA1911 RDS(on) - Drain to Source On-State Resistance - m RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE Vs. DRAIN CURRENT 350 VGS = -2.5 V 300 250 200 150 100 50 0 -0.01 -0.1 -1 ID - Drain Current - A -10 TA = 125 C 75 C 25 C -25 C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 250 VGS = -4.0 V 200 150 TA = 125 C 100 75 C 25 C -25 C 50 0 -0.01 -0.1 -1 -10 -100 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - m RDS (on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 VGS = -4.5 V DRAIN TO SOURCE ON STATE RESISTANCE vs. CHANNEL TEMPERATURE 200 ID = -1.5 A VGS = -2.5 V 150 TA = 125 C 100 75 C 25 C -25 C 150 -4.0 V 100 -4.5 V 50 50 0 -0.01 -0.1 -1 -10 -100 0 -50 ID - Drain Current - A 0 50 100 Tch - Channel Temperature -C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 150 RDS (on) - Drain to Source On-state Resistance - m Ciss, Coss, Crss - Capacitance - pF DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200 ID = -1.5 A 150 1000 Ciss f = 1 MHz VGS = 0 V Coss 100 Crss 100 50 0 0 -2 -4 10 -1 -10 VDS - Drain to Source Voltage - V -100 -6 -8 -10 VGS - Gate to Source Voltage - V 4 Data Sheet D13455EJ1V0DS00 PA1911 SWITCHING CHARACTERISTICS 10000 td(on), tr, td(off), tf - Swwitchig Time - ns SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 IF - Source to Drain Current - A -10 1000 10 tf td(off) tr td(on) 1 100 VDD = -10 V VGS(on) = -4.0 V RG = 10 -1 ID - Drain Current - A 0.1 10 -0.1 0.01 0.4 0.6 0.8 1.0 1.2 VF(S-D) - Source to Drain Voltage - V DYNAMIC INPUT CHARACTERISTICS VGS - Gate to Source Voltage - V -10 -8 ID = -2.5 A -6 -4 -2 0 VDD = -10 V -6.0 V 0 1 2 3 4 5 6 7 8 Qg - Gate Charge - nC TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - C/W Without Board 100 Mounted on 250mm2 x 35 m Copper Pad Connected to Drain Electrode in 50mm x 50mm x 1.6mm FR-4 Board Single Pulse 10 1 0.1 0.001 0.01 0.1 1 PW - Pulse Width - S 10 100 1000 Data Sheet D13455EJ1V0DS00 5 PA1911 [MEMO] 6 Data Sheet D13455EJ1V0DS00 PA1911 [MEMO] Data Sheet D13455EJ1V0DS00 7 PA1911 * The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8 |
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