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RFP42N03L, RF1S42N03LSM
Data Sheet July 1999 File Number
4302.2
42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49030.
Features
* 42A, 30V * rDS(ON) = 0.025 * Temperature Compensating PSPICE(R) Model * Can be Driven Directly from CMOS, NMOS, and TTL Circuits * Peak Current vs Pulse Width Curve * UIS Rating Curve * 175oC Operating Temperature * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER RFP42N03L RF1S42N03LSM PACKAGE TO-220AB TO-263AB BRAND FP42N03L F42N03L
Symbol
D
NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g., RF1S42N03LSM9A.
G
S
Packaging
JEDEC TO-220AB JEDEC TO-263AB
SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE
DRAIN (FLANGE)
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE(R) is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
RFP42N03L, RF1S42N03LSM
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFP42N03L, RF1S42N03LSM 30 30 10 42 Refer to Peak Current Curve Refer to UIS Curve 90 0.606 -55 to 175 300 260 UNITS V V V A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
W W/oC oC
oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 150oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS RJC RJA VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 24V, ID 42A, RL = 0.571 IG(REF) = 0.6mA (Figures 15, 20, 21) TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 150oC VGS = 10V ID = 42A, VGS = 5V (Figure 11) VDD = 15V, ID 42A, RL = 0.357, VGS = 5V, RGS = 5 (Figures 10, 18, 19) MIN 30 1 TYP 15 160 20 20 50 30 1.5 1650 575 200 MAX 2 1 25 100 0.025 260 60 60 36 1.8 1.65 80 UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF
oC/W oC/W
Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 5V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient
VDS = 25V, VGS = 0V, f = 1MHz (Figure 14)
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage Diode Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). SYMBOL VSD trr ISD = 42A ISD = 42A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.5 125 UNITS V ns
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RFP42N03L, RF1S42N03LSM Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 175 ID, DRAIN CURRENT (A)
Unless Otherwise Specified
50
40
30
20
10
0 25
50
75 100 125 TC, CASE TEMPERATURE (oC)
150
175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
2 1 THERMAL IMPEDANCE ZJC, NORMALIZED 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 100 101
PDM
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
IDM, PEAK CURRENT CAPABILITY (A)
TC = 25oC, TJ = 175oC
500 VGS = 10V VGS = 5V 100 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I
ID, DRAIN CURRENT (A)
100 100s
= I25
175 - TC 150
1ms 10 10ms 100ms DC
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC 10-4 10-3 10-2 10-1 100 101 t, PULSE WIDTH (s)
50
10 10-5
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
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RFP42N03L, RF1S42N03LSM Typical Performance Curves
200 IAS, AVALANCHE CURRENT (A) 100 ID, DRAIN CURRENT (A) STARTING TJ = 25oC 75 VGS = 4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = 4V VGS = 3.5V 25 VGS = 3V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5
Unless Otherwise Specified (Continued)
100
VGS = 10V
VGS = 5V
10
STARTING TJ = 150oC
50
If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1] 1 0.001 0.01 1 0.1 10 tAV, TIME IN AVALANCHE (ms) 100
NOTE: Refer to Intersil Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS
IDS(ON), DRAIN TO SOURCE CURRENT (A)
100 VDD = 15V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 75 25oC 50 -55oC 175oC rDS(ON), DRAIN TO SOURCE
100
ON RESISTANCE (m)
75
ID = 15A
ID = 30A
50
ID = 42A
25
25
ID = 2A PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) 5.0
0 0 1.5 3.0 4.5 6.0 7.5 VGS, GATE TO SOURCE VOLTAGE (V)
0
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
350 300
VDD = 15V, ID = 42A, RL = 0.357 tr NORMALIZED DRAIN TO SOURCE ON RESISTANCE
2.0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 5V, ID = 42A 1.5
SWITCHING TIME (ns)
250 200 150 tf 100 td(OFF) 50 td(ON) 0 0 10 20 30 40 RGS, GATE TO SOURCE RESISTANCE () 50
1.0
0.5
0 -80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
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RFP42N03L, RF1S42N03LSM Typical Performance Curves
2.0 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS, ID = 250A NORMALIZED GATE THRESHOLD VOLTAGE
Unless Otherwise Specified (Continued)
2.0
ID = 250A
1.5
1.5
1.0
1.0
0.5
0.5
0 -80
-40
0
40
80
120
160
200
0 -80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
2500 VGS = 0V, f = 0.1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
VDS , DRAIN TO SOURCE VOLTAGE (V) 30 VDD = BVDSS 24 VDD = BVDSS 4 VGS , GATE TO SOURCE VOLTAGE (V) 5
2000 C, CAPACITANCE (pF) CISS 1500
18
0.75 BVDSS 0.50 BVDSS 0.25 BVDSS RL = 0.714 IG(REF) = 0.6mA VGS = 5V I G ( REF ) 20 --------------------I G ( ACT ) I G ( REF ) 80 --------------------I G ( ACT )
3
1000 COSS 500 CRSS
12
2
6
1
0 t, TIME (s)
0
0
0
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD
+
0V
IAS 0.01
0 tAV
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
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RFP42N03L, RF1S42N03LSM Test Circuits and Waveforms
(Continued)
tON td(ON) VDS VDS VGS RL
+
tOFF td(OFF) tr tf 90%
90%
DUT RGS VGS
-
VDD
0
10% 90%
10%
VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 18. SWITCHING TIME TEST CIRCUIT
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
VDS RL VDD VDS VGS = 10V VGS
+
Qg(TOT)
VDD DUT Ig(REF) VGS = 1V 0 Qg(TH) IG(REF) 0 VGS
Qg(5) VGS = 5V
FIGURE 20. GATE CHARGE TEST CIRCUIT
FIGURE 21. GATE CHARGE WAVEFORMS
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RFP42N03L, RF1S42N03LSM PSPICE Electrical Model
.SUBCKT RFP42N03L 2 1 3 ;
CA 12 8 2.55e-9 CB 15 14 2.64e-9 CIN 6 8 1.45e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 33.3 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 4.9e-9 LSOURCE 3 7 4.9e-9 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 0.14e-3 RGATE 9 20 0.89 RLDRAIN 2 5 10 RLGATE 1 9 49 RLSOURCE 3 7 49 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 10.31e-3 RVTO 18 19 RVTOMOD 1 S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD
12 S1B CA EGS
rev 12/24/96
LDRAIN 2 RLDRAIN DRAIN RSCL2 RSCL1 + 51 5 51 6 8 + GATE LGATE 1 VTO + 16 21 MOS1 CIN 8 RSOURCE 7 RLSOURCE S1A 13 8 14 13 13 + 6 8 EDS S2A 15 S2B CB + 5 8 14 IT RBREAK 17 18 RVTO 19 VBAT + MOS2 ESCL 50 RDRAIN DBREAK 11 EBREAK + 17 18
DPLCAP 10
5
ESG
DBODY
-
9 EVTO 20 + 18 8 RGATE 6
RLGATE
LSOURCE 3 SOURCE
-
-
VBAT 8 19 DC 1 VTO 21 6 0.583 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/176,6))} .MODEL DBDMOD D (IS = 3.61e-13 RS = 5.06e-3 TRS1 = 3.05e-3 TRS2 = 7.57e-6 CJO = 2.16e-9 TT = 2.18e-8) .MODEL DBKMOD D (RS = 1.66e-1 TRS1 = -2.97e-3 TRS2 = 7.57e-6) .MODEL DPLCAPMOD D (CJO = 0.96e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 2.313 KP = 53.82 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 8.95e-4 TC2 = -1e-7) .MODEL RDSMOD RES (TC1 = 3.82e-3 TC2 = 1.17e-5) .MODEL RSCLMOD RES (TC1 = 2.03e-3 TC2 = 0.45e-5) .MODEL RVTOMOD RES (TC1 = -2.27e-3 TC2 = -5.75e-7) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.82 VOFF= -2.82) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.82 VOFF= -4.82) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.67 VOFF= 2.33) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.33 VOFF= -2.67) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley.
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RFP42N03L, RF1S42N03LSM
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
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