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PD- 94094A
SMPS MOSFET
IRF7477
HEXFET(R) Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computers and Communications Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current l Low Charge Ratio to Eliminate False Turn On in High Frequency Circuits
VDSS
30V
RDS(on) max (m) )
8.5@VGS = 10V 10@VGS = 4.5V
ID
14A 11A
S S S G
1
8 7
A A D D D D
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
30 20 14 11 110 2.5 1.6 0.02 -55 to + 150
Units
V V A W W mW/C C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 8
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1
6/26/01
IRF7477
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.029 6.5 7.7 --- --- --- --- --- Max. Units Conditions --- V V GS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 8.5 VGS = 10V, ID = 14A m 10 VGS = 4.5V, ID = 11A 2.5 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 100 VDS = 24V, VGS = 0V, TJ = 125C 200 VGS = 16V nA -200 VGS = -16V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 35 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 25 6.5 8.2 30 12 9.8 19 5.9 2710 1120 100 Max. Units Conditions --- S VDS = 15V, ID = 11A 38 ID = 11A --- nC VDS = 15V --- VGS = 4.5V --- VGS = 0V, VDS = 15V --- VDD = 15V --- ID = 11A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
500 8.2
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- --- 2.3 A 110 1.3 --- 140 200 140 210 V ns nC ns nC
VSD trr Qrr trr Qrr
--- 0.80 --- 0.65 --- 91 --- 130 --- 90 --- 140
2
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 11A, VGS = 0V TJ = 125C, I S = 11A, VGS = 0V TJ = 25C, I F = 11A, VR=15V di/dt = 100A/s TJ = 125C, IF = 11A, VR=15V di/dt = 100A/s
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IRF7477
1000
VGS 10V 7.0V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 10V 7.0V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
100
2.7V
2.7V
10
10
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 14A
I D , Drain-to-Source Current (A)
1.5
TJ = 25 C TJ = 150 C
100
1.0
0.5
10 2.5
V DS = 50V 20s PULSE WIDTH 3.0 3.5 4.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7477
100000 12 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
ID = 11A
VGS , Gate-to-Source Voltage (V)
VDS = 24V VDS = 15V
10
10000
C, Capacitance(pF)
8
Ciss
1000
Coss
6
Crss
100
4
2
10 1 10 100
0 0 10 20 30 40 50 60
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS (on)
100
TJ = 150 C
10
ID, Drain-to-Source Current (A)
100
100sec 10 1msec Tc = 25C Tj = 150C Single Pulse 0.1 1 10
TJ = 25 C
1
10msec
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2
1
VSD ,Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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Fig 6. On-Resistance Vs. Drain Current
IRF7477
15
VDS
12
RD
VGS RG
D.U.T.
+
I D , Drain Current (A)
-VDD
9
10V
6
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
3
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 P DM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7477
R DS (on) , Drain-to-Source On Resistance ( )
R DS(on) , Drain-to -Source On Resistance ( )
0.009
0.012
0.008 VGS = 4.5V 0.007
0.010
ID = 14A
VGS = 10V 0.006
0.008
0.005 0 20 40 60 80 100 120 ID , Drain Current (A)
0.006 3.0 3.4 3.8 4.2 4.6
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
1200
EAS , Single Pulse Avalanche Energy (mJ)
VG
VGS
3mA
TOP BOTTOM
Charge
IG ID
1000
ID 3.7A 6.6A 8.2A
Current Sampling Resistors
800
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
600
400
15 V
V (B R )D S S tp VD S L DRIVE R
200
RG 20V IAS tp
D .U .T IA S 0.01
+ V - DD
0 25 50 75 100 125 150
A
Starting TJ , Junction Temperature ( C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7477
SO-8 Package Details
D -B-
D IM
5
IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7
M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99
A
6 5 H 0 .2 5 (.0 1 0 ) M AM
5
8 E -A-
7
A1 B C D E e e1 H K
0 .1 0 (.0 0 4 ) L 8X 6 C 8X
1
2
3
4
e 6X
e1 A
K x 4 5
.05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0 .244 0 .01 9 .05 0 8
1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0 6.20 0.48 1.27 8
-C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS
L
R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X
NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
6 .4 6 ( .2 5 5 )
1 .7 8 (.0 7 0 ) 8X
1 .2 7 ( .0 5 0 ) 3X
SO-8 Part Marking
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IRF7477
SO-8 Tape and Reel
TER M IN AL N UM B ER 1
1 2.3 ( .484 ) 1 1.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
F EE D D IRE C TIO N
N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.00 (12.992) M AX .
14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board
Starting TJ = 25C, L = 15mH
RG = 25, IAS = 8.2A.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 6/01
8
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