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PD - 94311
IRF7476
HEXFET(R) Power MOSFET
Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current
VDSS
12V
RDS(on) max 8.0m@VGS = 4.5V
ID
15A
S S S G
1
8 7
A A D D D D
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
12 12 15 12 120 2.5 1.6 0.02 -55 to + 150
Units
V V A W W W/C C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 8
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1
04/29/02
IRF7476
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 12 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 0.6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.014 6.0 12 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 8.0 VGS = 4.5V, ID = 15A m 30 VGS = 2.8V, ID = 12A 1.9 V VDS = VGS, ID = 250A 100 VDS = 9.6V, VGS = 0V A 250 VDS = 9.6V, VGS = 0V, TJ = 125C 200 VGS = 12V nA -200 VGS = -12V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 31 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 26 4.6 11 17 11 29 19 8.3 2550 2190 450 Max. Units Conditions --- S VDS = 6.0V, ID = 12A 40 I D = 12A --- nC VDS = 10V --- VGS = 4.5V --- VGS = 0V, VDS = 5.0V --- VDD = 6.0V --- ID = 12A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 6.0V --- pF = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
160 12
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- 0.87 0.73 55 59 54 60 2.5 A 120 1.2 --- 82 89 81 90 V ns nC ns nC
VSD trr Qrr trr Qrr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V TJ = 125C, IS = 12A, VGS = 0V TJ = 25C, IF = 12A, VR=12V di/dt = 100A/s TJ = 125C, IF = 12A, VR=12V di/dt = 100A/s
2
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IRF7476
1000
TOP
VGS
ID , Drain-to-Source Current (A)
10V 8.0V 5.0V 4.5V 3.5V 2.7V 2.0V BOTTOM 1.5V
1000
TOP
VGS
10V 8.0V 5.0V 4.5V 3.5V 2.7V 2.0V BOTTOM 1.5V
ID , Drain-to-Source Current (A)
100
100
10
10
1
1
0.1
1.5V
1.5V
0.01
0.1
20s PULSE WIDTH Tj = 25C
0.001 0.1 1 10 100 0.01 0.1 1
20s PULSE WIDTH Tj = 150C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
2.0
I D = 15A
ID , Drain-to-Source Current ( )
100.00
1.5
10.00
(Normalized)
T J = 150C
R DS(on) , Drain-to-Source On Resistance
1.0
1.00
T J = 25C VDS = 10V 20s PULSE WIDTH
0.5
0.10 1.5 2.0 2.5 3.0 3.5 4.0
0.0 -60 -40 -20 0 20 40 60 80
V GS = 4.5V
100 120 140 160
VGS, Gate-to-Source Voltage (V)
Tj, Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7476
100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C SHORTED gs ds Crss = C gd Coss = Cds + Cgd
6
I D = 12A
5
V DS = 9.6V V DS = 6V V DS = 2.4V
C, Capacitance(pF)
VGS, Gate-to-Source Voltage (V)
10000
4
C iss C oss
1000
3
2
C rss
100 1 10 100
1
0 0 5 10 15 20 25 30
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100
ID , Drain-to-Source Current (A)
100 100sec 10 1msec 10msec 1 Tc = 25C Tj = 150C Single Pulse 0.1 0 1 10 100 VDS , Drain-to-Source Voltage (V)
I SD, Reverse Drain Current (A)
10
TJ = 150
C
TJ = 25 C
1
0.1 0.2 0.4 0.6 0.8 1.0
V GS = 0 V
1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7476
15
VDS
12
RD
VGS RG
D.U.T.
+
-VDD
ID , Drain Current (A)
9
4.5V
6
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
3
VDS 90%
0 25 50 75 100 125 150
Tc, Case Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
(Z thJA )
D = 0.50
10
0.20 0.10
Thermal Response
0.05
0.02 1 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 0.01 0.1 1
Notes: 1. Duty factor D = 2. Peak T t1/ t
2 J = P DM x Z thJA
P DM t1 t2 +T A 100
10
1000
t 1, Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF7476
R DS (on) , Drain-to-Source On Resistance (m )
7.5
R DS(on) , Drain-to -Source On Resistance (m )
15.00
13.00
7.3
7.0
VGS = 4.5V
11.00
9.00
6.8
7.00
ID = 15A
6.5 0 20 40 60 80 100 120 ID , Drain Current (A)
5.00 2.0 4.0 6.0 8.0 10.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
400
VG
VGS
3mA
Charge
IG ID
Current Sampling Resistors
300
ID TOP 5.4A 9.6A 12A BOTTOM
Fig 13a&b. Basic Gate Charge Test Circuit and Waveform
EAS , Single Pulse Avalanche Energy (mJ)
A
200
15 V
100
V (B R )D S S tp VD S L DRIVE R
RG 20V IAS tp
D .U .T IA S 0.01
+ V - DD
0 25 50 75 100 125 150
Starting Tj, Junction Temperature (C)
Fig 14a&b. Unclamped Inductive Test circuit and Waveforms
Fig 14c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7476
SO-8 Package Details
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
c D E e e1 H K L y
1
2
3
4
.050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y
K x 45
8X L 7
8X c
NOT ES : 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS T O JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050]
F OOT PRINT 8X 0.72 [.028]
6.46 [.255]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DATE CODE (YWW) Y = LAS T DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER
7
INTERNAT IONAL RECTIFIER LOGO
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YWW XXXX F7101
IRF7476
SO-8 Tape and Reel
T ER M INA L NU M BE R 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEE D D IR EC TIO N
N OT E S : 1 . CO NT RO L L ING DIM E N S ION : M IL L IM E T E R. 2 . A L L D IM E N S ION S A R E S H O W N IN M IL L IM E T E R S (IN CHES ). 3 . OU TL IN E C O N F O RM S T O E IA -4 81 & E IA -5 4 1.
330.00 (12 .9 92) MA X.
14.40 ( .566 ) 12.40 ( .488 ) N O TE S : 1. CO N T RO LL ING D IME N SIO N : MIL LIM ET ER . 2. O UT LIN E C ON F O RM S TO EIA-481 & E IA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25C, L = 2.3mH
RG = 25, IAS = 12A.
Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/02
8
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