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DATA SHEET
PHOTOCOUPLERS
PS2503 -1, -2, -4 PS2503L-1, -2, -4
LOW INPUT CURRENT, HIGH SPEED SWITCHING MULTI PHOTOCOUPLER SERIES
DESCRIPTION
PS2503-1, -2, -4 and PS2503L-1, -2, -4 series are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. PS2503-1, -2, -4 are in a plastic DIP (Dual In-line Package) and PS2503L-1, -2, -4 are lead bending type (Gullwing) for surface mount.
FEATURES
* High isolation voltage (BV: 5 000 Vr.m.s. MIN.) * High speed switching (tr = 20 s, tf = 30 s TYP., @RL = 10 k) * High current transfer ratio (CTR: 100 % MIN. @IF = 1 mA, VCE = 5 V) * Taping Product number (PS2503L-1-E3, E4, F3, F4) (PS2503L-2-E3, E4) * UL recognized [File No. E72422(S)]
APPLICATIONS
Interface circuit for various instrumentations, control equipments. * AC Line/Digital Logic .................................................. Isolate high voltage transients * Digital Logic/Digital Logic ........................................... Eliminate spurious ground loops * Twisted pair line receiver ........................................... Eliminate ground look pick-up * Telephone/Telegraph line receiver ............................ Isolate high voltage transients * High Frequeny Power Supply Feedback Control ...... Maintain floating ground * Relay Contact Monitor ................................................ Isolate floating grounds and transients * Power Supply Monitor ................................................ Isolate transients and ground systems
Document No. P11304EJ3V0DS00 (3rd edition) (Previous No. LC-2305A) Date Published February 1996 P Printed in Japan
(c)
1993
PS2503-1, -2, -4, PS2503L-1, -2, -4
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
(PS2503-1) (PS2503L-1) Diode Reverse Voltage Forward Current (DC) Power Dissipation Derating Power Dissipation Peak Forward Current (PW = 100 s, Duty Cycle 1 %) Transistor Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation Coupled Isolation Voltage*1 Storage Temperature Operating Temperature Lead Temperature (Soldering 10 s) BV Tstg Topt Tsol 5 000 -55 to +150 -55 to +100 260 5 000 -55 to +150 -55 to +100 260 Vr.m.s. C C C VCEO VECO IC PC/C PC 40 0.6 30 1.5 150 40 0.6 30 1.2 120 V V mA mW/C mW/Channel VR IF PD/C PD IF(Peak) 6 80 1.5 150 1 6 80 1.2 120 1 V mA mW/C mW/Channel A (PS2503-2, 4) (PS2503L-2, 4)
*1 AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output.
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER Forward Voltage Diode Reverse Current Junction Capacitance Transistor Collector to Emitter Dark Current Current Transfer Ratio*2 Collector Saturation Voltage Coupled Isolation Resistance Isolation Capacitance Rise Fall Time*3 SYMBOL VF IR Ct ICEO CTR VCE(sat) R1-2 C1-2 tr tf 1011 0.5 20 30 100 200 50 100 400 0.25 MIN. TYP. 1.1 MAX. 1.3 5 UNIT V TEST CONDITIONS IF = 1 mA VR = 5 V V = 0, f = 1 MHz VCE = 40 V, IF = 0 IF = 1 mA, VCE = 5 V IF = 1 mA, IC = 0.2 mA Vin-out = 1 kV V = 0, f = 1 MHz VCC = 5 V, IF = 1 mA, RL = 10 k VCC = 5 V, IF = 1 mA, RL = 10 k
A
pF nA % V pF
s s
Time*3
*2 CTR rank (only PS2503-1, PS2503L-1) K : 200 to 400 L : 150 to 300 M : 100 to 200
*3 Test Circuit for Switching Time
PULSE INPUT PW = 100 s Duty Cycle = 1/10 VCC
IF VOUT 50 RL = 10 k
2
PS2503-1, -2, -4, PS2503L-1, -2, -4
TYPICAL CHARACTERISTICS (TA = 25 C)
DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE 150
PC - Transistor Power Dissipation - mW
TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 150
PD - Diode Power Dissipation - mW
PS2503-1 PS2503L-1 100 1.5 mW / C PS2503-2 PS2503-4 PS2503L-2 PS2503L-4 50 1.2 mW / C
PS2503-1 PS2503L-1 100 1.5 mW / C PS2503-2 PS2503-4 PS2503L-2 PS2503L-4 50 1.2 mW / C
0
25
50
75
100
125
150
0
25
TA - Ambient Temperature - C FORWARD CURRENT vs. FORWARD VOLTAGE 100 50
IC - Collector Current - mA
50 75 100 125 TA - Ambient Temperature - C
150
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 12
10 5 mA 100 C 60 C 25 C 0 C -25 C -55 C
4 mA 3 mA 2 mA
IF - Forward Current - mA
10 5
8
6 1.5 mA 4 1 mA 0.8 mA IF = 0.6 mA 2 4 6 8 10
1 0.5
0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
2
VF - Forward Voltage - V
0
VCE - Collector to Emitter Voltage - V COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 100
ICEO - Collector to Emitter Dark Current - nA
COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 30 10 mA
50 10
IC - Collector Current - mA
10 5.0
VCE = 40 V 30 V 20 V 10 V
5 mA 5 2 mA 1 mA 1.0 0.5 IF = 0.8 mA
1.0
0.3
0.1 -25 0 25 50 75 100 0 0.2 0.4 0.6 0.8 1.0 TA - Ambient Temperature - C VCE(sat) - Collector tSaturation Voltage - V
3
PS2503-1, -2, -4, PS2503L-1, -2, -4
400
CTR - Current Transfer Ratio - %
CURRENT TRANSFER RATIO (CTR) vs. FORWARD CURRENT 1.4
CTR - Normalized Output current
NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE Normalized to 1.0 at TA = 25 C IF = 1 mA, VCE = 5 V
1.2 1.0 0.8 0.6 0.4 0.2
300
200
100
0 0.3 0.5
0 1 5 10 50 100 IF - Forward Current - mA
30
0
25
50
75
100
TA - Ambient Temperature - C
SWITCHING TIME vs. LOAD RESISTANCE 50 500
SWITCHING TIME vs. AMBIENT TEMPERATURE Sample CTR = 290 % VCC = 5 V IF = 1 mA RL = 10 kW tf ts tr 10 5 td
10
t - Switching Time - s
tr 100 td tf IF = 1 mA, VCC = 5 V Sample : CTR 209 % at IF = 1 mA IF VCC ts 50 VO RL 50 k 100 k 1 -50 -25 0 25
t - Switching Time - s
5
50
1 0.5
0.1 100 500 1 k 5 k 10 k
50
75
100
RL - Load Resistance -
TA - Ambient Temperature - C
FREQUENCY
AV - Relative Voltage Gain - dB
LONG TERM CTR DEGRADATION VCC = 5 V Sample CTR = 209 % 1.2 TYP. 1.0
CTR - Normalized
0 3.0 6.0 9.0 12.0 15.0 100 1k 10 k 5.6 k
0.8 0.6 0.4 0.2 0 102
1k
100
IF = 5 mA TA = 25 C IF = 5 mA TA = 60 C
100 k
1M
f - Frequency - Hz
103 Time - Hr
104
105
4
PS2503-1, -2, -4, PS2503L-1, -2, -4
SOLDERING PRECAUTION
(1) Infrared reflow soldering * * * * Peak reflow temperature Reflow time Number of reflow processes Flux : 235 C or below (Plastic surface temperature) : 30 seconds or less (Time period during which the plastic surface temperature is 210 C) : Three : Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)
REFLOW TEMPERATURE PROFILE
PACKAGE'S SURFACE TEMPERATURE (oC)
(ACTUAL HEAT) to 10 s 235 oC MAX 210 oC
120 to 160 oC
to 30 s
60 to 90 s (PRE-HEAT)
TIME (s)
Peak Temperature 235 C or Lower
(2) Dip soldering * * * Peak temperature Time Flux : 260 C or lower : 10 s or less : Rosin-base flux
5
PS2503-1, -2, -4, PS2503L-1, -2, -4
* 4 Pin DIP Type (Lead bending; -1 channel) Taping 1. TAPING DIRECTION PS2503L-1-E3, F3 PS2503L-1-E4, F4
2. OUTLINE AND DIMENSIONS (;TAPE)
Unit: mm
P0 P2 D0 T0
F
E
W
D1 P1 A
T1
3. OUTLINE AND DIMENSIONS (;REEL)
2 0.5
B
18.0 0.5
A
21 0.8
R1.0
4. PACKING E3, E4; 1000 pieces/reel F3, F4; 2000 pieces/reel
6
NEC 2503 * KD201
NEC 2503 * KD201
NEC 2503 * KD201
NEC 2503 * KD201
NEC 2503 * KD201
NEC 2503 * KD201
SYMBOL A B D0 D1 E F P1 P0 P2 T0 T1 W
RATINGS 5.6 0.1 10.3 0.1 1.55 0.1 1.55 0.1 1.75 0.1 7.5 0.1 8 0.1 4 0.1 2 0.1 4.3 0.2 0.3 16 0.3
Unit: mm
W
SYMBOL A N W
RATINGS E3, E4 F3, F4 250 330 80 5.0 16.4 +2.0 -0
PS2503-1, -2, -4, PS2503L-1, -2, -4
* 8 Pin DIP Type (Lead bending; -2 channel) Taping 1. TAPING DIRECTION
PS2503L-2-E3 PS2503L-2-E4
NEC JAPAN PS2503-2 *ND101
NEC JA PS2503 *ND1
2. OUTLINE AND DIMENSIONS (;TAPE)
Unit: mm P0 P2 D0 E T0 SYMBOL A B D0 D1 E F P0 P1 P2 T0 T1 W RATINGS 10.7 0.1 10.3 0.1 1.55 0.1 1.55 0.1 1.75 0.1 7.5 0.1 4.0 0.1 12.0 0.1 2.0 0.1 4.3 0.2 0.3 16 0.3
F W
D1
P1
T1
A
3. OUTLINE AND DIMENSIONS (;REEL)
B
2 0.5
18.0 0.5
A
21 0.8
R1.0
4. PACKING; 1000 pieces/reel
APAN 03-2 101
*ND101
NEC JAPAN PS2503-2
Unit: mm SYMBOL A N W RATINGS 330 80 5.0 +2.0 16.4 -0
W
7
PS2503-1, -2, -4, PS2503L-1, -2, -4
PACKAGE DIMENSIONS (Unit: mm) DIP (Dual In-line Package)
PS2503-1
5.1 MAX. 43
PS2503-2
10.2 MAX.
8765
12
6.5
1234 1,3. Anode 2,4. Cathode 5,7. Emitter 6,8. Collector 2.54 7.62
6.5 2.8 4.55 MIN. MAX. 0.65 3.8 MAX.
3.8 MAX.
2.54
7.62
1. Anode 2. Cathode 3. Emitter 4. Collector
2.8 4.55 MIN. MAX.
0.65
1.34
0.50 0.10 0.25 M
0 to 15
1.34
0.50 0.10 0.25 M
0 to 15
PS2503-4
16 15 14 13 12 11 10 9 20.3 MAX.
12345678
6.5
3.8 MAX.
2.54
7.62
1, 3, 5, 7. 2, 4, 6, 8. 9,11,13,15. 10,12,14,16.
Anode Cathode Emitter Collector
2.8 4.55 MIN. MAX.
0.65
1.34
0.50 0.10
0.25
M
0 to 15
PACKAGE DIMENSIONS (Unit: mm) Lead Bending type (Gull-wing)
PS2503L-1
5.1 MAX. 12 1. Anode 2. Cathode 3. Emitter 4. Collector
0.05 to 0.2
43
PS2503L-2
8765
10.2 MAX. 1234 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 2.54
3.8 MAX. 0.05 to 0.2
2.54
3.8 MAX.
7.62 6.5
7.62 6.5
9.60 0.4 1.34 0.10 0.25
M
0.9 0.25 1.34 0.10 0.25
M
9.60 0.4
0.9 0.25
PS2503L-4
16 15 14 13 12 11 10 9 20.3 MAX. 12345678 1, 3, 5, 7. 2, 4, 6, 8. 9,11,13,15. 10,12,14,16. Anode Cathode Emitter Collector
2.54
3.8 MAX.
0.05 to 0.2
7.62 6.5
1.34 0.10
0.25
M
9.60 0.4
0.9 0.25
8
PS2503-1, -2, -4, PS2503L-1, -2, -4
[MEMO]
9
PS2503-1, -2, -4, PS2503L-1, -2, -4
Caution
The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Galium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11
2

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