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| MITSUBISHI SEMICONDUCTOR M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT 16 O1 15 O2 14 O3 13 O4 OUTPUT 12 O5 11 O6 10 O7 9 NC IN1 1 IN2 2 IN3 3 IN4 4 IN5 5 IN6 6 IN7 7 GND 8 FEATURES High breakdown voltage (BVCEO 40V) High-current driving (Ic(max) = 400mA) Driving available with PMOS IC output Wide operating temperature range (Ta = -20 to +75C) 16P4(P) Package type 16P2N-A(FP) NC : No connection CIRCUIT DIAGRAM APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces OUTPUT INPUT 20K 20K 2K GND FUNCTION The M54519P and M54519FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 20k between input transistor bases and input pins. The output transistor emitters are all connected to the GND pin (pin 8). Collector current is 400mA maximum. Collector-emitter supply voltage is 40V maximum. The M54519FP is enclosed in a molded small flat package, enabling space-saving design. The seven circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Output, H Current per circuit output, L Ta = 25C, when mounted on board Ratings -0.5 ~ +40 400 -0.5 ~ +40 1.47(P)/1.00(FP) -20 ~ +75 -55 ~ +125 Unit V mA V W C C Aug. 1999 MITSUBISHI SEMICONDUCTOR M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS Symbol VO Output voltage Duty Cycle P : no more than 8% FP : no more than 6% Duty Cycle P : no more than 30% FP : no more than 25% IC 400mA "H" input voltage IC 200mA Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) "L" input voltage Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Limits min 0 0 0 8 5 0 typ -- -- -- -- -- -- max 40 400 Unit V IC mA 200 30 0.5 V V VIH VIL ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE (sat) II hFE Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Test conditions ICEO = 100A VI = 8V, IC = 400mA VI = 5V, IC = 200mA VI = 17V VCE = 4V, IC = 400mA, Ta = 25C Limits min 40 -- -- 0.3 1000 typ+ -- 1.3 1.0 0.8 6000 max -- 2.4 1.6 1.8 -- Unit V V mA -- Collector-emitter breakdown voltage Collector-emitter saturation voltage Input current DC amplification factor + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 40 400 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT Measured device VO TIMING DIAGRAM 50% RL OUTPUT 50% INPUT PG 50 CL OUTPUT 50% 50% ton (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 8VP-P (2) Input-output conditions : RL = 25, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Aug. 1999 MITSUBISHI SEMICONDUCTOR M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 400 VI = 5V Thermal Derating Factor Characteristics 2.0 Power dissipation Pd (W) 1.5 M54519P Collector current Ic (mA) 300 1.0 M54519FP 200 Ta = 75C 0.5 100 Ta = 25C Ta = -20C 0 0 25 50 75 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Duty-Cycle-Collector Characteristics (M54519P) 500 300 500 Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54519P) Collector current Ic (mA) Collector current Ic (mA) 400 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty-Cycle-Collector Characteristics (M54519FP) 500 500 Duty cycle (%) Duty-Cycle-Collector Characteristics (M54519FP) Collector current Ic (mA) Collector current Ic (mA) 400 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 300 100 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. 100 *Ta = 75C 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DC Amplification Factor Collector Current Characteristics 104 7 VCE = 4V Ta = 75C Grounded Emitter Transfer Characteristics 400 VCE = 4V Ta = 75C Ta = -20C DC amplification factor hFE 5 Collector current Ic (mA) 3 2 300 Ta = 25C Ta = 25C Ta = -20C 103 7 5 3 2 200 100 102 1 10 2 3 5 7 102 2 3 5 7 103 0 0 1 2 3 4 Collector current Ic (mA) Input voltage VI (V) Input Characteristics 2.0 Input current II (mA) 1.5 1.0 Ta = -20C 0.5 Ta = 25C Ta = 75C 0 0 5 10 15 20 Input voltage VI (V) Aug. 1999 |
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