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| August 1997 FDC6303N Digital FET, Dual N-Channel General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series. Features 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.6 @ VGS = 2.7 V RDS(ON) = 0.45 @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 Mark: .303 4 3 5 2 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current T A = 25C unless otherwise noted FDC6303N 25 8 - Continuous - Pulsed 0.68 2 (Note 1a) (Note 1b) Units V V A Maximum Power Dissipation 0.9 0.7 -55 to 150 6.0 W Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) C kV THERMAL CHARACTERISTICS RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 140 60 C/W C/W (c) 1997 Fairchild Semiconductor Corporation FDC6303N Rev.C DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25 o C VDS = 20 V, VGS = 0 V TJ = 55C IGSS Gate - Body Leakage Current VGS = 8 V, VDS= 0 V ID = 250 A, Referenced to 25 o C VDS = VGS, ID = 250 A VGS = 4.5 V, ID = 0.5 A TJ =125C VGS = 2.7 V, ID = 0.2 A ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD On-State Drain Current Forward Transconductance VGS = 2.7 V, VDS = 5 V VDS = 5 V, ID= 0.5 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz 0.5 1.45 0.65 -2.6 0.8 0.33 0.52 0.44 1.5 0.45 0.8 0.6 A S ON CHARACTERISTICS (Note 2) 25 26 1 10 100 V mV /o C A A nA mV /o C V BVDSS/TJ IDSS VGS(th)/TJ VGS(th) RDS(ON) Gate Threshold Voltage Temp.Coefficient Gate Threshold Voltage Static Drain-Source On-Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 50 28 9 pF pF pF SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 5 V, ID = 0.5 A, VGS = 4.5 V VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 3 8.5 17 13 1.64 0.38 0.45 6 18 30 25 2.3 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Source Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A (Note 2) 0.83 0.3 1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. RJA shown below for single device operation on FR-4 in still air. a. 140OC/W on a 0.125 in2 pad of 2oz copper. b. 180OC/W on a 0.005 in2 of pad of 2oz copper. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDC6303N Rev.C Typical Electrical Characteristics I D , DRAIN-SOURCE CURRENT (A) 1.5 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.2 VGS = 4.5V 3.5 3.0 2.7 2.5 2.0 2 VGS = 2.0V 1.5 0.9 2.5 2.7 3.0 3.5 4.5 0.6 1 0.3 1.5 0 0 0.5 1 1.5 2 0.5 0 0.2 0.4 0.6 0.8 1 1.2 VDS , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 DRAIN-SOURCE ON-RESISTANCE R DS(on) , ON-RESISTANCE (OHM) 2 I D =0.5 A 1.4 ID= 0.5A 1.6 R DS(ON), NORMALIZED VGS = 4.5 V 1.2 1.2 1 0.8 125C 0.4 25C 0.8 0 0.6 -50 1 1.5 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 2 2.5 3 3.5 4 VGS , GATE TO SOURCE VOLTAGE (V) 4.5 5 Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. V DS = 5.0V ID , DRAIN CURRENT (A) 0.8 T = -55C J 25C 125C IS , REVERSE DRAIN CURRENT (A) 1 1 V GS = 0V 0.1 TJ = 125C 25C 0.6 0.01 -55C 0.4 0.001 0.2 0 0.0001 0 0.5 1 1.5 2 2.5 VGS , GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6303N Rev.C Typical Electrical And Thermal Characteristics 5 V GS , GATE-SOURCE VOLTAGE (V) 150 ID = 0.5A 4 VDS = 5V 100 10V 15V CAPACITANCE (pF) 50 Ciss Coss 3 2 20 1 10 f = 1 MHz V GS = 0V C rss 0 0 0.4 0.8 1.2 1.6 2 Q g , GATE CHARGE (nC) 5 0.1 V DS 0.5 1 2 5 10 25 , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 5 5 I D , DRAIN CURRENT (A) 1 POWER (W) IT LIM N) (O S RD 10 1m 0s s 10 m s 10 0m 1s 4 3 SINGLE PULSE RJA =See note 1b TA = 25C 0.3 0.1 s DC 2 0.03 0.01 0.1 V GS = 4.5V SINGLE PULSE R JA = See note 1b TA = 25C 0.2 0.5 1 2 5 10 20 40 1 0 0.01 0.1 1 10 100 300 VDS , DRAI N-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 D = 0.5 0.2 0.1 0.05 0.2 0.1 P(pk) 0.05 0.02 0.01 Single Pulse RJA (t) = r(t) * R JA R JA = See Note 1b t1 t2 0.02 0.01 0.0001 TJ - TA = P * R JA(t) Duty Cycle, D = t 1/ t 2 0.01 0.1 t 1, TIME (sec) 1 10 100 300 0.001 Figure 11. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal response will change depending on the circuit board design. FDC6303N Rev.C |
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