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VFT150-50
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The VFT150-50 is a N-Channel Enhancement Mode RF Power MOSFET Designed for AM/FM Power Amplifier Applications up to 175 MHz.
PACKAGE STYLE .500 4L FLG
.112x45 A FULL R L
FEATURES:
* PG = 13.5 dB Typical at 175 MHz * 10:1 Load VSWR Capability * OmnigoldTM Metalization System
S
D
O.125 NOM.
C B
G
E H D G F
S
IJ
K
MAXIMUM RATINGS
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
ID VDSS VGS PDISS TJ T STG JC
16 A 125 V 30 V 300 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 0.6 OC/W
O O O
A B C D E F G H I J K L
.220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89
.230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67
ORDER CODE: ASI10709
NONE
CHARACTERISTICS
SYMBOL
BV DSS IDSS IGSS VGS(th) gfs Ciss Coss Crss PG D ID = 50 mA VDS = 50 V VDS = 0 V VDS = 10 V VDS = 10 V VDS = 50 V
TC = 25 OC
TEST CONDITIONS
VGS = 0 V VGS = 20 V ID = 100 mA ID = 5 A VGS = 0 V f = 1.0 MHz f = 175 MHz
MINIMUM
125
TYPICAL MAXIMUM UNITS
5.0 1.0 5.0 V mA A V mS
1.0 3,000 290 130 28 13 45 13.5 55
pF dB %
VDD = 50 V IDQ = 250 mA Pout = 150 W VSWR = 10:1 AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1

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