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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1800
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1800 is a switching device which can be driven directly by a 4.0-V power source. The PA1800 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit : mm)
5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate
1.2 MAX. 1.00.05 0.25 3 +5 -3 0.10.05 0.5 0.6 +0.15 -0.1
FEATURES
* Can be driven by a 4.0-V power source * Low on-state resistance RDS(on)1 = 27 m MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 39 m MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 45 m MAX. (VGS = 4.0 V, ID = 3.0 A)
1 4
0.145 0.055
3.15 0.15 3.0 0.1
6.4 0.2 4.4 0.1 1.0 0.2
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
0.65 0.27 +0.03 -0.08 0.8 MAX.
PA1800GR-9JG
0.1
0.10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
30 20 5.0 20 2.0 150 -55 to +150 V V A A W C C
Gate Protection Diode Source Gate Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
Body Diode
Total Power Dissipation Channel Temperature Storage Temperature
Notes 1. PW 10 s, Duty Cycle 1 % 2 2. Mounted on ceramic substrate of 50 cm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D11407EJ1V0DS00 (1st edition) Date Published February 2000 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1999, 2000
PA1800
5
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.0 A VGS = 10 V, ID = 3.0 A VGS = 4.5 V, ID = 3.0 A VGS = 4.0 V, ID = 3.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V ID = 3.0 A VGS(on) = 10 V RG = 10 VDD = 24 V ID = 5.0 A VGS = 10 V IF = 5.0 A, VGS = 0 V IF = 5.0 A, VGS = 0 V di/dt = 100 A/s 1.0 3.0 1.41 7.0 20 29 32 680 470 170 18 70 60 26 23 2 7 0.74 60 80 27 39 45 MIN. TYP. MAX. 10 10 2.0 UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG VDD ID VGS 0 = 1 s Duty Cycle 1 % ID
Wave Form
VGS VGS
Wave Form
IG = 2 mA VGS(on)
90 %
RL VDD
0
10 %
PG.
90 % 90 %
50
ID
0 10 % 10 %
td(on) ton
tr td(off) toff
tf
2
Data Sheet D11407EJ1V0DS00
PA1800
5
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80
ID - Drain Current - A
FORWARD BIAS SAFE OPERATING AREA 100
d ite ) Lim 10 V n) S(o = RD VGS (@
ID(pulse) ID(DC)
dT - Derating Factor - %
PW
10 10 0m s
10
=1
ms
ms
60
1
DC
40
0.1
TA = 25C Single Pulse Mounted on Ceramic 2 Substrate of 50cm x 1.1 mm
20
0
30
60
90
120
150
0.01 0.1
1
10
100
VDS - Drain to Source Voltage - V
TA - Ambient Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 Pulsed
TRANSFER CHARACTERISTICS 100 10 VDS = 10 V
ID - Drain Current - A
15
VGS = 4.5 V VGS = 4.0 V
ID - Drain Current - A
1
TA = 125C
0.1
10 VGS = 2.5 V 5
75C
0.01
25C
0.001
-25C
0
0.0001
0 0.2 0.4 0.6 0.8 1.0
0
0.5
1
1.5
2
2.5
3
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMMITTANCE vs. DRAIN CURRENT 100
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
2.0
| yfs | - Forward Transfer Admittance - S
VDS = 10 V ID = 1 mA
VDS = 10 V
10
TA = -25C 25C
1.5
1
75C 125C
1.0
0.1
0.5 -50
0
50
100
150
0.01 0.001
0.01
0.1
1
10
100
Tch - Channel Temperature - C
ID - Drain Current - A
Data Sheet D11407EJ1V0DS00
3
PA1800
RDS(on) - Drain to Source On-State Resistance - m
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = 4.0 V 50
TA = 125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = 4.5 V 50
TA = 125C
40
75C 25C
40
75C
30
-25C
30
25C
-25C 20
20
10 0.1 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 VGS = 10 V 40
TA = 125C 75C
10 0.1 1 10 100 ID - Drain Current - A
RDS(on) - Drain to Source On-State Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 60 50 40 30 10 V 20 10 0 -50 VGS = 4.0 V 4.5 V ID = 3.0 A
30
20
25C
-25C
10
0 0.1 1 10 100 ID - Drain Current - A
0 50 100 Tch - Channel Temperature -C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
150
RDS (on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 ID = 3.0 A
50 40 30 20 10 0 0
10000
Ciss, Coss, Crss - Capacitance - pF
f = 1 MHz VGS = 0 V
1000 Ciss Coss 100 Crss
10 0.1
5 10 15 20
1
10
100
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
4
Data Sheet D11407EJ1V0DS00
PA1800
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Swwitchig Time - ns
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
IF - Source to Drain Current - A
VDD = 15 V VGS(on) = 10 V RG = 10 tr td(off) tf td(on)
VGS = 0 V
1
100
0.1
10
0.01
0.001
1 0.01
0.1 1 ID - Drain Current - A
10
0.0001
0.2
0.4 0.6 0.8 VF(S-D) - Source to Drain Voltage - V
1
DYNAMIC INPUT CHARACTERISTICS 12 ID = 5.0 A
VGS - Gate to Source Voltage - V
10 8
VDD = 12 V VDD = 18 V VDD = 24 V
6 4 2 0
0
4
8
12
16
20
24
QG - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(ch-A) - Transient Thermal Resistance - C/W
Mounted on ceramic substrate of 50 cm2 x 1.1 mm Single Pulse
100
62.5C/W
10
1
0.1 0.001
0.01
0.1
1 PW - Pulse Width - s
10
100
1000
Data Sheet D11407EJ1V0DS00
5
PA1800
[MEMO]
6
Data Sheet D11407EJ1V0DS00
PA1800
[MEMO]
Data Sheet D11407EJ1V0DS00
7
PA1800
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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