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LL4148.LL4448 Vishay Telefunken Silicon Epitaxial Planar Diodes Features D Electrical data identical with the devices 1N4148 and 1N4448 respectively Applications 94 9371 Extreme fast switches Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IFSM IFRM IF IFAV PV Tj Tstg Value 100 75 2 500 300 150 500 175 -65...+175 Unit V V A mA mA mA mW C C tp=1ms VR=0 Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Document Number 85557 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 1 (4) LL4148.LL4448 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=5mA IF=50mA IF=100mA VR=20V VR=20V, Tj=150C VR=75V IR=100mA, tp/T=0.01, tp=0.3ms VR=0, f=1MHz, VHF=50mV VHF=2V, f=100MHz IF=IR=10mA, iR=1mA IF=10mA, VR=6V, iR=0.1xIR, RL=100W Type LL4448 LL4148 LL4448 Symbol VF VF VF IR IR IR V(BR) CD Min 0.62 Typ 0.86 0.93 Max 0.72 1 1 25 50 5 4 45 8 4 Unit V V V nA Reverse current mA mA V pF % ns ns Breakdown voltage Diode capacitance Rectification efficiency Reverse recovery time y 100 hr trr trr Characteristics (Tj = 25_C unless otherwise specified) 1000 IF - Forward Current ( mA ) IF - Forward Current ( mA ) LL 4148 100 Scattering Limit 10 1000 LL 4448 100 Scattering Limit 10 1 Tj = 25C 0 0.4 0.8 1.2 1.6 2.0 1 Tj = 25C 0 0.4 0.8 1.2 1.6 2.0 0.1 94 9096 0.1 94 9097 VF - Forward Voltage ( V ) VF - Forward Voltage ( V ) Figure 1. Forward Current vs. Forward Voltage Figure 2. Forward Current vs. Forward Voltage www.vishay.de * FaxBack +1-408-970-5600 2 (4) Document Number 85557 Rev. 3, 01-Apr-99 LL4148.LL4448 Vishay Telefunken 1000 CD - Diode Capacitance ( pF ) IR - Reverse Current ( nA ) 3.0 2.5 2.0 1.5 1.0 0.5 0 1 94 9098 Tj = 25C 100 f = 1 MHz Tj = 25C Scattering Limit 10 1 10 VR - Reverse Voltage ( V ) 100 94 9099 0.1 1 10 100 VR - Reverse Voltage ( V ) Figure 3. Reverse Current vs. Reverse Voltage Figure 4. Diode Capacitance vs. Reverse Voltage Dimensions in mm 96 12070 Document Number 85557 Rev. 3, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 3 (4) LL4148.LL4448 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 4 (4) Document Number 85557 Rev. 3, 01-Apr-99 |
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