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| MP6301 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1) MP6301 High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse Motor * * * * Small package by full molding (SIP 12 pin) High collector power dissipation (6 devices operation) : PT = 4.4 W (Ta = 25C) High collector current: IC (DC) = 3 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Industrial Applications Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (6 devices operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating NPN 100 80 8 3 5 0.5 2.0 PNP -100 -80 -8 -3 -5 -0.5 Unit V V V A A W JEDEC JEITA TOSHIBA 2-32C1F Weight: 3.9 g (typ.) PT Tj Tstg 4.4 150 -55 to 150 W C C Array Configuration 12 R1 R2 4 7 10 3 6 9 2 R1 R2 1 5 8 R1 4.5 k, R2 300 11 1 2002-11-20 MP6301 Thermal Characteristics Characteristics Thermal resistance of junction to ambient (6 devices operation, Ta = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 C Symbol Max Unit Rth (j-a) 28.4 C/W Electrical Characteristics (Ta = 25C) (NPN transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton Input Switching time Storage time tstg IB1 20 s Test Condition VCB = 100 V, IE = 0 A VCE = 80 V, IB = 0 A VEB = 8 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 10 mA, IB = 0 A VCE = 2 V, IC = 1 A VCE = 2 V, IC = 2 A IC = 2 A, IB = 4 mA IC = 2 mA, IB = 4 mA VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0 A, f = 1 MHz Min 0.8 100 80 2000 1000 Typ. 100 20 0.4 Max 20 20 4.0 1.8 2.3 Unit A A mA V V Saturation voltage V MHz pF Transition frequency Collector output capacitance Turn-on time IB1 IB2 Output 15 3.0 s Fall time tf IB1 = -IB2 = 4 mA, duty cycle 1% IB2 VCC = 30 V 0.6 Emitter-Collector Diode Ratings and Characteristics (Ta = 25C) Characteristics Forward current Surge current Forward voltage Reverse recovery time Reverse recovery charge Symbol IFM IFSM VF trr Qrr t = 1 s, 1 shot IF = 1 A, IB = 0 A IF = 3 A, VBE = -3 V, dIF/dt = -50 A/s Test Condition Min Typ. 1 5 Max 3 5 2.0 Unit A A V s C 2 2002-11-20 MP6301 Electrical Characteristics (Ta = 25C) (PNP transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton Input IB2 Switching time Storage time tstg Test Condition VCB = -100 V, IE = 0 A VCE = -80 V, IB = 0 A VEB = -8 V, IC = 0 A IC = -1 mA, IE = 0 A IC = -10 mA, IB = 0 A VCE = -2 V, IC = -1 A VCE = -2 V, IC = -2 A IC = -2 A, IB = -4 mA IC = -2 A, IB = -4 mA VCE = -2 V, IC = -0.5 A VCB = -10 V, IE = 0 A, f = 1 MHz Min -0.8 -100 -80 2000 1000 Typ. 50 30 Max -20 -20 -4.0 -1.8 -2.3 Unit A A mA V V Saturation voltage V MHz pF Transition frequency Collector output capacitance Turn-on time IB2 IB1 Output 15 0.4 IB1 1.8 s 20 s Fall time tf VCC = -30 V 0.4 -IB1 = IB2 = 4 mA, duty cycle 1% Emitter-Collector Diode Ratings and Characteristics (Ta = 25C) Characteristics Forward current Surge current Forward voltage Reverse recovery time Reverse recovery charge Symbol IFM IFSM VF trr Qrr t = 1 s, 1 shot IF = 1 A, IB = 0 A IF = 3 A, VBE = 3 V, dIF/dt = -50 A/s Test Condition Min Typ. 500 2.7 Max 3 5 2.0 Unit A A V s C 3 2002-11-20 MP6301 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 4 2002-11-20 |
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