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| DG201B/202B Vishay Siliconix Improved Quad CMOS Analog Switches FEATURES D D D D D D D D "22-V Supply Voltage Rating TTL and CMOS Compatible Logic Low On-Resistance--rDS(on): 45 W Low Leakage--ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching--tON: 120 ns Low Glitching--Q: 1 pC BENEFITS D D D D D D D Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Superior to DG201A/202 Space Savings (TSSOP) APPLICATIONS D D D D D D D Industrial Instrumentation Test Equipment Communications Systems Disk Drives Computer Peripherals Portable Instruments Sample-and-Hold Circuits DESCRIPTION The DG201B/202B analog switches are highly improved versions of the industry-standard DG201A/202. These devices are fabricated in Vishay Siliconix' proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. up to "22-V input signals, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply voltages in the off condition. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG201B and DG202B can handle The DG201B is a normally closed switch and the DG202B is a normally open switch. (See Truth Table.) FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG201B Dual-In-Line, SOIC and TSSOP IN1 D1 S1 V- GND S4 D4 IN4 IN2 D2 S2 V+ NC S3 D3 IN3 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 TRUTH TABLE Logic 0 1 DG201B ON OFF Logic "0" v 0.8 V Logic "1" w 2.4 V DG202B OFF ON Document Number: 70037 S-52433--Rev. G, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600 4-1 DG201B/202B Vishay Siliconix ORDERING INFORMATION Temp Range Package 16-Pin Plastic DIP Part Number DG201BDJ DG202BDJ DG201BDK DG202BDK DG201BDY DG202BDY DG201BDQ DG202BDQ DG201BAK 16-Pin CerDIP -40 to 85 C 40 85_C 16-Pin Narrow SOIC 16-Pin TSSOP -55 to 125 C 55 125_C 16-Pin CerDIP 16 Pi C DIP DG201BAK/883 DG202BAK DG202BAK/883 ABSOLUTE MAXIMUM RATINGS Voltages Referenced to V- V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (AK, DK Suffix) . . . . . . . . . . . . . . -65 to 150_C (DJ, DY, DQ Suffix) . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOIC and TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ 5V Reg Level Shift/ Drive INX V- V+ SX DX GND V- FIGURE 1. www.vishay.com S FaxBack 408-970-5600 4-2 Document Number: 70037 S-52433--Rev. G, 06-Sep-99 DG201B/202B Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Specified Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance rDS(on) Match Source Off Leakage Current VANALOG rDS(on) DrDS(on) IS(off) ID(off) ID(on) VS = "14 V, VD = #14 V VD = "14 V, VS = #14 V VS = VD = "14 V VD = "10 V, IS = 1 mA Full Room Full Room Room Full Room Full Room Full 45 2 "0.01 "0.01 "0.02 A Suffix -55 to 125_C D Suffix -40 to 85_C Symbol V+ = 15 V, V- = -15 V VIN = 2.4 V, 0.8 Vf Tempb Typc Mind Maxd Mind Maxd Unit -15 15 85 100 -15 15 85 100 V W -0.5 -20 -0.5 -20 -0.5 -40 0.5 20 0.5 20 0.5 40 -0.5 -5 0.5 5 0.5 5 0.5 10 nA A Drain Off Leakage Current -0.5 -5 -0.5 -10 Drain On Leakage Current Digital Control Input Voltage High Input Voltage Low Input Current Input Capacitance VINH VINL IINH or IINL CIN VINH or VINL Full Full Full Room 5 -1 2.4 0.8 1 2.4 0.8 -1 V mA pF 1 Dynamic Characteristics Turn-On Time Turn-Off Time tON tOFF Q CS(off) CD(off) CD(on) OIRR XTALK CL = 1000 pF, Vg = 0 V Rg = 0 W VS = 0 V, f = 1 MHz VD = VS = 0 V, f = 1 MHz CL = 15 pF, RL = 50 W VS = 1 VRMS, f = 100 kHz VS = 2 V S S it hi Ti See Switching Time T t Circuit Test Ci it Room Full Room Full Room Room Room Room Room Room 120 65 300 200 300 200 ns Charge Injection Source-Off Capacitance Drain-Off Capacitance Channel On Capacitance Off Isolation Channel-to-Channel Crosstalk 1 5 5 16 90 pC pF F dB 95 Power Supply Positive Supply Current Negative Supply Current Power Supply Range for Continuous Operation I+ VIN = 0 or 5 V I- VOP Room Full Room Full Full 100 -1 -5 "4.5 "22 50 100 -1 -5 "4.5 "22 50 mA V Document Number: 70037 S-52433--Rev. G, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600 4-3 DG201B/202B Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLYa Test Conditions Unless Specified Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) VD = 3 V, 8 V, IS = 1 mA Full Room Full 90 A Suffix -55 to 125_C D Suffix -40 to 85_C Symbol V+ = 12 V, V- = 0 V VIN = 2.4 V, 0.8 Vf Tempb Typc Mind Maxd Mind Maxd Unit 0 12 160 200 0 12 160 200 V W Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection tON tOFF Q VS = 8 V See Switching Time T t Circuit S S it hi Ti Test Ci it CL = 1 nF, Vgen= 6 V, Rgen = 0 W Room Room Room 120 60 4 300 200 300 200 ns pC Power Supply Positive Supply Current Negative Supply Current Power Supply Range for Continuous Operation I+ VIN = 0 or 5 V I- VOP Room Full Room Full Full 100 -1 -5 )4.5 )25 50 100 -1 -5 )4.5 )25 50 mA V Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. www.vishay.com S FaxBack 408-970-5600 4-4 Document Number: 70037 S-52433--Rev. G, 06-Sep-99 DG201B/202B Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. VD and Power Supply Voltages 110 100 90 80 r DS(on) ( W ) 70 60 50 40 30 20 10 -20 -16 -12 -8 -4 0 4 8 12 16 20 VD - Drain Voltage (V) "20 V "10 V "15 V "5 V r DS(on) ( W ) 100 90 80 70 60 50 40 30 20 10 0 -15 125_C 85_C 25_C -55_C V+ = 15 V V- = -15 V rDS(on) vs. VD and Temperature -10 -5 0 5 10 15 VD - Drain Voltage (V) rDS(on) vs. VD and Single Power Supply Voltages 250 225 200 175 r DS(on) ( W ) 150 125 10 V 100 75 50 25 0 0 2 4 6 8 10 12 14 16 VD - Drain Voltage (V) 0 12 V 15 V 0.5 V TH ( V ) 7V 1.5 V+ = 5 V 2 2.5 Input Switching Threshold vs. Supply Voltage 1 4 6 8 10 12 14 16 18 20 V+ Positive Supply (V) Leakage Currents vs. Analog Voltage 80 60 40 I S,I D - Current (pA) 20 0 -20 -40 -60 -80 -20 -15 -10 -5 0 5 Temperature (_C) 10 15 20 1 pA -55 IS(off), ID(off) I S, I D - Current 100 pA V+ = 22 V V- = -22 V TA = 25_C 1 nA Leakage Currents vs. Temperature V+ = 15 V V- = -15 V VS, VD = "14 V IS(off), ID(off) 10 pA ID(on) -35 -15 5 25 45 65 85 105 125 Temperature (_C) Document Number: 70037 S-52433--Rev. G, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600 4-5 DG201B/202B Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Time vs. Single Supply Voltage 500 V- = 0 V 400 300 Switching Time (ns) 300 Switching Time (ns) 400 Switching Time vs. Power Supply Voltage 200 200 ton 100 toff 0 2 4 6 8 10 12 14 16 18 20 V+ - Positive Supply (V) ton 100 toff 0 0 "4 "8 "12 "16 "20 V+, V- Positive and Negative Supplies (V) QS, QD - Charge Injection vs. Analog Voltage 30 120 110 100 Q - Charge (pC) 10 OIRR (dB) V+ = 15 V V- = -15 V V+ = 12 V V- = 0 V -10 60 -20 50 40 -10 -5 0 5 10 15 10 k 90 Off Isolation vs. Frequency V+ = 15 V V- = -15 V 20 RL = 50 W 80 70 0 -30 -15 100 k 1M 10 M VANALOG - Analog Voltage (V) f - Frequency (Hz) Supply Current vs. Switching Frequency 4 I+ - Supply Current (mA) 3 2 1 0 1k 10 k 100 k 1M f - Frequency (Hz) www.vishay.com S FaxBack 408-970-5600 4-6 Document Number: 70037 S-52433--Rev. G, 06-Sep-99 DG201B/202B Vishay Siliconix TEST CIRCUITS +15 V V+ VS = +2 V S IN 3V GND V- D VO RL 1 kW CL 35 pF Logic Input 3V 50% 0V tOFF 90% tr <20 ns tf <20 ns Switch Output -15 V VO = VS RL RL + rDS(on) VO tON FIGURE 2. Switching Time +15 V C +15 V C VS V+ V+ S1 Rg = 50 W IN1 0V, 2.4 V S2 NC GND V- C IN2 GND -15 V C = RF bypass VS VO VS VO -15 V V- C RL D2 D1 50 W VS Rg = 50 W 0V, 2.4 V S D VO IN RL VO 0V, 2.4 V Off Isolation = 20 log XTALK Isolation = 20 log FIGURE 3. Off Isolation FIGURE 4. Channel-to-Channel Crosstalk +15 V DVO Rg V+ S IN 3V GND V- DVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x DVO -15 V D VO CL 1000 pF INX ON OFF ON VO Vg FIGURE 5. Charge Injection Document Number: 70037 S-52433--Rev. G, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600 4-7 DG201B/202B Vishay Siliconix APPLICATIONS +15 V V+ Logic Input Low = Sample High = Hold 1 kW +15 V -15 V - LM101A VIN + 5 MW 5.1 MW V- 30 pF J202 +15 V 2N4400 50 pF 200 W 1000 pF J500 J507 -15 V VOUT DG201B Aquisition Time Aperature Time Sample to Hold Offset Droop Rate = 25 ms = 1 ms = 5 mV = 5 mV/s -15 V FIGURE 6. Sample-and-Hold +15 V 160 C4 fC4 Select fC3 Select TTL Control fC2 Select fC1 Select 150 pF C3 Voltage Gain - dB 1500 pF C2 0.015 mF C1 0.15 mF 80 fC1 40 fC2 fC3 fC4 V1 120 0 V- fL1 fL2 fL3 fL4 DG201B GND -40 1 10 100 1k 10 k 100 k 1M -15 V +15 V - R1 = 10 kW LM101A + R2 = 10 kW 30 pF R3 = 1 MW f - Frequency (Hz) R3 R1 -15 V VOUT AL (Voltage Gain Below Break Frequency) = 1 fC (Break Frequency) = 2pR3CX fL (Unity Gain Frequency) = rDS(on) Max Attenuation = = 100 (40 dB) 1 2pR1CX -47 dB 10 kW FIGURE 7. Active Low Pass Filter with Digitally Selected Break Frequency www.vishay.com S FaxBack 408-970-5600 4-8 Document Number: 70037 S-52433--Rev. G, 06-Sep-99 DG201B/202B Vishay Siliconix APPLICATIONS +5 V +15 V 30 pF VIN1 VL V+ +15 V + LM101A VIN2 - DG419 -15 V CH GND V- +15 V RF1 18 kW RF1 9.9 kW RF1 100 kW DG202B -15 V Gain 1 (x1) Gain 2 (x10) Gain 3 (x100) Gain 4 (x1000) V- Logic High = Switch On -15 V GND RG1 2 kW RG2 100 W RG3 100 W Gain = RF + RG RG FIGURE 8. A Precision Amplifier with Digitally Programable Input and Gains Document Number: 70037 S-52433--Rev. G, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600 4-9 |
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