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DATA SHEET
SILICON POWER TRANSISTOR
NEL2004F02-24
NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
DESCRIPTION AND APPLICATIONS
NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.
OUTLINE DIMENSIONS (Unit: mm)
2 2 0.2 3 0.2 2 0.2 2 x 3.2 0.3 1 1
5.85 0.2 2.58 0.3
FEATURES
* High Linear Power and Gain
4.2 0.4 0.1 +0.05 -0.02
1 1 3 3.6 0.5 3.6 0.5 12.4 0.2 9.2 0.2 4.6 0.2
* Low Internal Modulation Distortion * High Reliability Gold Metallization * Emitter Ballasting * 24 V Operation
1 - EMITTER 2 - BASE 3 - COLLECTOR
ABSOLUTE MAXIMUM RATING (TA = 25 C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector to Emitter Voltage Collector Current Power Dissipation Thermal Resistance Junction Temperature Storage Temperature SYMBOL VCBO VCER VEBO VCEO IC PT Rth(j-c) Tj Tstg R = 10 SPECIFIED CONDITION RATINGS 45 30 3 18 1.5 19.4 9 200 -65 to 150 UNIT V V V V A W C/W C C
Document No. P11582EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
(c)
2.4 0.2
6.1 0.3
1996
NEL2004F02-24
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER Collector to Emitter Cutoff Current Collector to Emitter Voltage (Base to Emitter Registor = 10 ) Collector to Emitter Voltage (Open Base) Collector to Base Voltage (Open Emitter) Emitter to Base Voltage (Open Collector) DC Forward Current Gain Output Capacitance SYMBOL ICES SPECIFIED CONDITION VCE = 24 V IC = 3 mA, R = 10 MIN. TYP. MAX. 3 UNIT mA
VCER
30
85
V
VCEO
IC = 3 mA
18
22
V
VCBO
IC = 3 mA
45
85
V
VEBO
IC = 8 mA
3
4.4
V
hFE Cob
VCE = 5 V, IC = 0.3 A VCE = 24 V, f = 1 MHz
30
100 6.2
150 pF
2
NEL2004F02-24
PERFORMANCE SPECIFICATIONS (TA = 25 C) CLASS AB OPERATION
PARAMETER Output Power SYMBOL PIdB SPECIFIED CONDITION f = 1.97 GHz, Iq = 40 mA, VCC = 24 V, CLASS AB f = 1.97 GHz, Pout = PIdB, Iq = 40 mA, VCC = 24 V, CLASS AB f = 1.97 GHz, Pin = 0.2 W, Iq = 40 mA, VCC = 24 V, CLASS AB f = 1.97 GHz, f = 100 kHz, 5 W PEP, VCC = 24 V, Iq = 40 mA, CLASS AB MIN. 5 TYP. 7 MAX. UNIT W
Collector Efficiency
c
GL
40
46
%
Linear Gain
9.5
dB
3rd Order Intermodulation
IM3
-34
dBc
CLASS A OPERATION
PARAMETER Output Power SYMBOL PIdB SPECIFIED CONDITION f = 1.97 GHz, Iq = 250 mA, VCC = 20 V, CLASS A f = 1.97 GHz, Pout = PIdB, Iq = 250 mA, VCC = 20 V, CLASS A f = 1.97 GHz, Pin = 0.01 W, Iq = 250 mA, VCC = 20 V, CLASS A f = 1.97 GHz, f = 100 kHz, 1 W PEP, VCC = 20 V, Iq = 250 mA, CLASS A MIN. TYP. 2 MAX. UNIT W
Collector Efficiency
c
GL
35
%
Linear Gain
12
dB
3rd Order Intermodulation
IM3
-37
dBc
3
NEL2004F02-24
Gain (dB) 13 12 11 10 9 8 f = 1970 MHz Class AB, Vcc = 24 V Iq = 40 mA Class A, Vcc = 20 V Iq = 250 mA
c (%)
50 40 30 20 1W 4W Pout (dBm) 20 24 28 32 36 38
-25
f1 = 1970 MHz f2 = 1970.1 MHz Class AB, Vcc = 24 V Iq = 40 mA
-30
IM3
Class A, Vcc = 20 V Iq = 250 mA
-35
-40 IM (dBc)
IM5
IM7
-45
-50
-55
-60 20 24 28 32 36 40 Pout (dBm) *** PEP
4
NEL2004F02-24
S-PARAMETER NEL2004 Class A VCC = 20 V, Icq = 0.25 A
FREQUENCY GHz 1.70 1.71 1.72 1.73 1.74 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.90 1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 MAG 0.70 0.69 0.69 0.69 0.69 0.69 0.69 0.69 0.69 0.69 0.69 0.69 0.69 0.70 0.69 0.70 0.70 0.70 0.70 0.70 0.71 0.71 0.71 0.71 0.72 0.72 0.73 0.73 0.73 0.74 0.74 S11 ANG (DEG) 171 171 172 172 172 173 173 173 173 174 174 175 175 175 175 175 176 176 176 177 177 177 177 178 178 178 178 178 179 179 179 MAG 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.04 0.04 0.05 0.05 0.05 0.04 0.04 0.04 0.04 0.04 0.04 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.02 S12 ANG (DEG) -26 -26 -27 -29 -30 -31 -31 -32 -33 -35 -37 -37 -38 -45 -49 -50 -46 -46 -47 -49 -50 -51 -52 -54 -55 -57 -58 -60 -61 -62 -64 S21 MAG 1.68 1.70 1.71 1.71 1.69 1.67 1.65 1.66 1.67 1.67 1.65 1.62 1.60 1.61 1.62 1.62 1.60 1.56 1.54 1.55 1.56 1.56 1.53 1.50 1.48 1.48 1.48 1.47 1.45 1.44 1.42 ANG (DEG) -16 -18 -19 -20 -22 -23 -24 -25 -26 -28 -30 -31 -32 -32 -34 -35 -38 -38 -39 -39 -41 -43 -46 -46 -47 -47 -49 -50 -52 -53 -54 MAG 0.77 0.78 0.79 0.79 0.80 0.81 0.81 0.82 0.83 0.84 0.84 0.85 0.85 0.86 0.87 0.87 0.88 0.89 0.89 0.90 0.90 0.91 0.92 0.92 0.92 0.93 0.93 0.94 0.94 0.94 0.95 S22 ANG (DEG) -149 -150 -150 -150 -150 -151 -151 -151 -152 -152 -152 -153 -153 -153 -154 -154 -155 -155 -156 -156 -157 -157 -158 -158 -159 -159 -160 -160 -161 -161 -162
NEL2004 Class AB VCC = 24 V, Icq = 0.04 A
FREQUENCY GHz 1.70 1.71 1.72 1.73 1.74 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.90 1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 MAG 0.75 0.75 0.75 0.75 0.74 0.74 0.74 0.73 0.73 0.73 0.73 0.73 0.73 0.73 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 S11 ANG (DEG) 167 167 167 167 167 167 168 168 168 168 168 169 169 169 169 169 169 170 170 170 170 170 171 171 171 172 172 172 173 173 173 MAG 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.02 0.02 0.02 0.02 S12 ANG (DEG) -26 -27 -28 -29 -30 -30 -30 -31 -33 -35 -36 -39 -41 -42 -42 -43 -45 -45 -46 -48 -50 -52 -52 -53 -54 -57 -59 -61 -62 -64 -66 S21 MAG 1.09 1.11 1.11 1.12 1.11 1.10 1.09 1.09 1.11 1.11 1.10 1.09 1.08 1.08 1.09 1.10 1.08 1.06 1.05 1.06 1.07 1.07 1.06 1.04 1.03 1.03 1.04 1.03 1.02 1.01 1.00 ANG (DEG) -25 -26 -28 -29 -31 -32 -33 -33 -34 -36 -39 -40 -41 -41 -42 -44 -46 -47 -48 -48 -50 -52 -54 -55 -56 -56 -58 -60 -61 -63 -64 MAG 0.87 0.87 0.88 0.88 0.88 0.89 0.89 0.89 0.90 0.90 0.91 0.91 0.91 0.92 0.92 0.92 0.93 0.93 0.94 0.94 0.94 0.94 0.95 0.95 0.95 0.95 0.96 0.96 0.96 0.96 0.97 S22 ANG (DEG) -148 -149 -149 -149 -149 -150 -150 -150 -151 -151 -152 -152 -152 -153 -153 -153 -154 -154 -155 -155 -155 -156 -156 -157 -157 -158 -158 -159 -159 -160 -160
5
NEL2004F02-24
NEL2004F02-24 Zin/Zout
1.0
0.9
0.8
1.2
0 .7
1.4
0.6
1.6
0.2
1.8
2.0
0.5
NT
ER EA C T + ANCE JX C Zo O M PO
NE
0.4
POS ITIV
1
4
0.6
0.1
4 3
0.2
Zout 21
EN T
ON MP
0.4
0.6
0. 8
1.
0
E NC TA AC -JX E E R Zo TIV
CO
0.3
0.5
0.6
0.7
0.8
0.9
ZO = 50 ohm
f [GHz] 1.80 1.90 1.97 2.00
Zin [ohm] 7.2 + j11 8.0 + j10 10.4 + j11 13.5 + j11
1.0
1.2
Zout Zin
6
1.4
Zout [ohm] 4.8 - j8.4 4.1 - j7.8 3.7 - j7.4 3.0 - j6.1
1.6
1.8
2.0
0.4
0.2
NE GA
0.
4
50
1: 1.8 GHz 2: 1.9 3: 1.97 RESISTANCE COMPONENT R 4: 2.0 0.2 Zo
0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.1
0.2
0.3
1.2
1.4
1.6
1.8 2.0
3.0
4.0
5.0
10
20
5.0
10 20
50
0
4.0
3.
0
1.0
0.8
0. 8
2
3
0 1.
0.6
0.4
0.2
0.
4
0.6
0.8
1.0
3.
0
0.3
0.2
4.0
5.0
Zin
10
20
0.1
50
NEL2004F02-24
Circuit Drawing
40 mm 40 mm
,,,,,, ,, , , , ,, , , , ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,, ,,,,,,,,,
1 Thru hole 1 mm x4 1 1 22 8 15
50 mm 7.6
3.3 1 3
1 3
2
28
6
1
1
6
14
3.3
1
6
15
13
121
input
output
SUBSTRATE DICLAD 522T(R) THICKNESS = 0.79 mm DOUBLE SIDE 35 m Cu r = 2.6
2.3
2
3.15
3 1
0.5 0.5
6
6
1
15
1 2
1
5
2
8
22
5
1
2
6
7
NEL2004F02-24
Components Layout
VBB D1 - R1 C2 R2 L1 C3
C4 VCC
C1
C5
input
output
R1: 5.1 R2: 30 L1: 5 mm 10T Coil
D1: VO6C C1, C2, C3, C5: MURATA 47 pF C4: 22 F, 50 V Electrolytic Capacitor
8
NEL2004F02-24
APPLICATION
= Amplifier Diagrams =
46 mW NEL2001 NEL2012 NEL2035
30 W
95 mW NEL2001 NEL2012
NEL2035 x 2
50 W
NEL2035 x 4 40 mW NEL2004 NEL2012 NEL2035 100 W
9
NEL2004F02-24
[MEMO]
10
NEL2004F02-24
[MEMO]
11
NEL2004F02-24
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5

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