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| BTS 452 T Smart Power High-Side-Switch Features * Overload protection * Current limitation * Short circuit protection * Thermal shutdown with restart * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection with external resistor * CMOS compatible input * Loss of GND and loss of Vbb protection * ESD - Protection * Very low standby current Product Summary Overvoltage protection Operating voltage On-state resistance Nominal load current Vbb(AZ) Vbb(on) RON IL(ISO) 62 200 1.8 V m A 6...52 V P-TO252-5-11 Application * All types of resistive, inductive and capacitive loads * C compatible power switch for 12 V, 24 V and 42 V DC applications * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Page 1 2004-01-27 BTS 452 T Block Diagram + V bb Voltage source V Logic Overvoltage protection Current limit Gate protection Charge pump Level shifter Rectifier IN Limit for unclamped ind. loads OUT Temperature sensor Load ESD Logic GND miniPROFET Signal GND Load GND Pin 1 2 3 4 5 TAB Symbol GND IN Vbb NC OUT Vbb Function Logic ground Input, activates the power switch in case of logic high signal Positive power supply voltage not connected Output to the load Positive power supply voltage Pin configuration Top view Tab = VBB 1 2 (3) 4 5 GND IN NC OUT Page 2 2004-01-27 BTS 452 T Maximum Ratings at Tj = 25C, unless otherwise specified Parameter Supply voltage Supply voltage for full short circuit protection Continuous input voltage Load current (Short - circuit current, see page 5) Current through input pin (DC) Operating temperature Storage temperature Power dissipation 1) Inductive load switch-off energy dissipation 1)2) single pulse, (see page 8) Tj =150 C, IL = 1 A Load dump protection 2) VLoadDump3)= VA + VS RI=2, td=400ms, VIN= low or high, VA=13,5V RL = 13.5 RL = 27 Electrostatic discharge voltage (Human Body Model) VESD according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin all other pins Thermal Characteristics junction - case: Thermal resistance @ min. footprint Thermal resistance @ 6 cm 2 cooling area 1) RthJC Rth(JA) Rth(JA) 80 45 3 60 K/W K/W 1 5 73.5 88.5 kV VLoaddump V Symbol Vbb Vbb(SC) VIN IL I IN Tj T stg Ptot EAS Value 52 50 -10 ... +16 self limited 5 -40 ...+150 -55 ... +150 41.6 150 W mJ A mA C Unit V 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. (see page 16) 2not subject to production test, specified by design 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than V bb(AZ) require an external current limit for the GND pin, e.g. with a 150 resistor in GND connection. A resistor for the protection of the input is integrated. Page 3 2004-01-27 BTS 452 T Electrical Characteristics Parameter and Conditions at Tj = -40...150C, Vbb = 12..42V, unless otherwise specified Load Switching Capabilities and Characteristics On-state resistance Tj = 25 C, IL = 1 A, V bb = 9...52 V Tj = 150 C Nominal load current; Device on PCB 1) TC = 85 C, VON = 0.5 V Turn-on time RL = 47 Turn-off time RL = 47 Slew rate on Slew rate off 10 to 30% VOUT , 70 to 40% V OUT, dV/dt on -dV/dt off 0.7 0.9 2 2 V/s RL = 47 , V bb = 13.5 V RL = 47 , V bb = 13.5 V Operating Parameters Operating voltage Undervoltage shutdown of charge pump Tj = -40...+85 C Tj = 150 C Undervoltage restart of charge pump Standby current Tj = -40...+85 C, VIN = low Tj = +150 C2) , VIN = low Leakage output current (included in Ibb(off)) VIN = low Operating current VIN = high 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. (see page 16) 2higher current due temperature sensor Symbol min. RON I L(ISO) t on t off 1.8 - Values typ. max. Unit m 150 270 2.2 80 80 200 380 180 200 A s to 90% VOUT to 10% VOUT Vbb(on) Vbb(under) 6 - 4 0.8 52 4 5.5 5.5 V Vbb(u cp) Ibb(off) - A 15 18 5 2 mA IL(off) IGND - Page 4 2004-01-27 BTS 452 T Electrical Characteristics Parameter and Conditions at Tj = -40...150C, Vbb = 12..42V, unless otherwise specified Protection Functions1) Initial peak short circuit current limit (pin 3 to 5) Tj = -40 C, Vbb = 20 V, tm = 150 s Tj = 25 C Tj = 150 C Tj = -40...+150 C, Vbb > 40 V , ( see page 11 ) Repetitive short circuit current limit Tj = Tjt (see timing diagrams) Vbb < 40 V Vbb > 40 V Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), Ibb = 4 mA Overvoltage protection 3) Ibb = 4 mA Thermal overload trip temperature Thermal hysteresis Reverse Battery Reverse battery 4) Drain-source diode voltage (VOUT > Vbb) Tj = 150 C -Vbb -VON 600 52 V mV T jt Tjt 150 10 C K Vbb(AZ) 62 VON(CL) I L(SCr) 59 6 4.5 63 V I L(SCp) 4 6.5 5 2) 9 A Symbol min. Values typ. max. Unit 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation . 2not subject to production test, specified by design 3 see also VON(CL) in circuit diagram on page 7 4Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input current has to be limited (see max. ratings page 3). Page 5 2004-01-27 BTS 452 T Parameter and Conditions at Tj = -40...150C, Vbb = 12..42V, unless otherwise specified Input Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current VIN = 0.7 V On state input current VIN = 5 V Input resistance (see page 7) RI 2 3.5 5 k I IN(on) 3 25 VIN(T+) VIN(T-) V IN(T) I IN(off) 0.8 1 0.4 2.2 25 A V Symbol min. Values typ. max. Unit Page 6 2004-01-27 BTS 452 T Terms Ibb V Z V ON Inductive and overvoltage output clamp + V bb Vbb I IN IN V V bb PROFET OUT OUT GND IL VON IN R GND IGND GND VOUT V ON clamped to 59V min. Input circuit (ESD protection) R IN I Overvoltage protection of logic part + V bb V Z2 ESD- ZD I GND I I IN RI L o gic V Z1 The use of ESD zener diodes as voltage clamp at DC conditions is not recommended GND R GN D S ignal GND Reverse battery protection - V bb VZ1 =6.1V typ., VZ2 =Vbb(AZ) =62V min., RI=3.5 k typ., RGND=150 Logic IN RI OUT Power Inverse Diode Internal output pull down V bb GND R GND Signal GND Power GND RL V OUT RGND=150, RI=3.5k typ., Temperature protection is not active during inverse current S ignal G N D R O RO = 200 k typ. Page 7 2004-01-27 BTS 452 T GND disconnect Vbb disconnect with charged inductive load Vbb IN PROFET OUT Vbb high IN PROFET OUT GND V bb V IN V GND GND V bb GND disconnect with GND pull up Vbb IN PROFET OUT Inductive Load switch-off energy dissipation E bb E AS Vbb E Load GND V bb V IN V GND = IN PROFET OUT GND ZL { R L L EL ER Energy stored in load inductance: EL = 1/2 * L * IL2 While demagnetizing load inductance, the energy dissipated in PROFET is EAS = Ebb + EL - ER = VON(CL) * iL(t) dt, with an approximate solution for RL > 0: E AS = IL * R L IL * L ) * ( V b b + | V O U T ( C L )| ) * ln (1 + | V O U T ( C L )| 2 * RL Page 8 2004-01-27 BTS 452 T Typ. transient thermal impedance ZthJA=f(tp) @ 6cm 2 heatsink area Parameter: D=tp/T 10 2 Typ. transient thermal impedance Z thJA=f(tp) @ min. footprint Parameter: D=tp/T 10 2 K/W D=0.5 D=0.2 K/W D=0.5 D=0.2 10 1 10 1 D=0.1 D=0.05 D=0.02 D=0.05 D=0.02 D=0.01 Z thJA ZthJA D=0.1 10 0 10 0 D=0.01 10 -1 D=0 10 -1 D=0 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10 s 10 4 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10 tp s 10 4 tp Typ. on-state resistance RON = f(Tj) ; Vbb = 13,5V ; Vin = high 300 Typ. on-state resistance RON = f(V bb); IL = 1 A ; Vin = high 400 m m 150C 300 RON 200 RON 250 150 200 25C -40C 150 100 100 50 50 0 -40 -20 0 20 40 60 80 100 120 C Tj 160 0 0 5 10 15 20 25 30 35 40 V Vbb 50 Page 9 2004-01-27 BTS 452 T Typ. turn on time ton = f(Tj ); RL = 47 160 Typ. turn off time toff = f(Tj); RL = 47 160 s 9V s 120 120 t on toff 100 13.5V 100 9...42V 80 42V 80 60 60 40 40 20 20 0 -40 -20 0 20 40 60 80 100 120 C Tj 160 0 -40 -20 0 20 40 60 80 100 120 C Tj 160 Typ. slew rate on dV/dton = f(T j) ; RL = 47 2 Typ. slew rate off dV/dtoff = f(Tj); R L = 47 3.5 V/s 1.6 V/s dV dton -dV dtoff 42V 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -40 -20 13.5V 9V 2.5 2 1.5 42V 1 0.5 13.5V 9V 0 20 40 60 80 100 120 C Tj 160 0 -40 -20 0 20 40 60 80 100 120 C Tj 160 Page 10 2004-01-27 BTS 452 T Typ. standby current Ibb(off) = f(Tj ) ; Vbb = 42V ; VIN = low 10 Typ. leakage current I L(off) = f(Tj) ; Vbb = 42V ; VIN = low 2.5 A A I bb(off) 6 I L(off) 0 20 40 60 80 100 120 160 1.5 4 1 2 0.5 0 -40 -20 C Tj 0 -40 -20 0 20 40 60 80 100 120 C Tj 160 Typ. initial peak short circuit current limit IL(SCp) = f(Vbb) 10 Typ. initial short circuit shutdown time toff(SC) = f(Tj,start) ; Vbb = 20V 6 A IL(SCp) ms -40C 25C toff(SC) 30 40 60 4 6 150C 3 4 2 2 1 0 0 10 20 V Vbb 0 -40 -20 0 20 40 60 80 100 120 C Tj 160 Page 11 2004-01-27 BTS 452 T Typ. input current IIN(on/off) = f(Tj); Vbb = 13,5V; VIN = low/high VINlow 0,7V; VINhigh = 5V 12 50 Typ. input current I IN = f(VIN); V bb = 13.5V A A -40...25C 150C IIN IIN on off 8 30 6 20 4 10 2 0 -40 -20 0 20 40 60 80 100 120 C Tj 160 0 0 1 2 3 4 5 6 V VIN 8 Typ. input threshold voltage VIN(th) = f(Tj ) ; Vbb = 13,5V 2 Typ. input threshold voltage VIN(th) = f(V bb) ; Tj = 25C 2 V on V on 1.6 1.6 V IN(th) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -40 -20 V IN(th) off 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 off 0 20 40 60 80 100 120 C Tj 160 10 20 30 V Vbb 50 Page 12 2004-01-27 BTS 452 T Maximum allowable load inductance for a single switch off L = f(IL); Tjstart =150C, RL=0 4500 13.5V Maximum allowable inductive switch-off energy, single pulse EAS = f(I L); T jstart = 150C, Vbb = 13,5V 1200 mH mJ 3500 L 2500 42V EAS 0.25 0.5 0.75 1 1.25 1.5 2 3000 800 600 2000 1500 1000 200 500 0 0 0 0 400 A IL 0.25 0.5 0.75 1 1.25 1.5 A IL 2 Page 13 2004-01-27 BTS 452 T Timing diagrams Figure 1a: Vbb turn on: Figure 2b: Switching a lamp, IN IN V bb OUT V I OUT L t t Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition IN Figure 2c: Switching an inductive load IN V OUT 90% t on d V /d to n 10% t d V /d to f f V OUT o ff IL I L t t Page 14 2004-01-27 BTS 452 T Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling IN Figure 5: Undervoltage restart of charge pump Vo n t I L I L(SCp) V b b( u c p ) I L(SCr) V b ( u n d er ) b tm t off(SC) t Vbb Heating up of the chip may require several milliseconds, depending on external conditions. Figure 4: Overtemperature: Reset if Tj < T jt IN V OUT T J t Page 15 2004-01-27 BTS 452 T Package and ordering code all dimensions in mm Package: P-TO252-5-11 6.5 +0.15 -0.05 5.7 MAX. 1) Ordering code: Q67060-S7406 A B 2.3 +0.05 -0.10 0.5 +0.08 -0.04 (4.24) 1 0.1 (5) 9.98 0.5 6.22 -0.2 0.8 0.15 0.9 +0.20 -0.01 0...0.15 0.15 MAX. per side 0.51 MIN. 5 x 0.6 0.1 1.14 0.5 +0.08 -0.04 0.1 B 4.56 0.25 M AB 1) Includes mold flashes on each side. All metal surfaces tin plated, except area of cut. Printed circuit board (FR4, 1.5mm thick, one layer 70m, 6cm2 active heatsink area ) as a reference for max. power dissipation Ptot nominal load current IL(nom) and thermal resistance R thja Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 16 2004-01-27 |
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