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BAT66... Silicon Schottky Diode Power rectifier diode For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purpose BAT66-05 4 D1 D2 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT66-05 Parameter Package SOT223 Configuration common cathode Symbol VR IF Value Marking BAT66-05 Unit Maximum Ratings at TA = 25C, unless otherwise specified Diode reverse voltage Forward current Average forward current (50/60Hz, sinus) Total power dissipation Junction temperature Storage temperature Thermal Resistance Parameter TS 30 2 10 1 1.2 150 -55 ... 150 Value V A 126C Tj Tstg Symbol RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Junction - soldering point1) Surge forward current, (t 10ms) IFSM IFAV Ptot W C Unit 20 K/W Feb-14-2003 BAT66... Electrical Characteristics at T A = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Reverse current VR = 25 V VR = 25 V, TA = 85 C Forward voltage I F = 10 mA I F = 100 mA IF = 1 A VF 0.28 0.35 0.47 0.35 0.6 IR 10 1000 V Unit A AC Characteristics Diode capacitance VR = 10 V, f = 1 MHz CT - 30 40 pF 2 Feb-14-2003 BAT66... Reverse current IR = TA = Parameter 10 4 BAT 66-05 EHB00063 10 3 BAT 66-05 R A 10 3 TA = 125 C R mA 10 2 10 2 85 C 10 1 10 1 10 0 TA = 25 C 85 C 10 0 25 C 10 -1 0 10 20 V 30 10 -1 0 0.25 VR 2400 mA 1600 IF 1200 800 400 0 0 15 30 45 60 Forward current IF = (TS ) 75 90 105 120 C 150 TS 3 (VR) Forward current IF = (VF) EHB00062 0.5 V 0.75 VF Feb-14-2003 |
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