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(R) MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP31B/C AND TIP32B/C 3 1 APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tc = 25 C Storage T emperature Max. O perating Junction Temperature o Value MJD31B MJD32B 80 80 5 3 5 1 15 -65 to 150 150 MJD31C MJD32C 100 100 Uni t V V V A A A W o o C C For PNP types the values are intented negative. May 1999 1/5 MJD31B/31C - MJD32B/32C THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO V CEO(sus) Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitt er Voltage DC Current Gain Dynamic Current G ain Test Cond ition s V CE = Max Rating V CE = 60 V V EB = 5 V I C = 30 mA for MJD31B/32B for MJD31C/32C IC = 3 A IC = 3 A IC = 1 A IC = 3 A I C = 0.5 A I C = 0.5 A IB = 375 mA V CE = 4 V V CE = 4 V V CE = 4 V V CE = 10 V V CE = 10 V f = 1 KHz f = 1 MHz 25 10 20 3 Min. Typ . Max. 20 50 0.1 Un it A A mA 80 100 1.2 1.8 50 V V V V V CE(sat ) V BE(on) h F E h fe Pulsed: Pulse duration = 300 s, duty cycle 2 % For PNP type voltage and current values are negative. Safe Operating Area Derating Curves 2/5 MJD31B/31C - MJD32B/32C DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Collector-Base Capacitance (PNP type) 3/5 MJD31B/31C - MJD32B/32C TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 4/5 MJD31B/31C - MJD32B/32C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 5/5 |
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