View L6387D_87035.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

(R)
L6387
HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
HIGH VOLTAGE RAIL UP TO 600 V dV/dt IMMUNITY +- 50 V/nsec IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 400 mA SOURCE, 650 mA SINK SWITCHING TIMES 50/30 nsec RISE/FALL WITH 1nF LOAD CMOS/TTL SCHMITT TRIGGER INPUTS WITH HYSTERESIS AND PULL DOWN INTERNAL BOOTSTRAP DIODE OUTPUTS IN PHASE WITH INPUTS DESCRIPTION The L6387 is an high-voltage device, manufactured with the BCD"OFF-LINE" technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or BLOCK DIAGRAM
SO8
Minidip ORDERING NUMBERS:
L6387D
L6387
IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.
BOOTSTRAP DRIVER
8
Vboot H.V. Cboot
VCC
3
UV DETECTION R
HVG DRIVER S VCC 7
HVG
HIN
2
LOGIC
LEVEL SHIFTER
OUT 6 5 LVG DRIVER LVG TO LOAD
LIN
1
4
GND
D00IN1135
May 2001
1/9
L6387
ABSOLUTE MAXIMUM RATINGS
Symbol Vout Vcc Vboot Vhvg Vlvg Vi dVout/dt Ptot Tj Ts Output Voltage Supply Voltage Floating Supply Voltage Upper Gate Output Voltage Lower Gate Output Voltage Logic Input Voltage Allowed Output Slew Rate Total Power Dissipation (Tj = 85 C) Junction Temperature Storage Temperature Parameter Value -3 to Vboot - 18 - 0.3 to +18 - 1 to 618 - 1 to Vboot -0.3 to Vcc +0.3 -0.3 to Vcc +0.3 50 750 150 -50 to 150 Unit V V V V V V V/ns mW C C
Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900V (Human Body Model)
PIN CONNECTION
LIN HIN Vcc GND
1 2 3 4
D97IN517
8 7 6 5
Vboot HVG OUT LVG
THERMAL DATA
Symbol Rth j-amb Parameter Thermal Resistance Junction to Ambient SO8 150 Minidip 100 Unit C/W
PIN DESCRIPTION
N. 1 2 3 4 5 6 7 8 Name LIN HIN Vcc GND LVG (*) VOUT HVG (*) Vboot Type I I I O O O Lower Driver Logic Input Upper Driver Logic Input Low Voltage Power Supply Ground Low Side Driver Output Upper Driver Floating Reference High Side Driver Output Bootstrap Supply Voltage Function
(*) The circuit guarantees 0.3V maximum on the pin (@ Isink = 10mA). This allows to omit the "bleeder" resistor connected between the gate and the source of the external MOSFET normally used to hold the pin low.
2/9
L6387
RECOMMENDED OPERATING CONDITIONS
Symbol Vout VbootVout fsw Vcc Tj Pin 6 8 Parameter Output Voltage Floating Supply Voltage Switching Frequency Supply Voltage Junction Temperature HVG,LVG load CL = 1nF -45 Test Condition Min. Note 1 Note 1 Typ. Max. 580 17 400 17 125 Unit V V kHz V C
2
Note 1: If the condition Vboot - Vout < 18V is guaranteed, Vout can range from -3 to 580V.
ELECTRICAL CHARACTERISTICS AC Operation (Vcc = 15V; Tj = 25C)
Symbol ton toff tr tf Pin 1 vs 7 2 vs 5 7,5 7,5 Parameter High/Low Side Driver Turn-On Propagation Delay High/Low Side Driver Turn-Off Propagation Delay Rise Time Fall Time Test Condition Vout = 0V Vout = 600V CL = 1000pF CL = 1000pF Min. Typ. 110 105 50 30 Max. Unit ns ns ns ns
DC OPERATION (Vcc = 15V; Tj = 25C)
Symbol Vcc Vccth1 Vccth2 Vcchys Iqccu Iqcc Rdson VBS 8 Pin 3 Parameter Supply Voltage Vcc UV Turn On Threshold Vcc UV Turn Off Threshold Vcc UV Hysteresis Undervoltage Quiescent Supply Current Quiescent Current Bootstrap Driver on Resistance (*) Bootstrap Supply Voltage HVG ON VS = VB = 600V VIN = Vih (tp < 10s) VIN = Vil (tp < 10s) 300 450 400 650 1.5 3.6 VIN = 15V VIN = 0V 50 70 1 Vcc 9V Vcc = 15V Vcc 12.5V Test Condition Min. Typ. Max. 17 6.5 6 220 320 Unit V V V V A A V A A mA mA V V A A Low Supply Voltage Section 5.5 5 6 5.5 0.5 150 250 125
Bootstrapped supply Voltage Section 17 200 10 IQBS VBS Quiescent Current ILK High Voltage Leakage Current High/Low Side Driver Iso 5,7 Source Short Circuit Current Sink Short Circuit Current Low Level Logic Threshold Voltage High Level Logic Threshold Voltage High Level Logic Input Current Low Level Logic Input Current Isi Logic Inputs Vil Vih Iih Iil 2,3
(*) RDSON is tested in the following way: RDSON =
(VCC - VCBOOT1) - (VCC - VCBOOT2) I1(VCC,VCBOOT1) - I2(VCC,VCBOOT2)
where I1 is pin 8 current when VCBOOT = VCBOOT1, I2 when VCBOOT = VCBOOT2.
3/9
L6387
Figure 1. Typical Rise and Fall Times vs. Load Capacitance
time (nsec) 250 200 Tr 150 Tf 100 50 0
D99IN1054
Figure 2. Quiescent Current vs. Supply Voltage
Iq (A) 104
D99IN1055
103
102
10
0 1 2 3 4 5 C (nF) For both high and low side buffers @25C Tamb
0
2
4
6
8
10
12
14
16 VS(V)
Input Logic L6387 Input Logic is VCC (17V) compatible. An interlocking features is offered (see truth table below) to avoid undesired simultaneous turn ON of both Power Switches driven. Table 1.
Input Output HIN LIN HVG LVG 0 0 0 0 0 1 0 1 1 0 1 0 1 1 0 0
CEXT =
Qgate Vgate
The ratio between the capacitors CEXT and CBOOT is proportional to the cyclical voltage loss . It has to be: CBOOT>>>CEXT e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would be 300mV. If HVG has to be supplied for a long time, the CBOOT selection has to take into account also the leakage losses. e.g.: HVG steady state consumption is lower than 200A, so if HVG TON is 5ms, CBOOT has to supply 1C to CEXT. This charge on a 1F capacitor means a voltage drop of 1V. The internal bootstrap driver gives great advantages: the external fast recovery diode can be avoided (it usually has great leakage current). This structure can work only if VOUT is close to GND (or lower) and in the meanwhile the LVG is on. The charging time (Tcharge ) of the CBOOT is the time in which both conditions are fulfilled and it has to be long enough to charge the capacitor. The bootstrap driver introduces a voltage drop due to the DMOS RDSON (typical value: 125 Ohm). At low frequency this drop can be neglected. Anyway increasing the frequency it must be taken in to account. The following equation is useful to compute the
BOOTSTRAP DRIVER A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode (fig. 3a). In the L6387 a patented integrated structure replaces the external diode. It is realized by a high voltage DMOS, driven synchronously with the low side driver (LVG), with in series a diode, as shown in fig. 3b An internal charge pump (fig. 3b) provides the DMOS driving voltage . The diode connected in series to the DMOS has been added to avoid undesirable turn on of it. CBOOT selection and charging: To choose the proper CBOOT value the external MOS can be seen as an equivalent capacitor. This capacitor CEXT is related to the MOS total gate charge :
4/9
L6387
drop on the bootstrap DMOS: Vdrop = IchargeRdson Vdrop = Qgate Rdson Tcharge DMOS is about 1V, if the Tcharge is 5s. In fact: Vdrop = 30nC 125 ~ 0.8V 5s
where Qgate is the gate charge of the external power MOS, Rdson is the on resistance of the bootstrap DMOS, and Tcharge is the charging time of the bootstrap capacitor. For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap Figure 3. Bootstrap Driver.
Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop is too high, or the circuit topology doesn't allow a sufficient charging time, an external diode can be used.
DBOOT
VS
VBOOT H.V. HVG
VS
VBOOT H.V. HVG
CBOOT VOUT TO LOAD
CBOOT VOUT TO LOAD
LVG
LVG
a
b
D99IN1056
Figure 4. Turn On Time vs. Temperature
250
Figure 5. Turn Off Time vs. Temperature
250
@ Vcc = 15V
200 Ton (ns)
@ Vcc = 15V
200 Toff (ns) 150
Typ.
150
Typ.
100 50 0 -45 -25 0 25 50 Tj (C) 75 100 125
100 50 0 -45 -25 0 25 50 Tj (C) 75 100 125
5/9
L6387
Figure 6. Output Source Current vs. Temperature
1000
Figure 7. Output Sink Current vs. Temperature
1000
@ Vcc = 15V
800 current (mA) 600
Typ. current (mA) 800 600 400 200 0
@ Vcc = 15V
Typ.
400 200 0 -45 -25 0 25 50 Tj (C) 75 100 125
-45
-25
0
25 50 Tj (C)
75
100
125
6/9
L6387
DIM. MIN. A a1 B b b1 D E e e3 e4 F I L Z 3.18 7.95 0.51 1.15 0.356 0.204
mm TYP. 3.32 0.020 1.65 0.55 0.304 10.92 9.75 2.54 7.62 7.62 6.6 5.08 3.81 1.52 0.125 0.313 0.045 0.014 0.008 MAX. MIN.
inch TYP. 0.131 MAX.
OUTLINE AND MECHANICAL DATA
0.065 0.022 0.012 0.430 0.384 0.100 0.300 0.300 0.260 0.200 0.150 0.060
Minidip
7/9
L6387
DIM. MIN. A a1 a2 a3 b b1 C c1 D (1) E e e3 F (1) L M S 3.8 0.4 4.8 5.8 0.65 0.35 0.19 0.25 0.1
mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 0.026 0.014 0.007 0.010 0.004 MIN.
inch TYP. MAX. 0.069 0.010 0.065 0.033 0.019 0.010 0.020
OUTLINE AND MECHANICAL DATA
45 (typ.) 5.0 6.2 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.15 0.016 0.189 0.228 0.050 0.150 0.157 0.050 0.024 0.197 0.244
SO8
(1) D and F do not include mold flash or protrusions. Mold flash or potrusions shall not exceed 0.15mm (.006inch).
8/9
L6387
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
9/9

▲Up To Search▲

Price & Availability of L6387D

	To Download L6387D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .