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| 2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 !Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. !External dimensions (Units : mm) 2SD1760 1.50.3 6.50.2 5.1 +0.2 -0.1 C0.5 2.3 +0.2 -0.1 0.50.1 2SD1864 6.80.2 2.50.2 5.5 +0.3 -0.1 9.50.5 0.9 1.5 !Structure Epitaxial planar type NPN silicon transistor 0.9 0.550.1 2.30.2 2.30.2 1.00.2 (1) (2) (3) 0.50.1 2.54 2.54 (1) (2) (3) 1.05 14.50.5 0.75 0.650.1 2.5 0.65Max. 1.0 4.40.2 0.9 0.450.1 ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ROHM : ATV (1) Emitter (2) Collector (3) Base !Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SD1760 2SD1864 Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 60 50 5 3 4.5 15 1 150 -55~+150 Unit V V V A (DC) A (Pulse) *1 W (Tc =25C)*2 W C C Junction temperature Storage temperature *1 Single pulse, PW = 100ms *2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. 2SD1760 / 2SD1864 Transistors !Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Cob Min. 60 50 5 82 Typ. 0.5 90 40 Max. 1 1 1 390 Unit V V V A A V MHz pF IC = 50A IC = 1mA IE = 50A VCB = 40V VEB = 4V IC/IB = 2A/0.2A VCE = 3V, IC = 0.5A VCE = 5V, IE = -500mA, f = 30MHz VCB = 10V, IE = 0A, f = 1MHz Conditions * * * * Measured using pulse current. !Packaging specifications and hFE Package Code Type 2SD1760 2SD1864 hFE PQR PQR Basic ordering unit (pieces) TL 2500 Taping TV2 2500 - hFE values are classified as follows: Item hFE P 82~180 Q 120~270 R 180~390 !Electrical characteristic curves 10 5 3.0 VCE = 3V COLLECTOR CURRENT : IC (A) Ta = 25C 45mA 50mA COLLECTOR CURRENT : IC (A) 2.5 2.0 COLLECTOR CURRENT : IC (A) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 BASE TO EMITTER VOLTAGE : VBE (V) Ta = 100C 25C -25C 40mA 35mA 30mA 25mA 20mA 3.0 2.5 2.0 1.5 20mA 15mA 50mA 45mA 40mA 35mA 30mA 25mA Ta = 25C 15mA 1.5 10mA 10mA 1.0 0.5 0 0 5mA 1.0 IB = 5mA 0.5 0 0 PC = 15W IB = 0mA 1 2 3 4 5 10 20 30 40 50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics 1000 500 DC CURRENT GAIN : hFE Fig.2 Grounded emitter output characteristics ( ) 1000 500 DC CURRENT GAIN : hFE Fig.3 Grounded-emitter output characteristics( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta = 25C 10 Ta = 25C 5 2 1 0.5 0.2 IC/IB = 50 0.1 0.05 0.02 0.01 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 20 10 VCE = 3V 200 100 50 20 10 5 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 VCE = 5V 200 100 50 20 10 5 2 Ta = 100C 3V 25C -25C 2 5 10 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current( ) Fig.5 DC current gain vs. collector curren( ) Fig.6 Collector-emitter saturation voltage vs. collector current 2SD1760 / 2SD1864 Transistors COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASE SATURATION VOLTAGE : VBE (sat) (V) 5 2 1 0.5 0.2 0.1 0.05 0.02 VCE (sat) 1 2 5 10 Ta = 100C -25C 25C Ta = -25C VBE (sat) 25C 100C TRANSITION FREQUENCY : fT (MHz) lC/lB = 10 500 200 100 50 20 10 5 2 1 1 2 5 10 20 Ta = 25C VCE = 5V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 10 1000 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Ta = 25C f = 1MHz IE = 0A 0.01 0.01 0.02 0.05 0.1 0.2 0.5 50 100 200 5001000 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : -IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage TRANSIENT THERMAL RESISTANCE : Rth (C/W) 5 PW COLLECTOR CURRENT : IC (A) 5 COLLECTOR CURRENT : IC (A) 2 PW VCE=5v IC=0.2A 100 Pw =1 Pw 2 1 DC =1 c Se 0m Sec m 00 =1 0m 1 0.5 DC 0.2 0.1 0.05 0.02 Ta = 25C Single pulse 0.01 * 0.1 0.2 0.5 1 =1 00 s* ms * 0.5 0.2 0.1 0.05 Ta=25C Single nonrepetitive 0.02 pulse 0.2 0.5 1 10 1 2 5 10 20 50 100 0.1 1 10 100 1Sec 10Sec 100Sec 2 5 10 20 50 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) TIME : T (ms) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SD1760) Fig.11 Transient thermal resistance (2SD1760) Fig.12 Safe operating area (2SD1864) TRANSIENT THERMAL RESISTANCE : Rth (C/W) 100 10 1 0.1 1 10 100 1 10Sec 100Sec1000Sec TIME : T (ms) Fig.13 Transient thermal resistance (2SD1864) |
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