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| Switching Diodes MA3S133 Silicon epitaxial planar type Unit : mm For switching circuits I Features * Super-small SS-mini type package contained two elements, allowing high-density mounting * Two diodes are connected in series in the package 1.60 - 0.03 0.80 0.80 0.51 0.51 0.28 0.05 0.80 1.60 0.1 0.80 0.05 1 + 0.05 3 2 0.28 0.05 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature Single Series Single Series Tj Tstg IFM Symbol VR VRM IF Rating 80 80 100 65 200 130 150 -55 to +150 C C mA Unit V V mA 0.60 - 0.03 + 0.05 0.44 0.44 + 0.05 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 SS-Mini Type Package (3-pin) 0.88 - 0.03 Marking Symbol: MP Internal Connection 1 3 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance time*3 Symbol IR VF VR C t* 1 C t* 2 Reverse recovery trr *1 Conditions VR = 75 V IF = 100 mA IR = 100 A VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 Min Typ Max 100 1.2 0.12 - 0.02 + 0.05 0.28 0.05 Unit nA V V 80 5.5 3.0 150 9 pF pF ns ns trr*2 Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 2 and 3 *2 : Between pins 1 and 3 Bias Application Unit N-50BU tr 10% tp *3 : trr measuring circuit Input Pulse t IF trr t Irr = 0.1 * IR IF = 10 mA VR = 6 V RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1 MA3S133 IF V F 1 000 Between pins 1 and 3 10 000 Between pins 2 and 3 Switching Diodes IF V F 1 000 IR V R Between pins 2 and 3 Between pins 1 and 3 Ta = 150C 100 1 000 100 Forward current IF (mA) Forward current IF (mA) Reverse current IR (nA) 100C 10 Ta = 150C 10 100 Ta = 150C 100C 25C 1 Ta = 150C 100C 25C - 20C 10 - 20C 1 100C 25C 0.1 1 0.1 25C 0.01 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0 20 40 60 80 100 120 Forward voltage VF (V) Forward voltage VF (V) Reverse voltage VR (V) VF Ta 1.6 Between pins 1 and 3 1.4 1.4 1.6 VF Ta 1 000 Between pins 2 and 3 100 IR Ta Between pins 2 and 3 Between pins 1 and 3 Forward voltage VF (V) Forward voltage VF (V) 1.2 1.0 0.8 0.6 0.4 0.2 0 -40 10 mA 3 mA IF = 100 mA 1.2 1.0 0.8 10 mA 0.6 0.4 0.2 0 -40 3 mA IF = 100 mA Reverse current IR (nA) 10 VR = 75 V 35 V 6V VR = 75 V 35 V 1 0.1 6V 0 40 80 120 160 200 0.01 -40 0 40 80 120 160 200 0 40 80 120 160 200 Ambient temperature Ta (C) Ambient temperature Ta (C) Ambient temperature Ta (C) Ct VR 6.0 f = 1 MHz Ta = 25C 1 000 300 IF(surge) tW Ta = 25C IF(surge) tW Terminal capacitance Ct (pF) 5.0 Forward surge current IF(surge) (A) 100 30 10 3 Non repetitive 4.0 3.0 Between pins 2 and 3 2.0 Between pins 1 and 3 1 0.3 0.1 0.03 1.0 Between pins 2 and 3 Between pins 1 and 3 0 20 40 60 80 100 120 0 0.1 0.3 1 3 10 30 Reverse voltage VR (V) Pulse width tW (ms) 2 |
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