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DGT304RE
DGT304RE
Reverse Blocking Gate Turn-off Thyristor
DS5518-2.1 February 2002
FEATURES
s s s s s s s
KEY PARAMETERS ITCM VDRM/VRRM IT(AV) dVD/dt diT/dt 700A 1300V 250A 500V/s 500A/s
Reverse Blocking Capability Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capability Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements
APPLICATIONS
s s s s s s s
Variable speed A.C. motor drive inverters (VSD-AC) Uninterruptable Power Supplies High Voltage Converters Choppers Welding Induction Heating DC/DC Converters
Outline type code: E (See Package Details for further information) Fig. 1 Package outline
VOLTAGE RATINGS
Type Number Repetitive Peak Off-state Voltage VDRM V 1300 Repetitive Peak Reverse Voltage VRRM V 1300 Conditions
DGT304RE13
Tvj = 125oC, IDM = 50mA, IRRM = 50mA, VRG = 2V
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CURRENT RATINGS
Symbol ITCM IT(AV) IT(RMS) Parameter Conditions Max. 700 250 390 Units A A A
Repetitive peak controllable on-state current VD = 60%VDRM, Tj = 125oC, diGQ/dt =15A/s, Cs = 2.0F Mean on-state current RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. THS = 80oC. Double side cooled. Half sine 50Hz.
SURGE RATINGS
Symbol ITSM I2t diT/dt dVD/dt Parameter Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Rate of rise of off-state voltage Conditions 10ms half sine. Tj = 125oC 10ms half sine. Tj =125oC VD = 60% VDRM, IT = 700A, Tj = 125oC, IFG > 20A, Rise time < 1.0s To 80% VDRM; RGK 1.5, Tj = 125oC Max. 4.0 80000 500 500 Units kA A2s A/s V/s
GATE RATINGS
Symbol VRGM IFGM PFG(AV) PRGM diGQ/dt tON(min) tOFF(min) Parameter Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time Conditions This value maybe exceeded during turn-off Min. 10 20 40 Max. 16 50 10 6 50 Units V A W kW A/s s s
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THERMAL RATINGS
Symbol Parameter Conditions Double side cooled Rth(j-hs) DC thermal resistance - junction to heatsink surface Anode side cooled Cathode side cooled Rth(c-hs) Tvj TOP/Tstg Contact thermal resistance Virtual junction temperature Operating junction/storage temperature range Clamping force Clamping force 5.5kN With mounting compound per contact Min. -40 5.0 Max. 0.075 0.12 0.20 0.018 125 125 6.0 Units
o
C/W C/W C/W C/W
o
o
o
o
C C
o
kN
CHARACTERISTICS
Tj = 125oC unless stated otherwise Symbol VTM IDM IRRM VGT IGT IRGM EON td tr EOFF tgs tgf tgq QGQ QGQT On-state voltage Peak off-state current Peak reverse current Gate trigger voltage Gate trigger current Reverse gate cathode current Turn-on energy Delay time Rise time Turn-off energy Storage time Fall time Gate controlled turn-off time Turn-off gate charge Total turn-off gate charge IT =600A, VDM = 750V Snubber Cap Cs = 1.5F, diGQ/dt = 15A/s RL = (Residual inductance 3H) Parameter Conditions At 600A peak, IG(ON) = 2A d.c. At = VDRM, VRG = 2V At VRRM VD = 24V, IT = 100A, Tj = 25oC VD = 24V, IT = 100A, Tj = 25oC VRGM = 16V, No gate/cathode resistor VD = 900V, IT = 600A, dIT/dt = 300A/s IFG = 20A, rise time < 1.0s RL = (Residual inductance 3H) Min. Max. 2.2 25 50 0.9 1.0 50 130 1.5 3.0 350 10 11 0.9 700 1400 Units V mA mA V A mA mJ s s mJ s s s C C
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CURVES
Fig.2 Gate characteristics
Fig.3 Maximum (limit) on-state characteristics
Fig.4 Dependence of ITCM on CS
Fig.5 Maximum (limit) transient thermal resistance
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Fig.6 Surge (non-repetitive) on-state current vs time
Fig.7 Steady state rectangulerwave conduction loss - double side cooled
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Fig.8 Steady state sinusoidal wave conduction loss - double side cooled
Fig.9 Turn-on energy vs on-state current
Fig.10 Turn-on energy vs peak forward gate current
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Fig.11 Turn-on energy vs on-state current
Fig.12 Turn-on energy vs peak forward gate current
Fig.13 Turn-on energy vs rate of rise of on-state current
Fig.14 Delay time and rise time vs on-state current
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Fig.15 Delay time and rise time vs peak forward gate current
Fig.16 Turn-off energy vs on-state current
Fig.17 Turn-off energy vs rate of rise of reverse gate current
Fig.18 Turn-off energy vs on-state current
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Fig.19 Turn-off energy vs rate of rise of reverse gate current
Fig.20 Turn-off energy vs on-state current with CS as parameter
Fig.21 Storage time vs on-state current
Fig.22 Storage time vs rate of rise of reverse gate current
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Fig.23 Fall time vs on-state current
Fig.24 Fall time vs rate of rise of reverse gate current
Fig.25 Peak reverse gate current vs on-state current
Fig.26 Peak reverse gate current vs rate of rise of reverse gate current
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Fig.27 Turn-off gate charge vs on-state current
Fig.28 Turn-off gate charge vs rate of rise of reverse gate current
Fig.29 Dependence of critical dVD/dt on gate-cathode resistance and gate-cathode reverse voltage
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Anode voltage and current
0.9VD
0.9IT
dVD/dt VD IT
0.1VD td tgt tr
VDP tgs tgf
ITAIL
Recommended gate conditions:ITCM = 700A IFG = 20A dIFG/dt = 20A/s IG(ON) = 2A d.c. tw1(min) = 4.5s VD VDM IGQM = 120A dIGQ/dt = 15A/s QGQ = 700c VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications.
dIFG/dt
tgq IFG VFG IG(ON)
Gate voltage and current
0.1IFG
0.1IGQ tw1 QGQ 0.5IGQM IGQM V(RG)BR
VRG
Fig.30 General switching waveforms
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PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2 holes O3.6 0.1 x 2.0 0.1 deep (One in each electrode)
Cathode tab Cathode O42max O25nom. Gate
15 14
30 15
O25nom.
Anode
Nominal weight: 82g Clamping force: 6kN 10%
Package outine type code: E
ASSOCIATED PUBLICATIONS
Title Calculating the junction temperature or power semiconductors GTO gate drive units Recommendations for clamping power semiconductors Use of V , r on-state characteristic
TO T
Application Note Number AN4506 AN4571 AN4839 AN5001 AN5177
Impoved gate drive for GTO series connections
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICES Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 SALES OFFICES North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2002 Publication No. DS5518-2 Issue No. 2.1 February 2002 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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