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TO-220 8A Thyristor
TF821M, TF841M, TF861M
s Features
qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=8A qGate trigger current: IGT=15mA max
External Dimensions
(Unit: mm)
16.7max 3.00.2 8.80.2 10.4max
5.0max 2.1max
3.750.1
a b
0.15 1.35
12.0 min
4.0 max
+0.2 0.65 -0.1 0.1 2.5
(1). Cathode (K) (2). Anode (A) (3). Gate (G)
0.1 2.5
0.2 1.7
a. Part Number b. Lot Number
(1) (2) (3)
Weight: Approx. 2.6g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature
Symbol
VDRM VRRM VDSM VRSM IT(AV) IT(RMS) ITSM IFGM VFGM VRGM PGM PG (AV) Tj Tstg
Ratings
TF821M 200 200 300 300 TF841M 400 400 500 500 8.0 12.6 120 2.0 10 5.0 5.0 0.5 - 40 to +125 - 40 to +125 TF861M 600 600 700 700
Unit
V V V V A A A A V V W W C C
Conditions
Tj= -40 to +125C, RGK =1k
50Hz Half-cycle sinewave, Continuous current, Tc=83C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125C f f f 50Hz, duty 50Hz 50Hz, duty 10% 10%
sElectrical Characteristics
Parameter
Off-state current Reverse current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance
Symbol
IDRM IRRM VTM VGT IGT VGD IH dv/dt tq Rth
Ratings
min typ max 2.0 2.0 1.4 1.5 5.0 0.1 4.0 50 30 2.7 15
Unit
mA mA V V mA V mA V/S S
C/W
Conditions
Tj=125C, VD=VDRM(VRRM), RGK=1k TC=25C, ITM=15A VD=6V, RL=10, TC=25C VD=1/2xVDRM, Tj=125C, RGK=1k RGK=1k, Tj=25C VD=1/2 x VDRM, Tj=125C, RGK=1k, CGK=0.033F Tc=25C Junction to case
14
TF821M, TF841M, TF861M
vT - iT Characteristics (max)
100 50
ITSM Ratings
140
Initial junction temperature Tj=125C
I TSM
Gate Characteristics
12
Gate trigger voltage VGT (V) Tc= -20C 20 Tc= -40C 30 2 Tc=25C 0 10
Surge on-state current ITSM (A)
1 cycle
vGF (V)
5C
120
10 ms
10
=5W PGM
iT (A)
12
5C
1
Tj=
Gate voltage
On-state current
10 5
Tj= 2
8
100
0
6 4 2 0
Gate trigger current IGT (mA)
80
1 0.5 0.3 1.0
60
See graph at the upper right
40 2.0 3.0 4.0
On-state voltage
vT ( V )
1
5
10
50
100
0
1
2
3
Number of cycle
Gate current
iGF (A)
IT(AV) - PT(AV) Characteristics
18
IT(AV) - Tc Ratings
150
50Hz Half-cycle sinewave : Conduction angle
Average on-state power PT(AV) (W)
16 14 12
DC
50Hz Half-cycle sinewave : Conduction angle
Case temperature TC (C)
0 15
0 18 0
0 180
125
0 180
60
8 6 4 2 0 0 2
=
30
50
25 0
4
6
8
10
12
14
0
2
4
6
8
10
12
DC 14
75
=30
90 120 150
180
60
10
90 12
100
16
Average on-state current IT(AV) (A)
Average on-state current IT(AV) (A)
Pulse trigger temperature Characteristics vgt (Typical)
30
trigger VGT DC gateat 25C voltage
Pulse trigger temperature Characteristics igt (Typical)
trigger IGT DC gateat 25C current
50%
IH temperature Characteristics
(Typical)
igt
50%
)
vgt tw
)
30 TC=- 40C - 20C 25C 75C 125C
26
(RGK=1k)
tw
vgt ( Gate trigger voltage) at Ta and tw
igt (Gate trigger current ) at Ta and tw
1
1
Holding current IH (mA)
10 3 10 4
10
TC=- 40C -20C 25C 75C 125C
10
20
(
(
10
0.1 0.5 1
10
10 2
10 3
10 4
0.1 0.5 1
10
10 2
0 -40
0
25
50
75
100
125
Pulse width
tw (s)
Pulse width
t w (s)
Case temperature Tc (C)
VGT temperature Characteristics
(Typical)
1.0 (VD=6V, RL=10)
IGT temperature Characteristics
(Typical)
14 12 10 8 6 4 2 0 - 40 (VD=6V, RL=10)
Transient thermal resistance Characteristics (Junction to case)
10
0.8
Gate trigger current IGT (mA)
Gate trigger voltage VGT (V)
0.6
Transient thermal resistance
rth (C/W)
1 0.1 1 10
0.4
0.2
0 -40
0
25
50
75
100
125
0
25
50
75
100
125
10 2
10 3
10 4
Junction temperature Tj (C)
Junction temperature Tj (C)
t, Time (ms)
15

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