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TB31262F TOSHIBA Bi- CMOS Integrated Circuit Silicon Monolithic TB31262F RF 1chip IC for 900 MHz Cordless Telephone One package involve three systems about RF, IF, and AF. Involving LNA, MIX, PA, VCO (TX,RX), PLL, IF-AMP, Detecter, Compander,and 4 useful audio amplifiers. It is possible to reduce many external parts. This IC is suitable for ISM 900 MHz cordless telephone. Features * * * * * * * * * * * * * * * Same system & software almost compatible as TB31261AF (Single Conversion, IF Frequency: 10.7 MHz,) Built-in LNA Built-in 1'st MIX Double Balanced MIX (DBM) Type. Built-in Differential VCO, Variable capacitor (TX, RX) and Doubler (450 MHz x 2) Built-in PA A substitution from TB31261AF is easy (Same package, Software almost compatible) Low operating voltage: V CC = 2.0~5.0 V Current operating current: ICC = 70 mA (All On) PLL operating frequency :around 450 MHz Serial control for all status Built in pre-amp, receiver-amp, mic-amp, and spl-amp Receiver output Level adjustment. Variable battery alarm setting. (7 thresholds) Built in battery saving function for Intermittent receiving. Small package: QFP52pin (0.65 mm pitch) QFP52P- 1010 0.65 - *- Handle with care to prevent devices from deterioration by static electricity. 1 2001-12-26 TB31262F Block Diagram C45 1n Matching Network LPF L9 15n C32 3p C31 C43 RXVCO RXVCO 10n R12 C27 G - L2 - L1 4.7k 27n R X-VCC C22 10.7MHz C21 VCC1C48 10.7MHz C28 100n CF G 10 47p C29 E-RECT C18C19 CF 100n C24 C23 17 16 R X -G N D 2.2 C20 IF -AMP IF -AMP1 I F-AMP1 10n 2.2n 2.2n 100n R X-LOOP 47p 2.2 I F-AMP2 R E F 10 OUT IN IN 30 C-RECT 39 38 37 36 35 34 33 32 31 29 28 27 C44 8.2n L8 VREF 47p 450MHzOSC I F-AMP2 C30 40 26 Balanced Connectable (1'st) LNA-C MIX-OUT Phase Bias Differential RX VCO Compalator VCC3 I F-AMP1 GND1 C17 C16 41 25 Gv = 24dB Divider LNA 100p R8 100n Buffer Double ( x 2) 100K LNA-E 42 24 DATA -OUT 900MHz Gv DATA -COMP R9 R11 C15 LNA-B 0 1n RSSI 43 23 R10 Double Balanced MIX 44 22 SIG -OUT R7 100k CLK C 3 4 C33 100n 10 VCC2 MAX 50 k (EX) ANT 38kohm R13 C37 1 C35 18n VR2 R14 DATA -IN 45 39k R17 FEED BACK P R E-AMP A F-OUT 470k 22pF 21 Differential TX OSC I F-AMP2 1' st, 2'nd Amount Gv = 72dB DATA LATCH CONTROL 20 C36 100k 1 DC-CUT P R E-IN 46 3kohm Det Coil QUAD 47 DATA 19 C14 DC-CUT 1 GND2 P A-GAIN-CONT T C46 C47 VR1 15 C-N P 2.2 14 C13 2.2 1k 50K 1n 47p STB R E F-IN LPF:Fc = 15kHz 48 QUAD I F-AMP2 (2'nd) Buffer 900MHz Doubler ( x 2) 450MHz FREQ 16 MOD S P L -AMP COMP MIC -AMP Phase Differential TX OSC Compalator Balanced Connectable to MIX MIC OUT MIC IN 11 C25 10n 14 2.2n 12 13 15 2.2n T X- G N D Divider 18 DUP C39 C38 100n 10 R17 8.2k C40 49 T X-MUTE R15 1 SOFT VOLUME (ATT) 220k 50 C41 220pF 51 EXP 17 P i-Matching Network EXP -OUT B i-Pass R16 330k DYNAMIC RECEIVR R RECEIVER 1 52 RECEIVER 2 40pF C1 P A -VCC 47p BI BI C2 PASS PASS 1n 1 2 3 4 5 T XMUTE 6 C12 1 R6 C11 T X-LOOP P A-OUT1 P A-OUT2 P A -G N D 11 3.3n P i-Matching Network L3 10n C4 C5 3p C3 5p C42 3p 12 3.3n 7 8 9 10 S P L COMP FEED R2 B A C K 470k IN OUT T X-VCC C8 C10 C26 1 C7 DC-CUT 47p LPF R4 R1 L P F R5 R3 100p 15k 0 39k 470k DC-CUT GAIN C6 C9 SETTING 1 LPF MIC IN GAIN SETTING SPL OUT TXVCO TXVCO - L1 - L2 2 2001-12-26 TB31262F Pin Function (The values of internal components are typical) Pin No. 1 Pin Name PA-V CC V CC terminal Function Internal Equivalent Circuit 1 2 2 PA-OUT1 Differential output terminal1 of Power Amp 3 PA-OUT2 Differential output terminal2 of Power Amp 3 4 PA-GND GND terminal 4 300 5 SPL-OUT Output terminal of Splatter Amp 5 SPL-OUT 300 40 A 300 100 A 14 4 7 300 6 6 SPL-IN Input terminal of Splatter Amp VCO V CC1 200 100 A 7 COMP-OUT Output terminal of Compressor GND1 200 A 8 MIC-OUT Output terminal of MIC Amp 30 k 10 A V CC1 9 8 9 MIC-IN Input terminal of MIC Amp 300 GND1 3 2001-12-26 GND1 TB31262F Pin No. 10 Pin Name TX-V CC V CC terminal Function Internal Equivalent Circuit 10 11 TXVCO-L1 Terminal1 for external inductor of differential TXVCO 5 SPL OUT 12 TXVCO-L2 Terminal2 for external inductor of differential TXVCO 14 TX LOOP 13 TX-GND GND terminal 11 13 12 V CC3 VCO 14 TX-LOOP Terminal1 for TX loop filter 14 GND2 200 A V CC1 15 V REF 30 k 10 A GND1 15 C-NF Terminal for compressor's negative feedback capacitor 30 k 16 PA-GAIN-CONT PA gain control terminal for external variable resistance to GND 16 10 k 17 18 GND2 REF-IN GND terminal Reference clock input terminal 18 500 100k 4 2001-12-26 TB31262F Pin No. 19 20 21 Pin Name STB DATA CLK Function Strobe input terminal for serial data setting Data input terminal for serial data setting Clock input terminal for serial data setting 19 20 21 1 k Internal Equivalent Circuit GND2 22 22 SIG-OUT Signal output terminal 200 GND2 V CC1 15 k 23 RSSI RSSI linear output terminal 23 GND1 V CC1 24 DATA-OUT Output terminal of Data comparater 24 GND1 25 V CC3 V CC terminal 26 MIX-OUT Output terminal from Mixer 270 26 5 2001-12-26 TB31262F Pin No. Pin Name Function Internal Equivalent Circuit 0.5 pF 1.7 k 1.7 k 0.5 pF V CC1 3 k V CC1 3 k 32 27 IFAMP1IN Input terminal for IF-AMP1 27 29 170 200 A 0.5 pF 3 k 3 k 200 A 270 800 A 34 36 VCO 170 GND1 28 V CC1 V CC terminal 0.5 pF 170 170 V CC1 GND1 30 29 30 IFAMP2IN Input terminal for IF-AMP2 GND1 29 31 IF-AMP-REF E-RECT Reference terminal for IF-AMP1 and IF-AMP2 Expander's external rectifier capacitor terminal 32 IFAMP1OUT Output terminal from Expander 33 VREF Reference voltage output terminal with external Bi-pass capacitor 34 RX-GND GND terminal 37 35 RX-VCOL1 Terminal1 for external inductor of differential RXVCO 36 RX-VCOL2 Terminal2 for external inductor of differential RXVCO 14 RX LOOP 37 RX-V CC V CC terminal 35 V CC3 38 RX-LOOP Terminal1 for RX loop filter 38 GND2 6 2001-12-26 TB31262F Pin No. Pin Name Function Internal Equivalent Circuit V CC1 300 8.3 k GND1 V CC1 10 A 45 DATA-IN Input terminal of data comparator 50k 45 GND1 V CC1 200 A V REF 46 PRE-IN Input terminal of Pre Amp 46 300 10 A EXP 39 C-RECT Terminal for Compressor's rectifire capacitor 39 40 LNA -C Corrector terminal of LNA 40 42 LNA -E Emitter terminal of LNA 43 43 LNA -B Base terminal of LNA 42 41 44 GND1 V CC2 GND terminal V CC terminal V CC1 300 GND1 GND1 7 2001-12-26 TB31262F Pin No. Pin Name Function Internal Equivalent Circuit V CC2 80 A 47 AF-OUT Audio frequency output terminal of Quadrature detection 330 47 GND1 4 k 48 48 QUAD Terminal for external Quad-Coil for detection GND1 500 3pF 4 k V CC2 100 300 A GND1 V CC1 49 300 GND1 V CC1 52 GND1 V CC1 51 GND1 V CC1 50 GND1 GND1 49 EXP-OUT Output terminal of Expander ATT 20 pF 50 REC-IN Input terminal of Receiver Amp 20 k 5pF 10 A 51 REC-OUT1 Differential output terminal1 of Receiver Amp 10 k 20 k 10 k 10 A 300 V REF 52 REC-OUT2 Differential output terminal2 of Receiver Amp 40 A 8 2001-12-26 TB31262F 1. General Description TB31262F is controlled all status by serial data. This IC is included IF detector, PLL, and compander. IF detector function is for wide-band system, dual PLL function, and compander with MIC amp and receiver amp. + POWER SUPPLY BLOCK ASSIGN V CC1 V CC2 V CC3 RX-V CC TX-V CC PA-V CC GND2 RX-GND TX-GND PA-GND GND1 LNA, MIX, IF-AMP1, DATA-COMP, MIC-AMP, COMPRESSOR, RECEIVER-AMP PRE-AMP, EXPANDER, SPLATTER-AMP IF-AMP2, QUAD RX-PLL, TX-PLL, REF-INPUT, DATA LATCH CONTROL RX-VCO + DOUBLER+BUFFER TX-VCO + DOUBLER+BUFFER POWER-AMP VCC1 VCC2 LNA MIX IF1 IF2 RX-VCC VCC3 RX-VCO +DOUBLER +BUFFER EXP RX-PLL LOGIC RX-GND TX-VCC PA-VCC TX-PLL COMP PA TX-VCO +DOUBLER +BUFFER GND2 GND1 PA-GND TX-GND 9 2001-12-26 TB31262F Gv distribution for receiving ISM900 (902-928 MHz) * DUP LNA MIX CF1 IF AMP1 CF2 IF AMP2 QUAD -4dB 20dB 7dB -4dB 24dB -4dB 72dB 0dB Total 109dB 2. PLL block CP FIN 1/16,1/17 (4 bit counter) 11 bit counter 3. Data Latch Control This block has 4 registers assigned by 2 or 3 bits CODE. DATA is read on the time of up edge of CLK. When STB receivers high signal, DATA in shift register is sent into LATCH to control block which CODE indicates and the operation starts. INPUT TIMING FOR SERIAL DATA When both CLK "H" and DATA "L", STB "H" leads data active. > 1 s CLK DATA > 0.1 s = STB Operation State > 0.1 s = > 0.2 s = > 0.2 s = Previous State New State > 0.2 s = > 0.2 s = > 0.2 s = Code * * * 0 1 1 0 1 0 0 0 1 1 0 0 Control Block TX divider (18 bits) RX divider (18 bits) REF divider (12 bits) Option control 1 Option control 2 Function Setting frequency for TX-PLL Setting frequency for RX-PLL Setting phase comparison frequency Battery save, Mute control, etc Volume control 10 2001-12-26 TB31262F 4. Serial data format (1) TX DIVIDER (Set VCO Doubler Output Frequency (EX 900 MHz, Not 450 MHz)) Programmable counter (11 bit) M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 M10 * 1 Code 0 Swallow counter (4 bit) A0 A1 A2 A3 1st *don't care N = 2 x (16M + A) (480 - 65534) A = A0 + 2A1 + 4A2 + 8A3 M = M0 + 2M1 + 4M2 + 8M3 + 16M4 + 32M5 + 64M6 + 128M7 + 256M8 + 512M9 + 1024M10 STB (2) RX DIVIDER (Set VCO Doubler Output Frequency (EX 900 MHz,Not 450 MHz)) Programmable counter (11 bit) M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 M10 * 0 Code 1 STB Swallow counter (4 bit) A0 A1 A2 A3 1st *don't care N = 2 x (16M + A) (480 - 65534) A = A0 + 2A1 + 4A2 + 8A3 M = M0 + 2M1 + 4M2 + 8M3 + 16M4 + 32M5 + 64M6 + 128M7 + 256M8 + 512M9 + 1024M10 (3) REF DIVIDER Programmable counter (10bit) Code R6 R7 R8 R9 1 1 R0 R1 R2 R3 R4 R5 1st STB N = R(4 - 1023) R = R0 + 2R1 + 4R2 + 8R3 + 16R4 + 32R5 + 64R6 + 128R7 + 256R8 + 512R9 (4) Option control 1 SIG OUT TX control RF AF CP MUT RF RX control AF CP BAT-ALM (Setting) MUTE BA1 BA2 BA3 0 Code 0 0 STB TXLD RXLD RSSI BALM 1st 11 2001-12-26 TB31262F 1*j Battery saving (BS) control 0 1 Operation Battery Saving (BS) Bit RX-RF Control Block RX-PLL,RX-Buffer Tr, IF AMP,QUAD,DATA COMP,RSSI, LNA, MIX, RX - VCO + DOUBLER ICC 2 RX-AF TX-RF TX-AF PRE AMP,EXPANDER,RECEIVER AMP ICC 3 TX-PLL,TX-Buffer Tr , PA ,TX-VCO + DOUBLER ICC 4 MIC AMP, COMPRESSOR, SPLATTER-FILTER ICC 5 REF INPUT = OFF at TX-RF = 1 and RX-RF = 1 2*j Charge Pump Output Current Select CP 0 1 Current 400 A 800 A 3*j MUTE control 0 1 Operation MUTE ON TX-MUTE control for COMPRESSOR output. RX-MUTE control for EXPANDER output. 4*j Battery Alarm Detection Setting This IC has 5 threshold levels for detection of battery dropping. These threshold levels are given by below table. BA1 1 0 0 0 0 1 1 1 BA2 0 0 0 1 1 0 1 1 BA3 1 0 1 0 1 0 0 1 DET. Voltage 2.15 V 2.25 V 3.00 V 3.15 V 3.30 V 2.85 V 2.75 V BS 12 2001-12-26 TB31262F 5*j SIG OUT selection SIG OUT terminal generates combination states of RX and TX LOCK DETECTOR and RSSI. 0 1 OFF OUT PUT BIT TXLD RXLD RSSI BALM FUNCTION TX-PLL LOCK DETECTOR RX-PLL LOCK DETECTOR RSSI COMPARATOR OUTPUT BATTERY ALARM (5) Option control 2 RECEIVER OUTPUT LEVEL CONTROL It is possible to volume control to set these bits. And this resister includes TEST bits which must be set 0 in customer side. 1.5dB steps from 0dB to -22.5dB. Receiver Volume Code 1 0 0 VOL1 VOL2 VOL3 VOL4 TEST VOL1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 VOL2 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 VOL3 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 VOL4 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 GAIN 0dB -1.5dB -3.0dB -4.5dB -6.0dB -7.5dB -9.0dB -10.5dB -12.0dB -13.5dB -15.0dB -16.5dB -18.0dB -19.5dB -21.0dB -22.5dB 13 2001-12-26 TB31262F MAXIMUM RATINGS (Ta = 25C) Characteristic Power Supply Voltage Power Dissipation Operating Temperature Storage Temperature Symbol VCC PD T opr T stg Rating 6 *1) 900 -20~70 -50~150 Unit V mW C C *1) IC single unit TENTATIVE ELECTRICAL CHARACTERISTICS (1) System Characteristics - TOTAL (V CC = 3.6 V, Ta = 25C, f = 25 kHz, fmod = 1 kHz*j Test Characteristic Symbol Test Condition Circuit Operating Power Supply Voltage Consumption Current 1 V CC (opr) ICC1 P ALL ON*C PA-GAIN CONT = 20 k Consumption Current 2 Consumption Current 3 Consumption Current 4 ICC2 ICC3 ICC4 P P P RX-RF ON RX-AF ON TX-RF ON*C PA-GAIN CONT = 20 k Consumption Current 5 Alarm Supply Current Supply Current at BS Data Input Threshold1 ICC5 ICC (A) ICC (BS) V IH V IL Data Input Current I IH I IL CK Input Frequency f CK P P P P P P V IH = V CC V IL = GND TX-AFON RL = 100k 3.3Vmode ALL OFF 1.1 80 *\ 0.8 x V CC -0.2 1.7 115 0 V CC 0 0 0 100 2.3 180 5 4.0 0.2 x V CC 1 1 4000 mA A A V V A A KHz 18.0 2.0 32.0 26.0 2.9 40.0 34.0 3.8 48.0 mA mA mA Min 2.0 56.0 Typ. 3.6 70.0 Max 5.0 84.0 Unit V mA 14 2001-12-26 TB31262F - DETECTORS (Unless Otherwise Specified, V CC = 3.6 V, Ta = 25C) DETECTOR-1: BATTERY ALARM Characteristic Detection Voltage0 Symbol VBAT0-L VBAT0-H Detection Voltage1 VBAT1-L VBAT1-H Detection Voltage2 VBAT2-L VBAT2-H Detection Voltage3 VBAT3-L VBAT3-H Detection Voltage4 VBAT4-L VBAT4-H Detection Voltage5 VBAT5-L VBAT5-H Detection Voltage6 VBAT6-L VBAT6-H P P P P P P Test Circuit P Test Condition Min 2.07 *\ 2.17 *\ 2.67 *\ 2.77 *\ 2.92 *\ 3.05 *\ 3.20 *\ Typ. 2.15 2.22 2.25 2.32 2.75 2.83 2.85 2.93 3.00 3.08 3.15 3.25 3.30 3.40 Max 2.23 2.30 2.33 2.40 2.83 2.91 2.93 3.01 3.08 3.16 3.25 3.35 3.40 3.50 Unit V V V V V V V V V V V V V V DETECTOR-2: DATA COMPARATOR Characteristic Duty Ratio1 Duty Ratio2 Symbol Duty1 Duty2 Test Circuit Q Q P P Test Condition VIN (Data Comparator Input) = 40mVrms, "H"Level, F = 500 kHz VIN (Data Comparator Input) = 120mVrms, "H"Level, F = 500 kHz I SINK = 0.2 mA H LEVEL Min 42 43 *\ *\ Typ. 46 48.5 0.1 0 Max 50 50 0.5 5 Unit % % V A Output Low Level Voltage V OL2 Output Leak Current I LEAK2 DETECTOR-3: SIG OUT Characteristic Symbol Test Circuit P P Test Condition I SINK = 0.2 mA H Level Min Typ. 0.1 0 Max 0.5 5 Unit V A Output Low Level Voltage VOL3 Output Leak Current I LEAK3 - PLL (Doubler Type Differential VCO System with Vari-Cap) (Unless Otherwise Specified, V CC = 3.6 V, Ta = 25C) Characteristic Symbol Test Circuit P P P VIN = 280mVp-p fIN = 4 MHz VCP = 1.8 V VCP = 1.8 V Test Condition Min *\ 2 200 Typ. 450 4 280 400 800 0 Max *\ 10 5 Unit MHz MHz *Vp-p uA uA uA PLL Operating Frequency f IN XIN Operating Frequency XIN Input Sensitivity Charge Pump Output Current Charge Pump Leak Current fXI VXIH ICP1 ICP2 I LEAK 15 2001-12-26 TB31262F (2) RX CHARACTERISTICS - RF (V CC = 3.6 V, Ta= 25C, f = 25 kHz, fmod = 1 kHz) Characteristic 12dB SINAD Sensitivity LNA *{MIX Gain IF AMP1 Gain IF AMP2 Gain Demodulated Output level Demodulated Output level2 S/N Ratio Symbol 12dB SINAD f- GIF1 GIF2 V OD V OD Test Circuit Q Q VIN (RF (DUP) ) = 50dBV EMF VIN (RF (DUP) ) = 15dBV EMF VOD-3dB VOD * Test Condition LNA MATCHING INPUT Min *\ *\ *\ 88 -3.0 Typ. 2.5 27 24 72 108 0 Max *\ *\ *\ *\ 128 *\ Unit dBu V EMF dB dB mVrms dB SN Q VIN (RF (DUP) ) = 50dBV EMF with300*3kHz filter 40 47.5 *\ dB AM Rejection Ratio IFAMP1 input Resistance IFAMP1 Output Resistance IFAMP2 Input Resistance RSSI Output Voltage AMR RIF1IN RIF1OUT RIFOUT VRSSI1 VRSSI2 Q VIN (RF (DUP) ) = 50dBV EMF IF1-IN IF1-OUT IF2-IN VIN (RF (DUP) ) = 15dBV EMF VIN (RF (DUP) ) = 50dBV EMF *\ *\ *\ *\ 0.33 1.17 0.7 40 330 330 330 0.63 1.47 1.0 *\ *\ *\ *\ 0.93 1.77 1.3 dB V V V RX VCO Control voltage Vcont RX Q =936.7MHz - AF PRE AMP + EXPANDER + RECEIVER AMP Characteristic EXP Output Reference Level EXP Output Deviation Total Hormonic Distortion Output Noise Level Maximum Output Level MUTE Output Level PRE AMP Voltage Gain Setting Range RECEIVER AMP Voltage Gain Setting Range Offset Voltage Crosstalk CE Attack Time Recovery Time Symbol VrefE Test Circuit Q Test Condition VIP = -20dBV PRE-AMP INPUT RESISTANCE: 150k VOP = -45dBV RL = 150 VRI = -15dBV Input -GND Short THD = 3%, 150 load RO1RO2 VIM = -10dBV VIP = -18 -12dBV VIP = -12 -18dBV Min -14.0 Typ. -10.0 Max -6.0 Unit dBV VOE THD R VNOR DR VMUTE GRNG2 GRNG1 TOF2 CTCE TAE TRE Q Q Q 1 -1.0 *\ *\ *\ *\ 0 6 -50 *\ *\ *\ 0.0 1.15 -90 2.2 -70 0 -65 8.5 4.5 +1.0 2.0 -65 *\ *\ 20 20 50 *\ *\ *\ dB % dBV Vp-p dBV dB dB mV dB ms ms 16 2001-12-26 TB31262F (3) TX CHARACTERISTICS - RF (V CC = 3.6 V, Ta= 25C, f = 25 kHz, fmod = 1 kHz) Characteristic PA OUTPUT LEVEL PA GAIN CONTROL Symbol PA-OUT PA-CONT Test Circuit Q Q Test Condition AFTER MATCHING NETWORK VR = 20 k VR = 100 k, PA-OUT Deviation PA OUTPUT IMPEDANCE PA OUTPUT CAPACITANCE TX VCO Control voltage TX VCO Deviation TX VCO Distortion PA-ROUT PA-COUT Vcont TX f TX THD TX Q Q Q AFTER MATCHING NETWORK AFTER MATCHING NETWORK =904MHz FILOUT=-30dBV, =904MHz FILOUT=-30dBV, =904MHz *\ *\ 0.4 *}25 *\ 50 30 0.7 *}30 1.0 *\ *\ 1.0 *}35 3.0 pF V KHz *" Min 0 -9.0 Typ. +3.0 -6.5 Max +6.0 -4.0 Unit dBm dB - AF (Unless Otherwise Specified, V CC = 3.6 V, fin = 1 kHz, Ta = 25C) MIC AMP + COMPRESSOR Characteristic COMP Output Reference Level COMP Output Deviation MIC AMP Voltage Gain Setting range Total Hormonic Distortion Output Noise Level Limitting Level Symbol VrefC VOC VGR THD C V NOC V lim1 V lim2 MUTE Output Level Crosstalk EC Attack Time Recovery Time V MUTE CTEC TAC TRC Test Circuit Q Q Q Q VOM = -10dBV Input-GND Short COMP OUT, VIM = 0dBV MIC OUT, VIM = 0dBV VIP = -10dBV VIM = -46 -34dBV VIM = -34 -46dBV Test Condition VOM = -10dBV VOM = -30dBV Min -11.5 -0.7 0 -80 Typ. -10.0 0.0 0.15 -61 1.3 2.5 -90 -50.0 3.5 5.0 Max -8.5 +0.7 30 1.0 -48 *\ *\ Unit DBV DB DB % dBV Vp-p Vp-p dBV dB *r *r FILTER AMP Voltage Gain Maximum Output Level Input Bias Current Output DC Voltage G5 DR5 I BIAS Vop P P THD = 3% 0.7 0 3 1.5 1.0 2.5 1.3 dB Vp-p A V 17 2001-12-26 TB31262F TEST CIRCUIT 1(DC) A VCC ICC 1*5 , (A),(BS) 1k 2.2 0.1 0.1 A ILEAK R X-VCC 39 38 37 C-RECT R X-LOOP RXVCO RXVCO -L2 -L 1 4.7 2.2n 36 2.2n 35 34 33 R X-GND VREF 0.1 IF-AMP1 OUT 32 2.2 31 E-RECT 1n 1n 1n 0.1 30 29 28 27 IF-AMP2 IF-AMP VCC1 IF-AMP1 IN REF IN 26 IF-AMP1 Gv = 24dB Buffer Double ( x 2) 9 00MHz DATA-COMP MIX-OUT VCC3 25 100k 24 A ILEAK2 23 Double Balanced MIX RSSI 100k SIG-OUT 22 A ILEAK3 VBAT1*6 V VOL3 CLK 100p IF-AMP2 Gv = 72dB DATA LATCH CONTROL 20 100p 19 100p 1 18 Doubler ( x 2) 900MHz 450MHz FREQ 16 MOD SPL -AMP MIC-AMP COMP Phase Differential TX OSC Balanced Connectable Compalator to MIX MIC OUT 8 20k 0.1 20k 0.022 V 0.1 TXVCO TXVCO -L 1 -L2 MIC IN 9 10 11 2.2n 12 13 C-N P 15 2.2 2.2 14 A IL EAK TX-LOOP 1k 1 Divider VR1 XI VX IH STB REF-IN DATA DATA-OUT V VOL2 0.1 2.2 450MHzOSC 40 LNA-C GND1 41 Bias LNA Phase Compalator Divider IF-AMP2 (1 'st) LNA-E 4 2 LNA-B 43 0.1 VCC2 44 45 DATA-IN 21 Differential TX OSC 470k 46 PRE-IN 4 7 AF-OUT QUAD 470k PRE-AMP 22pF Det Coil LPF:Fc = 15kHz 48 QUAD IF-AMP2 (2 'nd) Buffer EXP-OUT4 9 20k TX-MUTE SOFT VOLUME (ATT) 50 EXP 1 7 GND2 PA-GAIN-CONT 20K 330k 51 TOF2 V RECEIVER 1 52 RECEIVER 2 PA -VCC 1 TXMUTE 2 3 4 5 SPL OUT 20k 20k V OP 6 7 SPL COMP OUT IN A I BIAS PA- OUT1 PA-OUT2 0.1 PA-GND 2.2nTX-GND 18 2001-12-26 TB31262F TEST CIRCUIT2(AC) 1k 0.1 R XVCO RXVCO 2.2 -L1 R X-VCC - L 2 4.7 10n G 10.7MHz CF IF-AMP1 IN 27 10.7MHz VCC1 0.1 CF 2.2 IF-A M P A IF-AMP1 2.2n 100n 2.2 IF-AMP2 REF 4.7 0.1 2.2n Vcont RX OUT C -RECT 3 9 IN 3 0 38 37 36 35 34 33 32 31 29 28 E -RECT 4.7n R X-GND VREF R X-LOOP 450MHzOSC IF-AMP2 40 (1 'st) LNA-C Phase Bias Compalator IF-AMP1 GND1 4 1 Gv = 24dB Divider LNA Buffer LNA-E 42 900MHz Double ( x 2) 26 MIX -OUT VCC3 25 DATA-COMP 24 R9 LNA-B 3p 43 Double Balanced MIX RSSI 2 3 V DATA-OUT Duty1,2 RSSI R11 V VRSSI 1,2 SIG-OUT 1 0 n 10 0 VCC2 44 22 R7 100k 0.1 0.1 45 150k PRE-IN 46 DATA-IN 21 Differential TX OSC IF-AMP2 Gv = 72dB DATA LATCH CONTROL 20 100p 19 100p 1 18 Dou bler ( x 2) 900MHz 450MHz FREQ MOD SPL-A M P COMP MIC-A M P Phase Differential TX OSC Balanced Connectable Compalator to MIX MIC OUT 7 COMP OUT 8 20k 100p 20k 20k VrefC V VOC THD C VNOC 0.1 MIC IN 9 10 11 2.2n 12 13 15 C-N P 2.2 2.2 1k Divider PA-GAIN-CONT 16 T 20K/100k VR1 100p CLK DATA PRE-A M P 4 7 AF-OUT 470k 22pF V VOD VOD SN 300~3k BPF Det Coil QUAD STB REF-IN LPF:Fc = 15kHz 48 QUAD IF-AMP2 (2' nd) Buffer 100n 10 8.2k V VrefE VOE VNOR 330k E X P-OUT 49 1 TX-MUTE SOFT VOLUME (ATT) 220k 50 220pF 51 EXP 1 7 GND2 THD R V RECEIVER 1 150 52 RECEIVER 2 PA-VCC 1 TXMUTE 2 3 4 5 SPL OUT 20k 6 SPL IN 14 V 1 Vcont TX TX-LOOP PA -OUT1 PA -OUT2 100n 10 3.3n PA-GND 2.2nTX- GND 0.1 TXVCO TXVCO -L 1 -L2 3p V PA -OUT PA -CONT fTX THD TX 2.2n 5p 3.3n V 19 2001-12-26 TB31262F VCC-ICC CHARACTERISTICS 90.000 80.000 70.000 60.000 Icc(V) 50.000 40.000 30.000 20.000 10.000 0.000 0 1 2 3 Vcc(V) 4 5 ICC2 ICC3 ICC5 ICC2 ICC(BS) 6 ICC4 ICC(BS) ICC1 ICC4 ICC5 ICC2 ICC3 ICC(A) ICC1 S/N AMR SINAD VOD,VRSSI (Condition:Dup-IN,Vcc=3.6v) 50 2.5 40 SINAD 30 VRSSI 20 2 10 0 1.5 -10 VOD -20 -30 1 AMR -40 S/N -50 0.5 -60 NOISE -70 -80 0 -130 - 110 - 120 - 100 -90 -80-70 -60 -50-40 -30 -20-10 vin ( S(0dB) S/N SINAD AMR NOISE(dBV) VOD(dBV) VRSSI(V) RSSI-COMP VRSSI(V) B 20 2001-12-26 TB31262F COMPANDER CHARACTERISTICS* (Vcc=3.6V) @ 10 0 -10 -20 Output level(dBV) -30 -40 -50 -60 -70 -80 -90 -70 0 -60 -50 -40 -30 -20 -10 0 10 Input level(dBV)* PRE-IN MIC-IN @ 0.2 0.4 THD(%) 2001-12-26 0.6 COMP EXP COMP-THD EXP-THD 1 0.8 EXPANDER frequency CHARACTERITICS ( Vcc=3.6V Vprein=-35dBV soft-vol=0dB) -15 -25 -35 EXP-OUT [dBV] -45 -55 -65 -75 100 1000 freq [Hz] 10000 100000 21 TB31262F VCC-VREF CHARACTERISTICS 1.6 1.4 1.2 1 Vout* V) i 0.8 0.6 0.4 0.2 0 0 1 2 3 Vcc(V) 4 5 6 VREF VCC-SPLOUT (DC Bias) CHARACTERISTICS 1.2 1 0.8 Vout* V) i 0.6 0.4 0.2 0 0 1 2 3 Vcc(V) 4 5 6 SPLOUT 22 2001-12-26 TB31262F RXVCO f-V CHARACTERITICS(Vcc=3.6V) 500.0 490.0 480.0 OSC FREQUENCY *mlg* n 470.0 460.0 450.0 440.0 430.0 420.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 VRXCP [V] swubn f-V CHARACTERITICS(u**R*DUu) 490 480 470 "-*UZu"g*" *mlg*n 460 450 440 430 420 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 ub * u n so m* w 23 2001-12-26 TB31262F Deviation CHARACTERITICS 40 38 36 34 Deviation *n m g * 32 30 28 26 24 22 20 2.00 2.50 3.00 3.50 4.00 4.50 Vcc * un m * 5.00 5.50 6.00 SPL-OUT Level -30dBV 24 2001-12-26 TB31262F Outline Drawing 25 2001-12-26 TB31262F RESTRICTIONS ON PRODUCT USE 000707EBA_S * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 26 2001-12-26 |
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