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| STA485A Absolute maximum ratings Symbol VCBO VCEO VEBO IC ICP IB PT Tj Tstg Ratings 10015 10015 6 1 2.5 (PW1ms, Du25%) 0.5 4 (Ta=25C) 16 (Tc=25C) 150 -40 to +150 NPN Darlington With built-in avalanche diode (Ta=25C) External dimensions D *** STA400 Electrical characteristics ymbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) VFEC ton tstg tf fT Cob 85 2000 100 5000 1.0 1.6 1.4 0.5 2.5 1.0 50 14 Specification min typ max 10 3 115 10000 1.5 2.2 1.8 V V V Unit (Ta=25C) Unit V V V A A A W C C Conditions VCB=85V VEB=6V IC=1mA VCE=4V, IC=0.5A IC=0.5A, IB=1mA IFEC=0.5A VCC 30V, IC=0.5A, IB1=-IB2=1mA VCE=12V, IE=-0.1A VCE=10V, f=1MHz A mA V s s s MHz pF sEquivalent circuit diagram 3 2 1 R1 R2 5 4 6 7 8 9 10 R1: 5k typ R2: 400 typ Characteristic curves IC-VCE Characteristics (Typical) 2.5 5m hFE-IC Characteristics (Typical) 10000 5000 hFE-IC Temperature Characteristics (Typical) 20000 10000 (VCE=4V) typ (VCE=4V) 2m 1m A A A 2 IB= A 0.5m 0.3m A IC (A) 1.5 1000 hFE hFE 1000 C 5 12 C 75 C 25 C 30 - A 0.2m 500 1 100 0.5 50 100 0 0 1 2 3 4 5 6 20 0.01 0.1 1 2.5 30 0.01 0.1 1 2.5 VCE (V) IC (A) IC (A) VCE(sat)-IC Temperature Characteristics (Typical) 3 VCE(sat)-IB Temperature Characteristics (Typical) 3 125C 75C 25C IC-VBE Temperature Characteristics (Typical) 2.5 (IB=2mA) (IC=0.5A) (VCE=4V) 2 VCE (sat) (V) VCE (sat) (V) 2 2 -30C IC (A) 1 1.5 25C -30C 1 1 0.5 75C 5C 75 C 25 C -30 C 125C 0 0.01 0.1 IC (A) 1 5 0 0.05 0.1 1 10 100 0 0 12 1 2 3 IB (mA) VBE (V) j-a-PW Characteristics 30 20 PT-Ta Characteristics 5 With Silicone Grease Natural Cooling Heatsink: Aluminum Safe Operating Area (SOA) S 0 10 15 10 1 W ith m S j-a (C / W) 10 1m PT (W) IC (A) In ite fin S 10 a He tsi nk 5 5 Without Heatsink 0.1 2 1 5 10 50 100 500 1000 Single Pulse Without Heatsink Ta=25C PW (mS) 0 -40 0 50 100 150 0.01 1 10 100 200 Ta (C) VCE (V) 154 |
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