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| e PTB 20167 60 Watts, 850-960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 24 Volt, 905 MHz Common Base Characteristics - Output Power = 60 W - Power Gain = 7.0 dB Min - Efficiency = 60% Min Double Input/Output Matched for Wideband Performance Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 70 Output Power (Watts) 65 60 55 50 45 40 35 30 6 7 8 9 10 11 12 201 67 LO TC OD E VCC = 24 V f = 905 MHz Input Power (Watts) Package 20200 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCEO VCBO VEBO IC PD Value 30 55 4.0 10 175 1 -40 to +150 1 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20167 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain Output Capacitance (100% Tested) e Conditions IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 15 mA VCE = 5 V, IC = 2.0 A VCB = 28 V, f = 1 MHz Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Cob Min 30 55 4.0 20 -- Typ -- -- -- -- 60 Max -- -- -- 100 -- Units Volts Volts Volts -- pF RF Specifications (100% Tested) Characteristic Common Base Power Gain (VCC = 24 Vdc, Pout = 60 W, f = 905 MHz) Collector Efficiency (VCC = 24 Vdc, Pout = 60 W, f = 905 MHz) Load Mismatch Tolerance (VCC = 24 Vdc, Pout = 60 W, f = 905 MHz--all phase angles at frequency of test) Symbol Gpb C Min 7.0 60 -- Typ 7.9 64 -- Max -- -- 5:1 Units dB % -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 24 Vdc, Pout = 60 W) Z Source Z Load Frequency MHz 850 905 960 R 5.4 5.3 5.2 Z Source jX -3.6 -2.4 -1.4 R 5.8 6.2 6.9 Z Load jX -0.7 0.6 1.7 2 e Typical Performance Gain & Efficiency vs. Frequency 9 9 PTB 20167 (as measured in a broadband circuit) 75 72 69 66 63 Gain (dB) 8 8 7 7 6 845 Efficiency (%) VCC = 24 V Pout = 60 W 905 920 935 950 60 57 965 860 875 890 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20167 Uen Rev. C 09-28-98 3 Efficiency (%) Gain (dB) |
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