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| e PTB 20166 23 Watts, 675-925 MHz Common Base RF Power Transistor Description The 20166 is an NPN, common base RF power transistor intended for 24-30 Vdc class C operation from 675 to 925 MHz. Rated at 23 watts minimum output power, it may be used for both CW and pulsed applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Specified at 28 Volt, 925 MHz Class C Characteristics 55% Min Collector Efficiency at 23 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 30 25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Output Power (Watts) 201 66 LOT COD E VCC = 28 V f = 925 MHz Input Power (Watts) Package 20209 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4 4 48 0.27 -40 to +150 3.6 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20166 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IC = 50 mA, RBE = 27 VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 500 mA Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 50 4 30 Typ -- -- -- 50 Max -- -- -- 100 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 28 Vdc, Pout = 23 W, f = 925 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 23 W, f = 925 MHz) Load Mismatch Tolerance (VCC = 28 Vdc, Pout = 23 W, f = 925 MHz --all phase angles at frequency of test) Symbol Gpe C Min 8 55 -- Typ 9 65 -- Max -- -- 5:1 Units dB % -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 28 Vdc, Pout = 23 W) Z Source Z Load Frequency MHz 675 700 725 750 775 800 825 850 875 900 925 R 7.4 7.2 7.0 6.9 6.6 6.4 6.1 5.7 5.3 4.9 4.5 Z Source jX -1.8 -1.4 -1.1 -0.79 -0.52 -0.26 0.01 0.29 0.62 1.0 1.4 2 R 6.6 7.2 7.5 7.6 7.6 7.5 7.2 6.9 6.6 6.2 5.9 Z Load jX 9.0 8.6 8.1 7.6 7.1 6.7 6.4 6.2 6.1 6.0 6.1 5/19/98 e Typical Performance Gain & Efficiency vs. Power Out 12 10 8 80 12 70 10 60 8 PTB 20166 Gain and Return Loss vs. Frequency (as measured in a broadband circuit) 0 -5 Gain (dB) 6 4 2 0 0 5 10 15 20 25 30 50 40 6 4 2 0 600 -15 -20 VCC = 28 V f = 925 MHz 30 20 VCC = 28 V Pin = 2 W 700 800 900 -25 -30 1000 Output Power (Watts) Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20166 Uen Rev. C 09-28-98 3 Return Loss (dB) -10 Efficiency (%) Gain (dB) |
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