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e PTB 20155 9 Watts, 610-960 MHz UHF Power Transistor Description The 20155 is an NPN common base RF power transistor intended for 28 Vdc class C operation from 610 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 9 Watts, 610-960 MHz Class C Characteristics Gold Metallization Silicon Nitride Passivated Typical Gain & Return Loss vs. Frequency 10 8 (as measured in a broadband circuit) Gain (dB) 0 -5 Gain (dB) 6 4 2 0 700 Return Loss (dB) VCC = 28 V Pin = 9 W Return Loss (dB) -10 -15 -20 -25 950 201 55 LOT COD E 750 800 850 900 Frequency (MHz) Package 20209 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 50 4 6.7 65 0.37 -40 to +150 2.7 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20155 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain Output Capacitance Collector Cut-off Current (100% Tested) e Conditions VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 300 mA VCB = 28 V, IE = 0 A, f = 1 MHz VCB = 28 V, IE = 0 A Symbol V(BR)CES V(BR)EBO hFE Cob ICBO Min 50 3.5 25 -- -- Typ -- -- -- 10.5 -- Max -- -- 100 11 1.5 Units Volts Volts -- pF mA RF Specifications (100% Tested) Characteristic Gain (VCC = 28 Vdc, Pout = 9 W, f = 960 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 9 W, f = 960 MHz) Symbol Gpe C Min 8.0 45 Typ 9.0 53 Max -- -- Units dB % Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 28 Vdc, Pout = 9 W) Z Source Z Load Frequency MHz 850 900 960 R 4.4 6.4 6.4 Z Source jX -10.7 -10.0 -14.3 R 8.6 9.3 7.8 Z Load jX 3.6 4.9 3.1 2 e Typical Performance Gain & Efficiency vs. Power Out 10 8 6 60 50 40 30 PTB 20155 4 2 0 0 2 4 6 8 10 VCC = 28 V f = 960 MHz 20 10 Output Power (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20155 Uen Rev. C 09-28-98 3 Efficiency (%) Gain (dB) |
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