NTE78 Silicon NPN Transistor RF Power Output
Description: The NTE78 is a silicon NPN epitaxial planer type transistor designed for use as 3 to 4 watt RF power amplifiers in HF band mobile radio applications. Features: D High Power Gain D Emitter Ballasted Construction for High Reliability and Good Performance Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector-Emitter Voltage (RBE = 10), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Dissipation (TA = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83C/W Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10C/W Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Output Power Collector Efficiency Symbol Test Conditions Min 5 75 75 - - 35 6.0 55 Typ - - - - - 70 7.5 60 Max - - - 100 100 180 - - W % Unit V V V A A V(BR)EBO IE = 1mA, IC = 0 V(BR)CBO IC = 1mA, IE = 0 V(BR)CER IC = 10mA, RBE = 10 ICBO IEBO hFE PO C VCB = 30V, IE = 0 VEB = 3V, IC = 0 VCE = 10V, IC = 100mA, Note 1 VCC = 12V, Pin = 250mW, f = 27MHz
Note 1. Pulse test: Pulse Width = 150s, Duty Cycle = 5%.
.420 (10.67) Max .110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54)
Emitter Collector/Tab
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