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| NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high-power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Minimum Gain = 10dB Efficiency = 40% D Intermodulation Distortion @ 100W (PEP): IMD = -30dB Min D 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Withstand Current (10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.66W/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0 V(BR)CES IC = 200mA, VBE = 0 Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CBO IC = 200mA, IE = 0 V(BR)EBO IE = 10mA, IC = 0 ICES VCE = 16V, VBE = 0, TC = +25C 20 45 45 3 - - - - - - - - - - 10 V V V V mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Tests Common-Emitter Amplifier Power Gain Collector Efficiency Intermodulation Distortion (Note 1) GPE IMD VCC = 12.5V, Pout = 100W, IC(max) = 10A, ICQ = 150mA, f = 30, 30.001MHz 10 40 - 12 - -33 - - -30 dB % dB Cob VCB = 12.5V, IE = 0, f = 1MHz - 650 800 pF hFE IC = 5A, VCE = 5V 10 30 - Symbol Test Conditions Min Typ Max Unit Note 1. To proposed EIA method of measurement. Reference peak envelope power. .725 (18.42) .127 (3.17) Dia (2 Holes) C E .250 (6.35) B .225 (5.72) E 1.061 (26.95) Ceramic Cap .480 (12.1) Dia .260 (6.6) .065 (1.68) .975 (24.77) .095 (2.42) |
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