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| NTE296 Silicon PNP Transistor General Purpose Amplifier Description: The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/C Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO IC = 1mA, IB = 0, Note 1 IC = 100A, IE = 0 IE = 10A, IC = 0 VCB = 200V, IE = 0 VBE = 3V, IC = 0 300 300 5 - - - - - - - - - - 0.2 0.1 V V V A A Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain hFE IC = 1mA, VCE = 10V IC = 10mA, VCE = 10V IC = 30mA, VCE = 10V Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristics Current Gain-Bandwidth Product Collector-Base Capacitance fT Ccb IC = 10mA, VCE = 20V, f = 10MHz VCB = 20V, IE = 0, f = 1MHz 45 - - - - 8 MHz pF VCE(sat) VBE(sat) IC = 30mA, IB = 3mA IC = 30mA, IB = 3mA 25 30 30 - - - - - - - - - - 0.75 0.9 V V Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .380 (9.56) C .500 (12.7) 1.200 (30.48) Ref .180 (4.57) .132 (3.35) Dia .325 (9.52) .300 (7.62) .070 (1.78) x 45 Chamf .050 (1.27) .400 (10.16) Min E B C .100 (2.54) .100 (2.54) |
Price & Availability of NTE296
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