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| Datasheet File OCR Text: |
| NTE295 Silicon NPN Transistor RF Power Output, Driver Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector-Emitter Voltage (RBE = 150), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Dissipation (TA = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Symbol ICBO IEBO Test Conditions VCB = 40V, IE = 0 VEB = 4V, IC = 0 Min - - 75 75 45 5 60 180 - - - 1.0 60 Typ - - - - - - - 250 0.2 0.9 15 1.8 - Max 1.0 1.0 - - - - 320 - 0.6 1.2 25 - - V V pF W % Unit A A V V V V V(BR)CBO IC = 10A, IE = 0 V(BR)CER IC = 1mA, RBE = 150 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 10A, IC = 0 hFE fT VCE(sat) VBE(sat) Cob PO VCE = 5V, IC = 500mA VCE = 10V, IC = 50mA IC = 500mA, IB = 50mA IC = 500mA, IB = 50mA VCB = 10V, f = 1MHz VCC = 12V, f = 27MHz, Pi = 35mW Emitter-Base Breakdown Voltage DC Current Gain Current Gain Bandwidth Product Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Output Power Collector Efficiency .330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B .090 (2.28) .130 (3.3) Max |
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