NTE293 (NPN) & NTE294 (PNP) Silicon Complementary Transistors Audio Amplifier and Driver
Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low-frequency power amplification and drive applications. Features: D Low Collector-Emitter Saturation Voltage Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain Symbol Test Conditions Min 60 50 5 - 120 50 - - - - Typ - - - - - 100 0.2 0.85 200 11 Max - - - 0.1 240 - 0.4 1.2 - 20 V V MHz pF Unit V V V A V(BR)CBO IC = 10A, IE = 0 V(BR)CEO IC = 2mA, IB = 0 V(BR)EBO IE = 10A, IC = 0 ICBO hFE VCE(sat) VBE(sat) fT Cob VCB = 20V, IE = 0 VCE = 10V, IC = 500mA, Note 2 VCE = 5V, IB = 1A, Note 2 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current-Gain Bandwidth Product Collector Output Capacitance IC = 500mA, IB = 50mA, Note 2 IC = 500mA, IB = 50mA, Note 2 VCB = 10V, IE = 50mA, f = 200MHz VCB = 10V, Ie = 0, f = 1MHz
Note 1. NTE293MP is a matched pair of NTE293 with their DC Current Gain (hFE) matched to within 10% of each other. Note 2. Pulse measurement.
.339 (8.62) Max Seating Plane
.512 (13.0) Min
.026 (.66) Dia Max
ECB .100 (2.54)
.200 (5.08) Max
.240 (6.09) Max
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