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| VTP Process Photodiodes VTP1188S PACKAGE DIMENSIONS inch (mm) CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .017 in2 (1.1 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Storage Temperature: Operating Temperature: -20C to 75C -20C to 75C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTP curves, page 46) VTP11188S SYMBOL ISC TC ISC ISC VOC TC VOC ID RSH TC RSH CJ range p SR CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Short Circuit Current Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Sensitivity @ Peak TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K 100 W/cm2, 880 nm H = 100 fc, 2850 K 2850 K H = 0, VR = 10 mV H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V =0 V 400 925 .55 13 .33 -2.0 3 67 -11 .18 .30 1100 30 Typ. 200 .20 25 Max. A %/C A mV mV/C nA G %/C nF nm nm A/W UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 51 |
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