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| VTP Process Photodiodes VTP100C PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is clear. These diodes exhibit low dark current and fast speed of response. CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40C to 100C -40C to 100C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTP curves, page 46) VTP100C SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 30 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 10 V H = 0, V = 10 mV H = 0, V = 3 V 940 nm @ Peak 400 925 140 70 9.0 x 10 -14 (Typ.) 3.0 x 10 12 (Typ.) .050 .55 1150 .25 50 50 Typ. 70 .20 350 -2.0 30 Max. A %/C mV mV/C nA G pF A/(W/cm2) A/W nm nm V Degrees W Hz cm Hz / W UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 48 |
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