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U/J/SST308 SERIES Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE ABSOLUTE MAXIMUM RATINGS1 @ 25 C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation (J/SST) Continuous Power Dissipation (U) Maximum Currents Gate Current (J/SST) Gate Current (U) Maximum Voltages Gate to Drain Gate to Source -25V -25V 10mA 20mA 350mW 500mW D S SINGLE N-CHANNEL HIGH FREQUENCY JFET Gpg = 11.5dB NF = 2.7dB TO-18 BOTTOM VIEW D 2 3 J SERIES TO-92 BOTTOM VIEW DSG G -55 to 150C -55 to 135C S 1 123 SST SERIES SOT-23 TOP VIEW 1 3 2 G COMMON ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated) SYMBOL BVGSS VGS(F) IG rDS(on) en NF Gpg gfg gog CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Forward Voltage Gate Operating Current Drain to Source On Resistance Equivalent Noise Voltage Noise Figure Power Gain 2 MIN -25 0.7 TYP MAX 1 UNIT V pA nV/Hz CONDITIONS IG = -1A, VDS = 0V IG = 10mA, VDS = 0V VDG = 9V, ID = 10mA VGS = 0V, ID = 1mA VDS = 10V, ID = 10mA, f = 100Hz -15 35 6 f = 105MHz f = 450MHz f = 105MHz f = 450MHz f = 105MHz f = 450MHz f = 105MHz f = 450MHz 1.5 2.7 16 11.5 14 13 0.16 0.55 dB VDS = 10V, ID = 10mA mS Forward Transconductance Output Conductance Linear Integrated Systems * 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 SPECIFIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated) SYM. VGS(off) IDSS Ciss Crss gfs gos CHARACTERISTIC Gate to Source Cutoff Voltage Source to Drain Saturation Current3 Input Capacitance Reverse Transfer Capacitance Forward Transconductance Output Conductance 4 1.9 14 110 8 250 TYP J/SST308 MIN -1 12 MAX -6.5 60 5 2.5 10 250 J/SST309 MIN -1 12 MAX -4 30 5 2.5 8 250 J/SST310 MIN -2 24 MAX -6.5 60 5 2.5 UNIT V mA pF mS S CONDITIONS VDS = 10V, ID = 1nA VDS = 10V, VGS = 0V VDS = 10V, VGS = -10V f = 1MHz VDS = 10V, ID = 10mA f = 1kHz SPECIFIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated) SYM. VGS(off) IDSS Ciss Crss gfs gos CHARACTERISTIC Gate to Source Cutoff Voltage Source to Drain Saturation Current3 Input Capacitance Reverse Transfer Capacitance Forward Transconductance Output Conductance 4 1.9 14 110 10 250 TYP U308 MIN -1 12 MAX -6.5 60 5 2.5 10 250 U309 MIN -1 12 MAX -4 30 5 2.5 10 250 U310 MIN -2.5 24 MAX -6.5 60 5 2.5 UNIT V mA pF mS S CONDITIONS VDS = 10V, ID = 1nA VDS = 10V, VGS = 0V VDS = 10V, VGS = -10V f = 1MHz VDS = 10V, ID = 10mA f = 1kHz TO-18 Three Lead 0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115 0.170 0.195 0.175 0.195 TO-92 0.130 0.155 0.045 0.060 SOT-23 0.89 1.03 1 1.78 2.05 0.37 0.51 LS XXX YYWW 3 2 2.80 3.04 3 LEADS 0.019 DIA. 0.016 0.100 0.500 MIN. 1.20 1.40 2.10 2.64 0.085 0.180 0.016 0.022 0.014 0.020 0.050 2 1 3 0.500 0.610 0.89 1.12 45 0.046 0.036 0.048 0.028 1 2 3 0.013 0.100 0.55 DIMENSIONS IN MILLIMETERS 0.095 0.105 0.045 0.055 DIMENSIONS IN INCHES. Absolute maximum ratings are limiting values above which serviceability may be impaired. Measured at optimum input noise match. 3. Pulse test: PW 300s, Duty Cycle 3% Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. 1. 2. Linear Integrated Systems * 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 |
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