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| TIC256 SERIES SILICON TRIACS Copyright (c) 1997, Power Innovations Limited, UK JULY 1991 - REVISED MARCH 1997 q q q q q q High Current Triacs 20 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage 150 A Peak Current Max IGT of 50 mA (Quadrants 1 - 3) Pin 2 is in electrical contact with the mounting base. MDC2ACA TO-220 PACKAGE (TOP VIEW) MT1 MT2 G 1 2 3 absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC256D Repetitive peak off-state voltage (see Note 1) TIC256M TIC256S TIC256N Full-cycle RMS on-state current at (or below) 60C case temperature (see Note 2) Peak on-state surge current full-sine-wave (see Note 3) Peak gate current Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) ITSM IGM TC Tstg TL VDRM SYMBOL VALUE 400 600 700 800 20 150 1 -40 to +110 -40 to +125 230 A A A C C C V UNIT NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60C derate linearly to 110C case temperature at the rate of 500 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER IDRM Repetitive peak off-state current Peak gate trigger current VD = Rated VDRM Vsupply = +12 V IGTM Vsupply = +12 V Vsupply = -12 V Vsupply = -12 V Vsupply = +12 V VGTM Peak gate trigger voltage Peak on-state voltage Holding current Vsupply = +12 V Vsupply = -12 V Vsupply = -12 V VTM IH ITM = 28.2 A Vsupply = +12 V Vsupply = -12 V TEST CONDITIONS IG = 0 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 IG = 50 mA IG = 0 IG = 0 TC = 110C tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s (see Note 4) Init' ITM = 100 mA Init' ITM = -100 mA 7 -15 -16 28 0.7 -0.7 -0.8 0.8 1.4 6 -13 2 -2 -2 2 1.7 40 -40 V mA V MIN TYP MAX 2 50 -50 -50 mA UNIT mA All voltages are with respect to Main Terminal 1. NOTE 4: This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIC256 SERIES SILICON TRIACS JULY 1991 - REVISED MARCH 1997 electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER IL dv/dt dv/dt(c) di/dt Latching current Critical rate of rise of off-state voltage Critical rise of commutation voltage Critical rate of rise of on -state current Vsupply = +12 V Vsupply = -12 V VD = Rated VD VD = Rated VD di/dt = 0.5 IT(RMS)/ms VD = Rated VD diG/dt = 50 mA/s IGT = 50 mA TEST CONDITIONS (see Note 5) IG = 0 TC = 110C TC = 80C IT = 1.4 IT(RMS) TC = 110C MIN TYP 20 -20 450 1 200 MAX UNIT mA V/s V/s A/s All voltages are with respect to Main Terminal 1. NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: RG = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.9 62.5 UNIT C/W C/W TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs CASE TEMPERATURE 1000 TC10AA GATE TRIGGER VOLTAGE vs CASE TEMPERATURE 0*1 TC10AB IGT - Gate Trigger Current - mA 100 VGT - Gate Trigger Voltage - V ALL QUADRANTS 0*01 10 1 Vsupply IGTM + + + + -40 -20 0 20 40 60 VAA = 12 V RL = 10 tp(g) = 20 s 80 100 120 VAA = 12 V RL = 10 tp(g) = 20 s 0*001 -60 0*1 -60 -40 -20 0 20 40 60 80 100 120 TC - Case Temperature - C TC - Case Temperature - C Figure 1. Figure 2. PRODUCT INFORMATION 2 TIC256 SERIES SILICON TRIACS JULY 1991 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS HOLDING CURRENT vs CASE TEMPERATURE 100 TC10AD GATE FORWARD VOLTAGE vs GATE FORWARD CURRENT 10 TC10AC VGF - Gate Forward Voltage - V IH - Holding Current - mA 10 1 MAX TYP MIN 1 Vsupply + 0*1 -60 -40 -20 0 20 VAA = 12 V IG = 0 Initiating ITM = 100 mA 40 60 80 100 120 0*1 IA = 0 TC = 25 C QUADRANT 1 0*01 0*001 0*01 0*1 1 10 TC - Case Temperature - C IGF - Gate Forward Current - A Figure 3. Figure 4. LATCHING CURRENT vs CASE TEMPERATURE 1000 TC10AE IL - Latching Current - mA 100 10 Vsupply IGTM + + 1 -60 -40 + + -20 0 20 40 VAA = 12 V 60 80 100 120 TC - Case Temperature - C Figure 5. PRODUCT INFORMATION 3 TIC256 SERIES SILICON TRIACS JULY 1991 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE PRODUCT INFORMATION 4 TIC256 SERIES SILICON TRIACS JULY 1991 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 5 |
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