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| STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP N-CHANNEL 60V - 0.015 - 50A TO-220/TO-220FP/IPAK/DPAK STripFETTM II POWER MOSFET TYPE STP55NF06 STB55NF06-1 STB55NF06 STP55NF06FP s s s s VDSS 60 V 60 V 60 V 60 V RDS(on) <0.018 <0.018 <0.018 <0.018 ID 50 A 50 A 50 A 50 A(*) TO-220FP 3 1 2 TO-220 1 3 2 s TYPICAL RDS(on) = 0.015 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") THROUGH-HOLE IPAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1") 3 IPAK TO-262 (Suffix "-1") 3 12 1 DPAK TO-263 (Suffix "T4") DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Ptot dv/dt (1) EAS (2) Tstg Tj to Rth value INTERNAL SCHEMATIC DIAGRAM Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value STP_B55NF06(-1) STP55NF06FP 60 60 20 50 50(*) 35 35(*) 200 200(*) 110 30 0.73 0.2 7 350 -55 to 175 Unit V V V A A A W W/C V/ns mJ C (*) Pulse width limited by safe operating area (*)Refer to soa for the max allowable current value on FP-type due March 2003 . (1) ISD 50A, di/dt 400A/s, VDD V (BR)DSS, T j T JMAX (2) Starting Tj = 25 oC, I D = 25A, VDD= 30V 1/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP THERMAL DATA IPAK DPAK TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec) Max Max 1.36 62.5 300 TO-220FP 5 C/W C/W C ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20 V Min. 60 1 10 100 Typ. Max. Unit V A A nA IGSS ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 27.5 A Min. 2 Typ. 3 0.015 Max. 4 0.018 Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 27.5 A Min. Typ. 18 1530 300 105 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 27.5 A VDD = 30 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD= 48 V ID= 55 A VGS= 10V Min. Typ. 16 8 44.5 10.5 17.5 60 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 27.5 A VDD = 30V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 36 15 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 55A VGS = 0 75 170 4.5 Test Conditions Min. Typ. Max. 50 200 1.5 Unit A A V ns nC A di/dt = 100A/s ISD = 55 A VDD = 30 V Tj = 150C (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area for Safe Operating Area for TO-220FP 3/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP Thermal Impedance Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature 5/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP D2PAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 0 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.015 8 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.028 0.045 0.018 0.048 0.352 0.315 0.409 inch. TYP. TYP. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 7/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 F1 D G1 E Dia. L5 L7 L6 L4 P011C L9 8/12 F2 F G H2 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP TO-262 (I2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10 13.1 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055 DIM. A C2 B2 B E L1 L2 D L P011P5/E e A1 C 9/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D H F G1 E F2 123 L2 L4 10/12 G STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 BASE QTY 1000 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.795 0.960 3.937 1.197 BULK QTY 1000 1.039 0.520 MIN. inch MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0075 1.574 .0.0098 0.933 0.0137 0.956 inch MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082 * on sales type 11/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 12/12 |
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