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| SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. KTK161 N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR B FEATURES Low Noise Figure. High Forward Transfer Admittance. :|yfs|= 9mS(Typ.). Extremely Low Reverse Transfer Capacitance. : Crss=0.1pF(Typ.) C H M F : NF=2.5dB(Typ.) (f=100MHz). A O E E MAXIMUM RATINGS (Ta=25 CHARACTERISTIC Gate-Drain Voltage Gate-Current Drain Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VGDO IG PD Tj Tstg RATING -18 10 400 150 -55 150 UNIT V mA mW 1 L 2 3 N DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 _ G 14.00+ 0.50 H 0.60 MAX J 1.05 K 1.45 L 25 M 0.80 N 0.55 MAX O 0.75 J 1. DRAIN 2. SOURCE 3. GATE K ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Gate Leakage Current Gate-Drain Breakdown Voltage Drain Current Gate-Source Cut-off Voltage Foward Transfer Admittance Reverse Transfer Capacitance Power Gain Noise Figure Note : IDSS Classification O:1.0 3.0, Y:2.5 IGSS ) TEST CONDITION VGS=-0.5V, VDS=0 IG=-100 A VDS=10V, VGS=0V VDS=10V, ID=1 A VDS=10V, VGS=0, f=1kHz VGD=-10V, f=1MHz VDD=10V, f=100MHz (Fig.) VDD=10V, f=100MHz (Fig.) GR:5.0 10.0, BL:9.0 15.0 MIN. -18 1.0 -0.4 TYP. 9.0 0.10 18 2.5 MAX. -10 15.0 -4.0 0.15 3.5 UNIT nA V mA V mS pF dB dB SYMBOL V(BR)GDO IDSS (Note) VGS(OFF) |yfs| Crss Gps NF 6.0, 1995. 1. 24 Revision No : 0 D G TO-92M 1/3 KTK161 Fig. 100MHz GPS, NF TEST CIRCUIT INPUT R g =50 10pF 20pF L1 RS G 0.005F D S 10pF OUTPUT RL=50 20pF L2 0.005F VDD L1 : 0.8mm Ag PLATED Cu WIRE , 3 TURNS , 10mm ID , 10mm LENGTH. L1 : 0.8mm Ag PLATED Cu WIRE , 3.5 TURNS , 10mm ID , 10mm LENGTH. KTK161 is measured at each group by changing RS. Group KTK161-O KTK161-Y KTK161-GR KTK161-BL 18 100 200 RS( ) 0 5% 5% 5% 1995. 1. 24 Revision No : 0 2/3 KTK161 y is , y os - f FORWARD REVERSE TRANSFER ADMITTANCE yfs , y rs (mS) INPUT,OUTPUT ADMITTANCE y is , y os (mS) 50 30 10 5 3 1 0.5 0.3 0.1 10 30 100 300 1k b is b os COMMON SOURCE VDS =10V VGS =0 Ta=25 C y fs , yrs - f 30 10 5 3 1 0.5 0.3 0.1 10 30 100 300 1k 3k 5k FREQUENCY f (MHz) g fs COMMON SOURCE VDS =10V VGS =0 Ta=25 C b fs g is g os b rs g rs 3k 10k FREQUENCY f (MHz) y is - V DS OUTPUT ADMITTANCE yos (mS) 10 INPUT ADMITTANCE y is (mS) 5 3 b is I DS =5mA(I DSS) 2 0.5 COMMON SOURCE f=100MHz Ta=25 C y os - VDS 10 5 3 1 0.5 0.3 0.1 0.05 0.02 4 6 8 10 12 14 16 18 20 22 g os b os I DS =5mA(I DSS ) 2 0.5 COMMON SOURCE f=100MHz Ta=25 C 1 0.5 0.3 g is I DS =5mA(I DSS ) 2 0.5 I DS =5mA(I DSS ) 2 0.5 0.1 4 6 8 10 12 14 16 18 20 22 DRAIN-SOURCE VOLTAGE V DS (V) DRAIN-SOURCE VOLTAGE V DS (V) y fs - V DS FORWARD TRANSFER ADMITTANCE y fs (mS) 30 COMMON SOURCE f=100MHz Ta=25 C 10 5 3 g fs (I DSS ) I DS =5mA 2 0.5 -b fs (I DSS) I DS =5mA 2 1 0.5 4 6 8 10 12 0.5 14 16 DRAIN-SOURCE VOLTAGE V DS (V) 1995. 1. 24 Revision No : 0 3/3 |
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