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| BTX18-100/BTX18-200/BTX18-300 BTX18-400/BTX18-500 SILICON THYRISTORS The BTX18 series is a range of p-gate reverse blocking thyristors, in a TO-39 metal enveloppe, intended for use in general low power applications up to a A average on-state current. RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Anode to Cathode - Ratings Voltage 1) BTX18- BTX18- BTX18- BTX18- BTX18100 200 300 400 500 Symbol VR VRWM VRRM VRSM VDWM VD VDRM VDSM Currents Ratings Continuous Reverse Voltage Crest Working Reverse Voltage Repetitive Peak Reverse Voltage ( = 0.01 ; f=50Hz) Non-repetitive peak reverse voltage (t<10ms) Crest Working off-state Voltage Continuous off-state Voltage Repetitive peak off-state voltage ( = 0.01 ; f=50Hz) Non-repetitive peak off-state voltage (t<10ms) 100 100 120 120 100 100 120 120 200 200 240 240 200 200 240 240 300 300 350 350 300 300 350 350 400 400 500 500 400 400 500 500 500 500 600 600 500 500 600 600 V V V V V V V) V) Symbol IT(AV) IT IT(RMS) Ratings Average on-state current TCASE=105C (averaged over any 20 TAMB=60C, in ms period) free air On-state Current (D.C.) TCASE=100C RMS on-state Current BTX18- BTX18- BTX18- BTX18- BTX18100 200 300 400 500 Max : 1.0 Max : 250 Max : 1.6 Max : 1.6 1/4 A mA A A COMSET SEMICONDUCTORS BTX18-100/BTX18-200/BTX18-300 BTX18-400/BTX18-500 Symbol ITRM ITSM Ratings Repetitive Peak on-state Current Non-repetitive peak on-state current t=10ms ; TJ=125C prior to surge Junction Temperature Storage Temperature BTX18- BTX18- BTX18- BTX18- BTX18100 200 300 400 500 Max : 10 10 A Max : 125C -55 to +125C A V C TJ Tstg 1) These ratings apply for zero or negative bias on the gate with respect to the cathode, and when a resistor R<1 k is connected between gate and cathode 2) The device is not suitable for operation in the forward breakover mode. Gate to Cathode - Ratings With 1 resistor between gate and cathode Symbol VFGM VRGM IFGM PG(AV) PGM Ratings Forward Peak Voltage Reverse Peak Voltage Forward Peak Current Average Power Dissipation (averaged over any 20 ms period) Peak Power Dissipation BTX18 BTX18 BTX18 BTX18 BTX18 -100 -200 -300 -400 -500 Max : 10 V Max : 5 V Max : 0.2 Max : 0.05 Max : 0.5 V V A W W Temperatures Symbol Rth j-c Rth j-a Zth j-c Ratings From Junction to Case From Junction to Ambient Transient Thermal Resistance (t=10 ms) BTX18 BTX18 BTX18 BTX18 BTX18 -100 -200 -300 -400 -500 10 200 2.5 C/W C/W C/W Anode to Cathode - Characteristics Symbol VT On State Voltage IT=1.0 A, Tj=25C Ratings < BTX18 BTX18 BTX18 BTX18 BTX18 -100 -200 -300 -400 -500 1.5 1.5 1.5 1.5 1.5 V) 1 COMSET SEMICONDUCTORS 2/4 BTX18-100/BTX18-200/BTX18-300 BTX18-400/BTX18-500 Symbol IRM IDM IL IH Ratings Peak Reverse Current VRM=VRWmax ; Tj=125C Peak off-state Current VDM=VDWmax ; Tj=125C Latching current, Tj=125C Holding Current ; Tj=25C < < < BTX18 BTX18 BTX18 BTX18 BTX18 -100 -200 -300 -400 -500 800 800 400 400 275 275 Typ : 10 5.0 ) 200 200 160 160 A A mA mA Gate to Cathode - Characteristics Symbol VGT VGD IGT Ratings Voltage that will trigger all devices Tj=25C Voltage that will not trigger any device Tj=125C Current that vill trigger all devices Tj=25C > < > BTX18 BTX18 BTX18 BTX18 BTX18 -100 -200 -300 -400 -500 2.0 200 5.0 V mV mA Switching Characteristics Symbol Ratings Tj=25C tq Tj=125C < 800 400 Typ : 35 275 200 160 s BTX18 BTX18 BTX18 BTX18 BTX18 -100 -200 -300 -400 -500 Turn off time when switched from IT=300 mA to IR=175 mA Type : 20 s IDM Peak off-state Current VDM=VDWmax ; Tj=125C 1) VT is measured along the leads at 1 cm from the case 2) Measurer under the following conditiond : Anode sypply voltage= +6.0V Initial on-state current after gate triggering= 50mA The current is reduced until the device turns of. COMSET SEMICONDUCTORS 3/4 BTX18-100/BTX18-200/BTX18-300 BTX18-400/BTX18-500 MECHANICAL DATA CASE TO-39 DIMENSIONS A B C D E F G H L Pin 1 : Pin 2 : Pin 3 : mm inches 6,71 0,26 13,2 0,51 9,23 0,36 8,34 0,32 0,8 0,03 0,8 0,03 0,42 0,016 45 4,97 0,2 Kathode Gate Anode COMSET SEMICONDUCTORS 4/4 |
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