 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| VN2010L/BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN2010L BS107 200 V(BR)DSS Min (V) rDS(on) Max (W) 10 @ VGS = 4.5 V 28 @ VGS = 2.8 V VGS(th) (V) 0.8 to 1.8 0.8 to 3 ID (A) 0.19 0.12 D D D D D Low On-Resistance: 6 W Secondary Breakdown Free: 220 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature "Run-Away" D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control TO-226AA (TO-92) S 1 Device Marking Front View "S" VN 2010L xxyy "S" = Siliconix Logo xxyy = Date Code TO-92-18RM (TO-18 Lead Form) D 1 Device Marking Front View "S" BS 107 xxyy "S" = Siliconix Logo xxyy = Date Code G 2 G 2 D 3 S 3 Top View VN2010L Top View BS107 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) _ Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70215 S-04279--Rev. C, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg VN2010L 200 "30 0.19 0.12 0.8 0.8 0.32 156 -55 to 150 BS107 200 "25 0.12 Unit V A 0.5 W 250 _C/W _C 11-1 VN2010L/BS107 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VN2010L Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Drain Leakage Current V(BR)DSS VGS(th) IGSS IDSV VGS = 0 V, ID = 100 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "20 V VDS = 0 V, VGS = "15 V VDS = 70 V, VGS = 0.2 V VDS = 130 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 160 V, VGS = 0 V TJ = 125_C On-State Drain Currentb ID(on) VDS = 10 V, VGS = 10 V VGS = 2.8 V, ID = 0.02 A Drain-Source On-Resistanceb rDS(on) VGS = 4.5 V, ID = 0.05 A TJ = 125_C Forward Transconductanceb Common Source Output Conductanceb gfs gos VDS = 15 V, ID = 0.1 A VDS = 15 V, ID = 0.05 A 0.7 6 6 11 180 0.15 125 mS 10 20 0.1 28 W 1 100 A 220 1.2 200 0.8 1.8 "10 "10 1 0.03 mA m nA 200 0.8 3 V BS107 Min Max Unit Symbol Test Conditions Typa Min Max Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS =25 V, VGS = 0 V, f = 1 MHz 35 9 1 60 30 15 pF Switchingc Turn-On Time Turn-Off Time tON tOFF VDD = 25 V, RL = 250 W ID ^ 0.1 A, VGEN = 10 V RG = 25 W 5 21 20 ns 30 VNDQ20 Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70215 S-04279--Rev. C, 16-Jul-01 VN2010L/BS107 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 0.5 VGS = 10 V 50 5V 4V 6V 0.3 3V 0.2 ID - Drain Current (mA) 40 VGS = 2.2 V 2.0 V Output Characteristics for Low Gate Drive 0.4 ID - Drain Current (A) 30 1.8 V 20 1.6 V 1.4 V 0.1 2V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 10 1.2 V 1.0 V 0.6 V 0 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) Transfer Characteristics 500 VDS = 15 V 400 ID - Drain Current (mA) 125_C 300 TJ = -55_C 25_C 24 rDS(on) - On-Resistance ( ) 20 28 On-Resistance vs. Gate-to-Source Voltage I D = 500 mA 16 12 8 4 50 mA 250 mA 200 100 0 0 1 2 3 4 5 VGS - Gate-Source Voltage (V) 0 0 4 8 12 16 20 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 12.5 rDS(on) - Drain-Source On-Resistance ( ) rDS(on) - Drain-Source On-Resistance ( ) (Normalized) 2.25 2.00 1.75 Normalized On-Resistance vs. Junction Temperature VGS = 4.5 V 10.0 VGS = 10 V 7.5 ID = 50 mA 10 mA 1.50 1.25 1.00 0.75 0.50 5.0 2.5 0 0 0.2 0.4 0.6 0.8 1.0 -50 -10 30 70 110 150 ID - Drain Current (A) TJ - Junction Temperature (_C) Document Number: 70215 S-04279--Rev. C, 16-Jul-01 www.vishay.com 11-3 VN2010L/BS107 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region 10 VDS = 5 V 50 TJ = 150_C ID - Drain Current (mA) C - Capacitance (pF) 1 40 C iss 60 VGS = 0 V f = 1 MHz Capacitance 30 C oss 20 25_C 0.1 10 -55_C 0.01 0 0.4 0.8 1.2 1.6 2.0 0 0 C rss 10 20 30 40 50 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Gate Charge 15.0 100 50 Load Condition Effects on Switching VDD = 25 V RG = 25 W VGS = 0 to 10 V VGS - Gate-to-Source Voltage (V) 12.5 I D = 0.1 A 10.0 VDS = 100 V 20 160 V 10 5 td(off) tr 7.5 5.0 2.5 2 1 0 250 500 750 1000 1250 0.01 0.1 ID - Drain Current (A) td(on) tf 0 Qg - Total Gate Charge (pC) 1.0 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.01 Single Pulse 0.01 0.1 1 10 100 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 1K 10 K t1 - Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70215 S-04279--Rev. C, 16-Jul-01 |
Price & Availability of VN2010L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |