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SEMICONDUCTOR
TECHNICAL DATA
TV TUNING. FEATURES
High Capacitance Ratio : C2V/C25V=6.5(Typ.) Low Series Resistance : rS=0.4Y (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.
KDV214
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
B 1
G
K
A
H
E
2 D
J C I
MAXIMUM RATING (Ta=25... )
CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR VRM Tj Tstg RATING 30 35 (RL=10kY ) 125 -55125 UNIT V V ... ...
M M
DIM A B C D E F G H I J K L M
MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6
1. ANODE 2. CATHODE
USC
ELECTRICAL CHARACTERISTICS (Ta=25... )
CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Capacitance Ratio Series Resistance SYMBOL VR IR C2V C25V C2V/C25V rS VR=5V, f=470MHz IR=1*IA VR=28V VR=2V, f=1MHz VR=25V, f=1MHz TEST CONDITION MIN. 30 14.16 2.11 5.90 TYP. 6.50 0.4 MAX. 10 16.25 2.43 7.15 0.55 UNIT V nA pF pF Y
Note : Available in matched group for capacitance to 2.5%. C(Max.)-C(Min.) Z0.025 C(Min.) (VR=2~25V)
Marking
Type Name
UO
2002. 6. 14
Revision No : 2
F
L
1/2
KDV214
C V - VR
100 CAPACITANCE CV (pF) 50 30 SERIES RESISTANCE r S ()
f=1MHz Ta=25 C
r s - VR
0.8
f=50MHz Ta=25 C
0.6
10 5 3
0.4
0.2
1
0
4
8
12
16
20
24
28
0
1
3
5
10
30
REVERSE VOLTAGE V R (V)
REVERSE VOLTAGE V R (V)
rS - f
C (%) 0.8 SERIES RESISTNACE rS ()
VR=5V Ta=25 C
C - Ta
3
f=1MHz
CAPACITANCE CHANGE RATIO
0.6
2 1 0 -1 -2 -40
VR=2V 14 20 25
0.4
0.2
0 50 100 300 FREQUENCY f (MHz) 500 1K
-20
0
20
40
60
80
AMBIENT TEMPERATURE Ta ( C) C(Ta)-C(25) C(25)
NOTE :
C=
x 100
2002. 6. 14
Revision No : 2
2/2

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