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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11F
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. MAX. 850 400 5 10 20 1.5 3 800 UNIT V V A A W V A ns
Ths 25 C
[INCLUDE] LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 850 450 5 10 2 4 20 150 150 UNIT V V A A A A W C C
Ths 25 C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.95 UNIT K/W K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65% ; clean and dustfree MIN. TYP. MAX. 1500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
12
-
pF
August 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11F
STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
1
CONDITIONS
MIN. 450 10 10
TYP. 18 20
MAX. 1.0 2.0 10 1.5 1.3 35 35
UNIT mA mA mA V V V
VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C Emitter cut-off current VEB = 9 V; IC = 0 A Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 3.0 A; IB = 0.6 A Base-emitter saturation voltage IC = 3.0 A; IB = 0.6 A DC current gain IC = 5 mA; VCE = 5 V IC = 500 mA; VCE = 5 V
DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL ton ts tf PARAMETER Switching times (resistive load) Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICon = 2.5 A; IBon = -IBoff = 0.5 A TYP. MAX. 1 4 0.8 UNIT s s s s ns s ns
ICon = 2.5 A; IBon = 0.5 A; LB = 1 H; -VBB = 5 V ICon = 2.5 A; IBon = 0.5 A; LB = 1 H; -VBB = 5 V; Tj = 100 C
1.1 80
1.4 150
1.2 140
1.5 300
IC / mA
+ 50v 100-200R
250
Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R
200
100
0 VCE / V
min VCEOsust
Fig.1. Test circuit for VCEOsust.
Fig.2. Oscilloscope display for VCEOsust.
1 Measured with half sine-wave voltage (curve tracer).
August 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11F
VCC
ICon 90 % IC
RL VIM 0 tp
IB
RB T.U.T.
ts toff IBon
10 % tf t
T
-IBoff
t
Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements.
Fig.6. Switching times waveforms with inductive load.
90 %
ICon
90 %
120 110 100 90
%
Normalised Derating
with heatsink compound
IC 10 % ts ton toff IBon 10 % tr 30ns -IBoff tf
80 70 60 50 40 30 20 10 0 0 20 40 60 80 Ths / C 100 120 140
P tot
IB
Fig.4. Switching times waveforms with resistive load.
Fig.7. Normalised power derating and second breakdown curves.
VCC
6 5 4
IC / A
BUT11AX
LC
3
IBon
LB T.U.T.
2 1 0 0 400 VCE / V 800 1200
-VBB
Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH
Fig.8. Reverse bias safe operating area. Tj Tj max
August 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11F
100
h FE
BUT11AX
100
IC / A
5V 10 1V
ICM max 10 IC max
= 0.01
tp = 10 us
II
(1) 100 us
1 0.01
1
0.1 1 IC / A 10 100
1 ms 10 ms
Fig.9. Typical DC current gain. hFE = f(IC); parameter VCE
0.1
I
(2) 500 ms DC
III
0.01 1 10 100 VCE / V 1000
Fig.10. Forward bias safe operating area. Ths 25 C (1) (2) I II III NB: Ptot max and Ptot peak max lines. Second breakdown limits. Region of permissible DC operation. Extension for repetitive pulse operation. Extension during turn-on in single transistor converters provided that RBE 100 and tp 0.6 s. Mounted with heatsink compound and 30 5 newton force on the centre of the envelope.
August 1997
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11F
Fig.11. Typical base-emitter and collector-emitter saturation voltages. VBEsat = f(IC); VCEsat = f(IC); IC/IB = 5
Fig.12. Collector-emitter saturation voltage. Solid lines = typ values, dotted lines = max values. VCEsat = f(IB); parameter IC
August 1997
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11F
Fig.13. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC
Fig.14. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
August 1997
6
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11F
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
10.2 max 5.7 max 3.2 3.0
0.9 0.5
4.4 max 2.9 max 4.4 4.0
7.9 7.5 17 max
seating plane
3.5 max not tinned
4.4
13.5 min 1 0.4 M 2 3 0.9 0.7 2.54 5.08 top view 1.3
0.55 max
Fig.15. SOT186; The seating plane is electrically isolated from all terminals.
Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for F-pack envelopes. 3. Epoxy meets UL94 V0 at 1/8".
August 1997
7
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11F
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1997
8
Rev 1.000

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