View BUT11AF_58934.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUT11AF/D
Full Pak High Voltage NPN Power Transistor
For Isolated Package Applications
The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to provide excellent switching, high voltage capability and low saturation voltage. * * * * * * * 1000 Volt VCES Rating Low Base Drive Requirements Isolated Overmold Package Improved System Efficiency No Isolating Washers Required Reduced System Cost High Isolation Voltage Capability (4500 VRMS)
BUT11AF
POWER TRANSISTOR 5.0 AMPERES 450 VOLTS 40 WATTS
CASE 221D-02 TO-220 TYPE
MAXIMUM RATINGS
Rating Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage RMS Isolation Voltage (For 1 sec, TA = 25C, Rel. Humidity < 30%) Per Figure 7 Per Figure 8 Per Figure 9 Collector Current -- Continuous Collector Current -- Pulsed (1) Base Current -- Continuous Base Current -- Pulsed (1) Total Power Dissipation @ TC = 25C* Derated above 25C Operating and Storage Temperature Range Symbol VCEO(sus) VCES VEBO VISOL1 VISOL2 VISOL3 IC ICM IB IBM PD TJ, Tstg Value 450 1000 9.0 4500 3500 2500 5.0 10 2.0 4.0 40 0.32 - 65 to +150 Adc Adc Watts W/C C V Unit Vdc Vdc Vdc
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction to Case* Maximum Lead Temperature for soldering purposes 1/8 from case for 5 sec. (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. * Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink, thermal grease applied, and a mounting torque of 6 to 8 in . lbs.
Full Pak is a registered trademark of Motorola Inc.
RJC TL
3.125 260
C/W C
REV 2
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
1
BUT11AF
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage (Figures 1 & 2) (IC = 100 mAdc, IB = 0, L = 25 H) Collector Cutoff Current (VCE = 1000 Vdc, VBE = 0) (VCE = 1000 Vdc, VBE = 0, TJ = 125C) Emitter-Base Leakage (VEB = 9.0 Vdc, IC = 0) ON CHARACTERISTICS (1) Collector-Emitter Saturation Voltage (IC = 2.5 Adc, IB = 0.5 Adc) Base-Emitter Saturation Voltage (IC = 2.5 Adc, IB = 0.5 Adc) DC Current Gain (IC = 5.0 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Insulation Capacitance (Collector to External Heatsink) SWITCHING CHARACTERISTICS Inductive Load (Figures 3 & 4) Storage Fall Time Storage Fall Time Resistive Load (Figures 5 & 6) Turn-On Time Storage Time Fall Time (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. IC = 2.5 Adc, IB1 = IB2 = 0.5 Adc ton ts tf - - - - - - 1000 4000 800 ns IC = 2.5 Adc, IB1 = 0.5 Adc TJ = 100C TJ = 25C ts tfi ts tfi - - - - 1100 80 1200 140 1400 150 1500 300 ns Cc-hs - 15 - pF VCE(sat) VBE(sat) hFE - - 10 - - - - 1.5 1.5 - - Vdc Vdc - VCEO(sus) ICES - - IEBO - - - - 1.0 2.0 10 mAdc 450 - - Vdc mAdc Symbol Min Typ Max Unit
+50 V 250 200 IC (mA) 100 VIN 0 tp 0 MIN VCEO(sus) VCE (V) T HOR. OSCILLOSCOPE 1 L VERT. OSCILLOSCOPE 100 - 200
Figure 1. Oscilloscope Display for Sustaining Voltage
Figure 2. Test Circuit for VCEO(sus)
2
Motorola Bipolar Power Transistor Device Data
BUT11AF
tr VCC 90% IB 10% RL VIN 0 tp T VCC = 250 V VIN = - 6 to +8 V tp = 20 s tp = 0.01 T RB 90% T.U.T. IC 10% td ton ts toff tf t t IB off IC on IB on
Figure 3. Test Circuit Resistive Load
Figure 4. Switching Times Waveforms with Resistive Load
VCC
tr 90% IB1
LC VCL +IB1 -VBE LB T.U.T.
IB 10% t IB2 90% IC 10% tf ts toff IC on
7Z89211.2 VCL = 300 V VCC = 30 V VEB = 5 V LB = 1 H VCL = 200 H
Figure 5. Test Circuit Inductive Load
Figure 6. Switching Times Waveforms with Inductive Load
Motorola Bipolar Power Transistor Device Data
3
BUT11AF
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS
CLIP
CLIP
0.107 MIN
0.107 MIN
HEATSINK 0.110 MIN Figure 7. Screw or Clip Mounting Position for Isolation Test Number 1
HEATSINK
HEATSINK
Figure 8. Clip Mounting Position for Isolation Test Number 2
Figure 9. Screw Mounting Position for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together.
MOUNTING INFORMATION
4-40 SCREW PLAIN WASHER
CLIP
HEATSINK COMPRESSION WASHER NUT HEATSINK
Figure 10. Typical Mounting Techniques for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.
4
Motorola Bipolar Power Transistor Device Data
BUT11AF
PACKAGE DIMENSIONS
-T- F Q A
123
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78
-B-
C S U
H K -Y-
G N L D
3 PL M
J R
0.25 (0.010)
B
M
Y
STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER
CASE 221D-02 TO-220 TYPE ISSUE D
Motorola Bipolar Power Transistor Device Data
5
BUT11AF
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
6
Motorola Bipolar Power Transistor Device Data
*BUT11AF/D*
BUT11AF/D

▲Up To Search▲

Price & Availability of BUT11AF

	To Download BUT11AF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .