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Ordering number:EN5579A
N-Channel Silicon MOSFET
FW211
DC-DC Converter Applications
Features
* Low ON resistance. * 2.5V drive.
Package Dimensions
unit:mm 2129
[FW211]
8 5
0.3 4.4 6.0
0.2
5.0
0.595
1.27
0.43
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg
PW10s, duty cycle1% Mounted on a ceramic board (1000mm2x0.8mm) 1unit Mounted on a ceramic board (1000mm2x0.8mm)
0.1
1.5
1.8max
1
4
1:Source 1 2:Gate 1 3:Source 2 4:Gate 2 5:Drain 2 6:Drain 2 7:Drain 1 8:Drain 1 SANYO:SOP8
Conditions
Ratings 20 10 6 52 1.7 2.0 150 -55 to +150
Unit V V A A W W
C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=5A, VGS=0 VDS=10V, VGS=10V, ID=1A ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit 0.4 9 15 27 35 750 520 300 20 200 150 150 30 5 7 1.0 1.2 35 48 Conditions Ratings min 20 100 10 1.3 typ max Unit V A A V S m m pF pF pF ns ns ns ns nC nC nC V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61598TS (KOTO) TA-0861 No.5579-1/3
FW211
Switching Time Test Circuit
4V 0V VIN VIN PW=10s D.C.1% VDD=10V ID=5A RL=2
D
VOUT
G
FW211 P.G 50
S
8
I D - VDS
6V 4 3V 2.5 V V 2V
8V
10 9 8
I D - VGS
VDS =10V
7
Drain Current, ID - A
Drain Current, ID - A
6 5 4 3 2 1
1.5V
7 6 5
25C
0.4 0.6 0.8 1.0 1.2 1.4
4 3 2
VGS=1V
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
1 0 0 0.2 1.6 1.8
Drain-to-Source Voltage,VDS - V
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Gate-to-Source Voltage, VGS - V
VDS=10V
60
| yfs | - I D
Static Drain-to-Source ON-State Resistance, RDS (on) - m
R DS(on) - VGS
Tc=25C
Forward Transfer Admittance, | yfs | - S
50
Ta
=-
2
5C
C 25
ID=5A
40
75
C
2A
30
20
10
0 0
1
2
3
4
5
6
7
8
Ta =
9
- 25
C
10 0.9 1.0
Drain Current, ID - A
80
Gate-to-Source Voltage, VGS - V
10 7 VGS=0 5
R DS(on) - Tc
I F - VSD
Static Drain-to-Source ON-State Resistance, RDS (on) - m
70 60 50 40
Forward Current, IF - A
3 2 1.0 7 5 3 2
ID =2A
30 20 10 0 -60
,VGS =
2.5V
3 2 -40 -20 0 20 40 60 80 100 120 140 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Case Temperature, Tc - C
Diode Forward Voltage, VSD - V
- 25C
Ta =7
ID =5A,VG
25C
S =4V
0.1 7 5
5C
75C
No.5579-2/3
FW211
10000 7 5
Ciss,Coss,Crss - VDS
f=1MHz
10
VGS - Qg
Gate-to-Source Voltage, VGS - V
VDS=10V 9 ID =1A
8 7 6 5 4 3 2 1
Ciss,Coss,Crss - pF
3 2 1000 7 5 3 2 100 0
Ciss
Coss
Crss
2
4
6
8
10
12
14
16
18
20
0 0
5
10
15
20
25
30
Drain-to-Source Voltage,VDS - V
1000 7
Total Gate Charge, Qg - nC
VDD =10V VGS=4V
100 7 I DP = 5 2 A 5 3 2
SW Time - I D
Switching Time, SW Time - ns
5 3 2 100 7 5 3 2 10 7 0.1
Drain Current, ID - A
tf
td
(of
f)
10 I =6A 7D 5 3 2
,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,,
DC
1pulse
ASO
10 s 10 0 s 1m s
tr
10m
s
10
0m
s
1.0 Operation in this 7 area is limited 5 by RDS(on). 3 2 Ta= 25C
op
era
tio
n
t d(on)
2
3
5
7 1.0
2
3
5
7 10
2
0.1 1unit 7 Mounted ceramic board (1000mm2 x 0.8mm) 5 2 3 5 7 10 2 3 5 7 1.0
2
3
Drain Current, ID - A
Drain-to-Source Voltage, VDS - V
2.5
Allowable Power Disipation, PD (FET2) - W
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2
P D (FET2) - P D (FET1)
Allowable Power Disipation, PD - W
PD -
Ta
M
ou
2.0
1.7
nte
d
ce
ram
ic
bo
1.5
ard
To
1u
(1
tal
00
0m
Di
ss
m2 x0
ip
1.0
.8m
nit
ati
on
m)
0.5
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 0
Mounted ceramic board (1000mm2 x 0.8mm)
20 40 60 80 100 120 140 160
Allowable Power Disipation, PD (FET 1) - W
Ambient Temperature, Ta - C
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 1998. Specifications and information herein are subject to change without notice.
PS No.5579-3/3

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