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| BUZ 104L SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * Logic Level * dv/dt rated * Low on-resistance * 175 C operating temperature * also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 104L VDS 50 V ID 17.5 A RDS(on) 0.1 Package TO-220 AB Ordering Code C67078-S1358-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 17.5 Unit A ID IDpuls 70 TC = 29 C Pulsed drain current TC = 25 C Avalanche energy, single pulse EAS 35 dv/dt 6 mJ ID = 17.5 A, VDD = 25 V, RGS = 25 L = 114 H, Tj = 25 C Reverse diode dv/dt kV/s IS = 17.5 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation VGS Vgs Ptot 14 20 V W TC = 25 C 60 Semiconductor Group 1 07/96 BUZ 104L Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 2.5 75 E 55 / 175 / 56 K/W Unit C Tj Tstg RthJC RthJA Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.6 0.1 1 10 10 0.085 2 1 100 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = -40 C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS A nA A nA 0.1 VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = -40 C VDS = 50 V, VGS = 0 V, Tj = 150 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 5 V, ID = 8.5 A Semiconductor Group 2 07/96 BUZ 104L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 5 9.2 420 140 60 - S pF 560 210 90 ns 12 18 VDS 2 * ID * RDS(on)max, ID = 8.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Rise time tr 50 75 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 70 95 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Fall time tf 50 65 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 104L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.15 55 25 17.5 70 V 1.8 ns nC Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 35 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 104L Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 5 V 18 A 65 W 55 Ptot 50 45 40 35 30 25 ID 14 12 10 8 6 20 15 10 2 5 0 0 0 20 40 60 80 100 120 140 C 180 0 20 40 60 80 100 120 140 C 180 4 TC TC Safe operating area ID = (VDS) parameter: D = 0, TC = 25C 10 2 t = 20.0s p Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W R DS (o n) =V DS /I D ID A 100 s ZthJC 10 0 10 1 1 ms 10 -1 D = 0.50 0.20 0.10 10 ms 10 -2 single pulse 0.05 0.02 0.01 10 0 0 10 DC 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 104L Typ. output characteristics ID = (VDS) parameter: tp = 80 s 40 A Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 8.5 A, VGS = 5 V 0.28 Ptot = 60W l kj iV GS [V] 0.24 a 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 ID 32 28 24 20 16 e g hb c d e f RDS (on)0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 fg h i j k 98% typ 12 8 c dl 4 0 0.0 b a 0.04 0.02 0.00 -60 1.0 2.0 3.0 4.0 5.0 6.0 V 7.5 VDS -20 20 60 100 C 180 Tj Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 40 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 10 S A ID gfs 30 8 7 6 5 4 25 20 15 3 10 2 1 0 1 2 3 4 5 6 7 8 V 10 VGS 0 5 10 15 20 25 A ID 35 5 0 0 Semiconductor Group 6 07/96 BUZ 104L Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.32 a b c d e f g Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 RDS (on) 0.24 VGS(th) 3.6 3.2 0.20 2.8 2.4 0.16 98% 2.0 0.12 1.6 h i j typ 2% 1.2 0.8 0.08 0.04 VGS [V] = a 2.5 2.0 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i j 7.0 8.0 10.0 0.4 0.0 -60 -20 20 60 100 C 180 0.00 0 4 8 12 16 20 24 28 32 A 38 ID Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 pF A C 10 3 IF 10 1 Ciss 10 2 Coss Crss 10 0 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 1 0 5 10 15 20 25 30 V 40 VDS 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 104L Avalanche energy EAS = (Tj ) parameter: ID = 17.5 A, VDD = 25 V RGS = 25 , L = 114 H 36 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 26 A 16 V EAS 28 24 VGS 12 10 20 8 16 12 8 4 0 20 6 0,2 VDS max 0,8 VDS max 4 2 0 40 60 80 100 120 140 C 180 Tj 0 4 8 12 16 nC 24 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 62 V 60 V(BR)DSS 59 58 57 56 55 54 53 52 51 50 49 48 47 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 07/96 BUZ 104L Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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